Abstract: To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas. A cobalt complex represented by the following formula (1): wherein L1 and L2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C): wherein R1 and R2 represent a C1-6 alkyl group or a tri(C1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom; wherein R3 represents a tri(C1-6 alkyl)silyl group, R4 and R5 represent a C1-4 alkyl group, and X represents a C1-6 alkylene group; wherein R6 and R8 represent a C1-6 alkyl group, R7 represents a hydrogen atom or a C1-4 alkyl group, Y represents an oxygen atom or NR9, Z represents an oxygen atom or NR10, and R9 and R10 independently represent a C1-6 alkyl group.

Abstract: To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas. A cobalt complex represented by the following formula (1): L1-Co-L2??(1) wherein L1 and L2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C): wherein R1 and R2 represent a C1-6 alkyl group or a tri(C1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom; wherein R3 represents a tri(C1-6 alkyl)silyl group, R4 and R5 represent a C1-4 alkyl group, and X represents a C1-6 alkylene group; wherein R6 and R8 represent a C1-6 alkyl group, R7 represents a hydrogen atom or a C1-4 alkyl group, Y represents an oxygen atom or NR9, Z represents an oxygen atom or NR10, and R9 and R10 independently represent a C1-6 alkyl group.

Abstract: Provided is a cobalt complex which is useful for the production of a cobalt-containing thin film under conditions where no oxidizing gas is used. A cobalt complex represented by general formula (1) (wherein R1 represents a silyloxy group represented by general formula (2) (wherein R6, R7 and R8 independently represent an alkyl group having 1 to 6 carbon atoms); R2 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a silyloxy group represented by general formula (2); R3, R4 and R5 independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and L represents a diene having 4 to 10 carbon atoms) is used.

Abstract: Provided is a cobalt complex which is useful for the production of a cobalt-containing thin film under conditions where no oxidizing gas is used. A cobalt complex represented by general formula (1) (wherein R1 represents a silyloxy group represented by general formula (2) (wherein R6, R7 and R8 independently represent an alkyl group having 1 to 6 carbon atoms); R2 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a silyloxy group represented by general formula (2); R3, R4 and R5 independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and L represents a diene having 4 to 10 carbon atoms) is used.

Abstract: A compound useful for the manufacture of a Group 5 metal oxide film is provided. The compound is a Group 5 metal oxo-alkoxo complex represented by the following formula (A), and after preparing a film-forming material solution containing the compound and an organic solvent, a Group 5 metal oxide film can be manufactured using the film-forming material solution: M?(?4-O)?(?3-O)?(?-O)?(?-ORA)?(ORA)?(RAOH)?X?Y???(A) (wherein M represents a niobium atom, etc.; RA represents an alkyl group; X represents an alkylenedioxy group; Y represents a carboxy group, etc.; ? represents an integer of 3 to 10; ? represents 0 or 1; ? represents an integer of 0 to 8; ? represents an integer of 2 to 9; ? represents an integer of 0 to 6; ? represents an integer of 6 to 16; ? represents an integer of 0 to 4; ? represents an integer of 0 to 2; and ? represents an integer of 0 to 6).

Abstract: An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

Abstract: A compound useful for the manufacture of a Group 5 metal oxide film is provided. The compound is a Group 5 metal oxo-alkoxo complex represented by the following formula (A), and after preparing a film-forming material solution containing the compound and an organic solvent, a Group 5 metal oxide film can be manufactured using the film-forming material solution: M?(?4-O)?(?3-O)?(?-O)?(?-ORA)?(ORA)?(RAOH)?X?Y???(A) (wherein M represents a niobium atom, etc.; RA represents an alkyl group; X represents an alkylenedioxy group; Y represents a carboxy group, etc.; ? represents an integer of 3 to 10; ? represents 0 or 1; ? represents an integer of 0 to 8; ? represents an integer of 2 to 9; ? represents an integer of 0 to 6; ? represents an integer of 6 to 16; ? represents an integer of 0 to 4; ? represents an integer of 0 to 2; and ? represents an integer of 0 to 6).

Abstract: This invention aims at providing a material from which a silicon-containing thin film can be efficiently produced at a low temperature of 500° C. or less without using plasma or the like. The invention relates to produce a hydrosilane derivative represented by the general formula (1?) by reacting a chlorosilane derivative (3) with a compound M2Z (4) and produce the silicon-containing thin film by using the hydrosilane derivative as the material. In the formulae, R1, R2 are defined in the specification.

Abstract: An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

Abstract: A subject for the invention is to provide novel titanium complexes which have a high vapor pressure and high thermal stability and serve as an excellent material for producing a titanium-containing thin film by a technique such as the CVD method or ALD method and to further provide processes for producing these complexes, titanium-containing thin films produced from the complexes, and a process for producing the thin films. The invention relates to producing a titanium complex represented by general formula (1): (wherein R1 and R4 each independently represent an alkyl group having 1-16 carbon atoms; R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1-3 carbon atoms; and R5 represents an alkyl group which has 1-16 carbon atoms and may have been substituted with one or more fluorine atoms) and to producing a titanium-containing thin film using the complex.

Abstract: This invention aims at providing a material from which a silicon-containing thin film can be efficiently produced at a low temperature of 500° C. or less without using plasma or the like. The invention relates to produce a hydrosilane derivative represented by the general formula (1?) by reacting a chlorosilane derivative (3) with a compound M2Z (4) and produce the silicon-containing thin film by using the hydrosilane derivative as the material. In the formulae, R1, R2 are defined in the specification.

Abstract: A subject for the invention is to provide novel titanium complexes which have a high vapor pressure and high thermal stability and serve as an excellent material for producing a titanium-containing thin film by a technique such as the CVD method or ALD method and to further provide processes for producing these complexes, titanium-containing thin films produced from the complexes, and a process for producing the thin films. The invention relates to producing a titanium complex represented by general formula (1): (wherein R1 and R4 each independently represent an alkyl group having 1-16 carbon atoms; R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1-3 carbon atoms; and R5 represents an alkyl group which has 1-16 carbon atoms and may have been substituted with one or more fluorine atoms) and to producing a titanium-containing thin film using the complex.

Abstract: Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

Abstract: Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

Abstract: A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1 and R3 each represents C1-6 alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4 and R5 each represents C1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases).

Abstract: A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1 and R3 each represents C1-6 alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4 and R5 each represents C1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases.

Abstract: Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

Abstract: Objects of the present invention are to provide a novel titanium complex that has good vaporization characteristics and an excellent thermal stability, and becomes a raw material for forming a titanium-containing thin film by methods such as CVD method or ALD method, its production method, a titanium-containing thin film formed using the same, and its formation method. In the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) and metallic lithium, and then reacting a tetrakisamide complex represented by the general formula (3). (In the formulae, R1 and R4 represent an alkyl group having from 1 to 6 carbon atoms. R2 and R3 each independently represents a hydrogen atom or an alkyl group having from 1 to 3 carbon atoms. R5 and R6 each independently represents an alkyl group having from 1 to 4 carbon atoms.).

Abstract: A novel tantalum compound, a method for producing the novel tantalum compound, and a method for stably forming a tantalum-containing thin film which contains the desired element. The tantalum compound enables one to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element.

Abstract: Objects of the present invention are to provide a novel tantalum compound which enables to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element, and a method for producing the same, and further provide a method for stably forming a tantalum-containing thin film which contains the desired element. The present invention relates to a tantalum compound represented by the following formula (1) (In the formula, R1 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), or a tantalum compound represented by the general formula (2) (In the formula, R2 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), and a method for producing the same.