Abstract: Provided is a method of adjusting an electron-beam irradiated area in an electron beam irradiation apparatus that deflects an electron beam with a deflector to irradiate an object with the electron beam, the method including: emitting an electron beam while changing an irradiation position on an adjustment plate by controlling the deflector in accordance with an electron beam irradiation recipe, the adjustment plate detecting a current corresponding to the emitted electron beam; acquiring a current value detected from the adjustment plate; forming image data corresponding to the acquired current value; determining whether the electron-beam irradiated area is appropriate based on the formed image data; and updating the electron beam irradiation recipe when the electron-beam irradiated area is determined not to be appropriate.

Abstract: An inspection system includes a TDI sensor that integrates amounts of secondary charged particles or electromagnetic waves along a predetermined direction at every timing at which a transfer clock is inputted and sequentially transfers the amounts of secondary charged particles or electromagnetic waves so integrated, and a deflector which deflects, based on a difference between an actual position and a target position of the inspection target, the secondary charged particles or electromagnetic waves directed towards the TDI sensor in a direction in which the difference is offset. The target position is set into something like a step-and-riser shape in which the target position is kept staying in the same position by a predetermined period of time that is equal to or shorter than a period of time from an input of the transfer clock to an input of the following transfer clock and thereafter rises by a predetermined distance.

Abstract: Provided is a method of adjusting an electron-beam irradiated area in an electron beam irradiation apparatus that deflects an electron beam with a deflector to irradiate an object with the electron beam, the method including: emitting an electron beam while changing an irradiation position on an adjustment plate by controlling the deflector in accordance with an electron beam irradiation recipe, the adjustment plate detecting a current corresponding to the emitted electron beam; acquiring a current value detected from the adjustment plate; forming image data corresponding to the acquired current value; determining whether the electron-beam irradiated area is appropriate based on the formed image data; and updating the electron beam irradiation recipe when the electron-beam irradiated area is determined not to be appropriate.

Abstract: An electron beam inspection device includes: a primary electron optical system that irradiates the surface of a sample with an electron beam; and a secondary electron optical system that gathers secondary electrons emitted from the sample and forms an image on the sensor surface of a detector. An electron image of the surface of the sample is obtained from a signal detected by the detector, and the sample is inspected. A cylindrical member that is formed with conductors stacked as an inner layer and an outer layer, and an insulator stacked as an intermediate layer is provided inside a lens tube into which the secondary electron optical system is incorporated. An electron orbital path is formed inside the cylindrical member, and the members constituting the secondary electron optical system are arranged outside the cylindrical member.

Abstract: An electron beam inspection device includes: a primary electron optical system that irradiates the surface of a sample with an electron beam; and a secondary electron optical system that gathers secondary electrons emitted from the sample and forms an image on the sensor surface of a detector. An electron image of the surface of the sample is obtained from a signal detected by the detector, and the sample is inspected. A cylindrical member that is formed with conductors stacked as an inner layer and an outer layer, and an insulator stacked as an intermediate layer is provided inside a lens tube into which the secondary electron optical system is incorporated. An electron orbital path is formed inside the cylindrical member, and the members constituting the secondary electron optical system are arranged outside the cylindrical member.

Abstract: A surface processing apparatus is an apparatus which performs surface processing on an inspection object 20 by irradiating the inspection object with an electron beam. A surface processing apparatus includes: an electron source 10 (including lens system that controls beam shape of electron beam) which generates an electron beam; a stage 30 on which an inspection object 20 to be irradiated with the electron beam is set; and an optical microscope 110 for checking a position to be irradiated with the electron beam. The current value of the electron beam which irradiates the inspection object 20 is set at 10 nA to 100 A.

Abstract: A control unit for generating a timing signal for an imaging unit in an inspection system in which an image of an inspection target object is captured by the imaging unit while the inspection target object is caused to travel in a predetermined direction includes a traveling distance determination section configured to detect a traveling distance of the inspection target object based on a count value acquired as an integer value from a laser interferometer provided in the inspection system for detecting a traveling distance of the inspection target object, and configured to determine whether the detected traveling distance reaches a threshold, and a timing signal generation section configured to generate a timing signal when it is determined that the detected traveling distance reaches the threshold. The traveling distance determination section executes the determination by using a plurality of values selectively as the threshold.

Abstract: A substrate is irradiated by primary electrons and secondary electrons generated from the substrate are detected by a detector. A reference die is placed on the stage to obtain a pattern matching template image including feature coordinates of the reference die. A pattern matching is performed with an arbitrary die in a row or column including the reference die using the template image to obtain feature coordinates of the arbitrary die. An angle of misalignment is calculated between the direction of the row or column including the reference die and one of the directions of movement of the substrate on the basis of the feature coordinates of the arbitrary die and those of the reference die. The stage is rotated to correct the angle of misalignment to conform the direction of the row or column including the reference die with the one of the directions of movement of the substrate.

Abstract: A surface processing apparatus is an apparatus which performs surface processing on an inspection object 20 by irradiating the inspection object with an electron beam. A surface processing apparatus includes: an electron source 10 (including lens system that controls beam shape of electron beam) which generates an electron beam; a stage 30 on which an inspection object 20 to be irradiated with the electron beam is set; and an optical microscope 110 for checking a position to be irradiated with the electron beam. The current value of the electron beam which irradiates the inspection object 20 is set at 10 nA to 100 A.

Abstract: A control unit for generating a timing signal for an imaging unit in an inspection system in which an image of an inspection target object is captured by the imaging unit while the inspection target object is caused to travel in a predetermined direction includes a traveling distance determination section configured to detect a traveling distance of the inspection target object based on a count value acquired as an integer value from a laser interferometer provided in the inspection system for detecting a traveling distance of the inspection target object, and configured to determine whether the detected traveling distance reaches a threshold, and a timing signal generation section configured to generate a timing signal when it is determined that the detected traveling distance reaches the threshold. The traveling distance determination section executes the determination by using a plurality of values selectively as the threshold.

Abstract: An inspection system includes a primary optical system configured to irradiate a charged particle or an electromagnetic wave as a beam, a movable unit configured to hold an inspection target and move the target through a position where the beam is irradiated, and a TDI sensor configured to integrate an amount of secondary charged particles in a predetermined direction to sequentially transfer the integrated amount. The secondary charged particles are obtained by irradiating the beam onto the target while moving the movable unit in the predetermined direction. The inspection system further includes a prevention module configured to prevent an arrival of the beam at the target side or an arrival of the secondary charged particles at the TDI sensor during a time period from one transfer to the following transfer after the elapse of a predetermined length of time from the one transfer and until the following transfer.

Abstract: A substrate is irradiated by primary electrons and secondary electrons generated from the substrate are detected by a detector. A reference die is placed on the stage to obtain a pattern matching template image including feature coordinates of the reference die. A pattern matching is performed with an arbitrary die in a row or column including the reference die using the template image to obtain feature coordinates of the arbitrary die. An angle of misalignment is calculated between the direction of the row or column including the reference die and one of the directions of movement of the substrate on the basis of the feature coordinates of the arbitrary die and those of the reference die. The stage is rotated to correct the angle of misalignment to conform the direction of the row or column including the reference die with the one of the directions of movement of the substrate.

Abstract: An inspection system includes a TDI sensor that integrates amounts of secondary charged particles or electromagnetic waves along a predetermined direction at every timing at which a transfer clock is inputted and sequentially transfers the amounts of secondary charged particles or electromagnetic waves so integrated, and a deflector which deflects, based on a difference between an actual position and a target position of the inspection target, the secondary charged particles or electromagnetic waves directed towards the TDI sensor in a direction in which the difference is offset. The target position is set into something like a step-and-riser shape in which the target position is kept staying in the same position by a predetermined period of time that is equal to or shorter than a period of time from an input of the transfer clock to an input of the following transfer clock and thereafter rises by a predetermined distance.

Abstract: A substrate is irradiated by primary electrons and secondary electrons generated from the substrate are detected by a detector. A reference die is placed on the stage to obtain a pattern matching template image including feature coordinates of the reference die. A pattern matching is performed with an arbitrary die in a row or column including the reference die using the template image to obtain feature coordinates of the arbitrary die. An angle of misalignment is calculated between the direction of the row or column including the reference die and one of the directions of movement of the substrate on the basis of the feature coordinates of the arbitrary die and those of the reference die. The stage is rotated to correct the angle of misalignment to conform the direction of the row or column including the reference die with the one of the directions of movement of the substrate.

Abstract: An inspection system includes a primary optical system configured to irradiate a charged particle or an electromagnetic wave as a beam, a movable unit configured to hold an inspection target and move the target through a position where the beam is irradiated, and a TDI sensor configured to integrate an amount of secondary charged particles in a predetermined direction to sequentially transfer the integrated amount. The secondary charged particles are obtained by irradiating the beam onto the target while moving the movable unit in the predetermined direction. The inspection system further includes a prevention module configured to prevent an arrival of the beam at the target side or an arrival of the secondary charged particles at the TDI sensor during a time period from one transfer to the following transfer after the elapse of a predetermined length of time from the one transfer and until the following transfer.

Abstract: An inspecting apparatus for reducing a time loss associated with a work for changing a detector is characterized by comprising a plurality of detectors 11, 12for receiving an electron beam emitted from a sample W to capture image data representative of the sample W, and a switching mechanism M for causing the electron beam to be incident on one of the plurality of detectors 11, 12, where the plurality of detectors 11, 12 are disposed in the same chamber MC. The plurality of detectors 11, 12 can be an arbitrary combination of a detector comprising an electron sensor for converting an electron beam into an electric signal with a detector comprising an optical sensor for converting an electron beam into light and converting the light into an electric signal. The switching mechanism M may be a mechanical moving mechanism or an electron beam deflector.

Abstract: A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.

Abstract: A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.

Abstract: An inspecting apparatus for reducing a time loss associated with a work for changing a detector is characterized by comprising a plurality of detectors 11, 12 for receiving an electron beam emitted from a sample W to capture image data representative of the sample W, and a switching mechanism M for causing the electron beam to be incident on one of the plurality of detectors 11, 12, where the plurality of detectors 11, 12 are disposed in the same chamber MC. The plurality of detectors 11, 12 can be an arbitrary combination of a detector comprising an electron sensor for converting an electron beam into an electric signal with a detector comprising an optical sensor for converting an electron beam into light and converting the light into an electric signal. The switching mechanism M may be a mechanical moving mechanism or an electron beam deflector.

Abstract: An inspecting apparatus for reducing a time loss associated with a work for changing a detector is characterized by comprising a plurality of detectors 11, 12 for receiving an electron beam emitted from a sample W to capture image data representative of the sample W, and a switching mechanism M for causing the electron beam to be incident on one of the plurality of detectors 11, 12, where the plurality of detectors 11, 12 are disposed in the same chamber MC. The plurality of detectors 11, 12 can be an arbitrary combination of a detector comprising an electron sensor for converting an electron beam into an electric signal with a detector comprising an optical sensor for converting an electron beam into light and converting the light into an electric signal. The switching mechanism M may be a mechanical moving mechanism or an electron beam deflector.