Abstract: A semiconductor device may include a first pattern including any one of a selector layer or a variable resistance layer and a middle electrode layer disposed over any one of the selector layer or the variable resistance layer; and a second pattern disposed over the first pattern and including the other one of the selector layer or the variable resistance layer, wherein a width of the second pattern may be the same as or greater than a width of the first pattern.

Abstract: According to one embodiment, a magnetic memory device includes a first wiring line extending in a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending in a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line and including a magnetoresistance effect element and a switching element which are stacked in a third direction intersecting the first direction and the second direction. The first wiring line includes a first conductive layer and a second conductive layer provided on the first conductive layer and formed of a material containing carbon (C).

Abstract: According to one embodiment, a magnetic memory device includes an electrode, and a magnetoresistance effect element provided on the electrode. The electrode includes a first electrode portion and a second electrode portion provided between the magnetoresistance effect element and the first electrode portion and containing a metal element selected from molybdenum (Mo) and ruthenium (Ru).

Abstract: According to one embodiment, a magnetic memory device includes a lower insulating layer, first and second conductive portions provided in the lower insulating layer, first and second memory cells provided on the lower insulating layer and on the respective first and second conductive portions, and each including a magnetoresistance effect element, a switching element and a bottom electrode connected to corresponding one of the first and second conductive portions. As viewed from a third direction, a width of each of the first and second conductive portions is less than a width of a corresponding bottom electrode. The lower insulating layer has a void under a region between the first and second memory cells.

Abstract: Disclosed is a thermoelectric generation system that generates electricity using waste heat from a steam condenser that exchanges heat with steam as cyclic water flows through a high temperature portion and a low temperature portion, the thermoelectric generation system including: a first hot-water discharge line used to discharge the cyclic water passing through the high temperature portion; a cyclic water circulation line through which the cyclic water from under water circulates; and a thermoelectric generation unit that generates electricity on the basis of a temperature difference between a temperature of the cyclic water flowing through the first hot-water discharge line and a temperature of the cyclic water flowing through the cyclic water circulation line.

Abstract: Disclosed is a thermoelectric generation system that generates electricity using waste heat from a steam condenser that exchanges heat with steam as cyclic water flows through a high temperature portion and a low temperature portion, the thermoelectric generation system including: a first hot-water discharge line used to discharge the cyclic water passing through the high temperature portion; a cyclic water circulation line through which the cyclic water from under water circulates; and a thermoelectric generation unit that generates electricity on the basis of a temperature difference between a temperature of the cyclic water flowing through the first hot-water discharge line and a temperature of the cyclic water flowing through the cyclic water circulation line.

Abstract: A slide bearing has an oil supply passage formed in a lower bearing portion, that supplies lubricating oil into clearance between an outer peripheral surface of a rotating shaft and lower and upper slide surfaces, and an oil discharge passage formed in the lower half bearing portion and discharges the lubricating oil from the clearance. The oil supply passage has a downstream portion and the oil discharge passage has an upstream portion which is provided at positions on opposite sides of the rotating shaft. The oil supply passage has an upstream portion extending toward the upstream portion of the oil discharge passage, and the oil discharge passage has a downstream portion extending toward the downstream portion of the oil supply passage.

Abstract: A slide bearing has an oil supply passage formed in a lower bearing portion, that supplies lubricating oil into clearance between an outer peripheral surface of a rotating shaft and lower and upper slide surfaces, and an oil discharge passage formed in the lower half bearing portion and discharges the lubricating oil from the clearance. The oil supply passage has a downstream portion and the oil discharge passage has an upstream portion which is provided at positions on opposite sides of the rotating shaft. The oil supply passage has an upstream portion extending toward the upstream portion of the oil discharge passage, and the oil discharge passage has a downstream portion extending toward the downstream portion of the oil supply passage.