Abstract: A manufacturing method of an electronic device includes forming a support layer that is provided to extend from a first surface of a functional layer formed on a first substrate via a first layer, as a surface on a side opposite to the first substrate, to the first substrate and supports the functional layer with respect to the first substrate, forming a thin film holding layer on at least one of the support layer and the first surface of the functional layer, removing the first layer, joining a transfer member to a surface of the thin film holding layer on a side opposite to the functional layer, separating the functional layer, the support layer and the thin film holding layer from the first substrate, transferring the functional layer, the support layer and the thin film holding layer to a different second substrate, and removing the thin film holding layer.

Abstract: A manufacturing method of a semiconductor element includes forming a plurality of islands, each including a semiconductor layer containing a nitride semiconductor and a support formed on the semiconductor layer, on a sapphire substrate, joining the support to a retention substrate via an adhesive member, peeling off the semiconductor layer from the sapphire substrate by irradiating the semiconductor layer with laser light, and polishing a surface of the semiconductor layers peeled off from the sapphire substrate.

Abstract: A manufacturing method of a semiconductor element includes forming a plurality of semiconductor layers on a sapphire substrate, each of the semiconductor layers having a first surface on the sapphire substrate side and a second surface on the opposite side, joining the second surfaces of the plurality of semiconductor layers to a retention member via an adhesive member, peeling off the plurality of semiconductor layers from the sapphire substrate by irradiating the first surfaces of the plurality of semiconductor layers with laser light, and polishing the first surfaces of the plurality of semiconductor layers. At least one semiconductor layer among the plurality of semiconductor layers includes a polishing indication part extending from the second surface toward the first surface. The polishing is executed until the polishing indication part is exposed to the polished surface.

Abstract: A piezoelectric-body film joint substrate includes a substrate, a first electrode provided on the substrate, a first piezoelectric-body film stuck on the first electrode and including a first piezoelectric film and a first upper electrode film formed on the first piezoelectric film, a second electrode provided on the substrate, and a second piezoelectric-body film stuck on the second electrode and including a second piezoelectric film different from the first piezoelectric film and a second upper electrode film formed on the second piezoelectric film, wherein a height from an upper surface of the substrate, on which the first electrode and the second electrode are formed, to a top of the first upper electrode film and a height from the upper surface of the substrate to a top of the second upper electrode film differ from each other.

Abstract: A piezoelectric film integrated device includes a substrate; an electrode provided on the substrate; a first piezoelectric element that is provided on the electrode and includes a first monocrystalline piezoelectric film and a first electrode film superimposed on the first monocrystalline piezoelectric film; and a second piezoelectric element that is provided on the first piezoelectric element and includes a second monocrystalline piezoelectric film and a second electrode film superimposed on the second monocrystalline piezoelectric film.

Abstract: A piezoelectric film integrated device include a substrate; a first electrode provided on the substrate; a second electrode provided on the substrate; a first monocrystalline piezoelectric film provided on the first electrode; a second monocrystalline piezoelectric film provided on the second electrode and having a crystal structure different from a crystal structure of the first monocrystalline piezoelectric film; a third electrode provided on the first monocrystalline piezoelectric film; and a fourth electrode provided on the second monocrystalline piezoelectric film.

Abstract: A piezoelectric-body film joint substrate includes a substrate, a substrate electrode provided on the substrate, a first piezoelectric-body film stuck on the substrate electrode and including a first piezoelectric film and a first upper electrode film formed on the first piezoelectric film, and a second piezoelectric-body film stuck on the first upper electrode film and including a second piezoelectric film different from the first piezoelectric film and a second upper electrode film formed on the second piezoelectric film.

Abstract: An electronic structure includes a substrate having a first surface; a functional unit including a functional section that has an electronic function and a protective member that protects the functional section and having a second surface formed on the first surface’s side; and a support layer provided at a position to contact the first surface and having a third surface in contact with the second surface of the functional unit, area of the third surface being smaller than area of the second surface, wherein one of part of the functional unit forming the second surface of the protective member and part of the support layer forming the third surface contains organic material as its principal component and the other contains inorganic material as its principal component.

Abstract: A semiconductor device includes: a first layer including a first optical semiconductor element; a second layer including a second optical semiconductor element having a lower conversion efficiency than the first optical semiconductor element; and a lens member. The first optical semiconductor element and the second optical semiconductor element are disposed between the lens member and a focal point of the lens member in an optical axis direction of the lens member, at least partially overlap as viewed in the optical axis direction, and are disposed so that the second optical semiconductor element is closer to the focal point than the first optical semiconductor element.

Abstract: A light emitting device includes: a first layer in which a first light emitting element is disposed; a second layer stacked on the first layer and including a second light emitting element that at least partially overlaps the first light emitting element as viewed in a light emitting direction perpendicular to a light emitting surface of the first light emitting element; and a control substrate on which the first layer is stacked and that controls light emission of the first light emitting element and the second light emitting element. The first layer includes a first surface facing the second layer in the light emitting direction, a second surface facing the control substrate in the light emitting direction, and a first opening formed from the first surface to the second surface. The second light emitting element and the control substrate are electrically connected together through the first opening.

Abstract: A semiconductor element unit includes a semiconductor element; and a first electrode having a flat first electrode mounting surface whose surface roughness is less than or equal to 10 [nm] and forming eutectic bonding with the semiconductor element in a part different from the first electrode mounting surface. A semiconductor element unit supply substrate includes one or more semiconductor element units. A semiconductor packaging circuit includes the semiconductor element unit.

Abstract: A light-emitting thyristor includes a first semiconductor layer of a P type, a second semiconductor layer of an N type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the P type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the N type arranged adjacent to the third semiconductor layer. A part of the first semiconductor layer is an active layer adjacent to the second semiconductor layer. A dopant concentration of the active layer is higher than or equal to a dopant concentration of the third semiconductor layer. A thickness of the third semiconductor layer is thinner than a thickness of the second semiconductor layer. A dopant concentration of the second semiconductor layer is lower than the dopant concentration of the third semiconductor layer.

Abstract: A composite integrated film includes a base member thin film having a base member first surface and a base member second surface facing each other, one or more penetration parts penetrating the base member first surface and the base member second surface of the base member thin film, one or more electrodes each including an electrical path part formed between the base member first surface and the base member second surface via the penetration part and an electrode surface in a planar shape formed on the base member second surface's side, and one or more elements provided on the base member first surface of the base member thin film and electrically connected to the electrodes, wherein the electrode surface and the base member second surface form a same flat surface.

Abstract: Provided is a light emitting device that includes a substrate including electrodes; a film member; light emitting elements arranged on the film member; and conductive members that electrically connect the light emitting elements and the electrodes to each other, wherein the film member has through holes formed at positions corresponding to the electrodes, and each of the conductive members includes a first conductive part extending from the light emitting element to the through hole and a second conductive part connecting the first conductive part and the electrode to each other via the through hole.

Abstract: A light emitting device includes a pixel set unit that includes a plurality of pixels arranged in a grid; first common wiring that connects together first terminals of pixels aligned in a first direction among the plurality of pixels; and second common wiring that connects together second terminals of two pixels aligned in a second direction orthogonal to the first direction among the plurality of pixels.

Abstract: A semiconductor device includes a base material and light emitting elements (or LEE) aligned in a first direction on the base material. Among the LEEs, a first LEE is provided with a first semiconductor multilayer structure and a first organic insulating film. Among the LEEs, a second LEE is provided with a second semiconductor multilayer structure and a second organic insulating film. A first multilayer structure width is smaller than a second multilayer structure width that is the first direction width of the second semiconductor multilayer structure, a first multilayer structure thickness is narrower than a second multilayer structure thickness, and a first film thickness is greater than a second film thickness wherein the first film thickness is a thickness of a portion of the first organic insulating film and a second film thickness is a thickness of a portion of the second organic insulating film.

Abstract: A light-emitting thyristor includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the first conductivity type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type arranged adjacent to the third semiconductor layer. The first semiconductor layer includes an active layer adjacent to the second semiconductor layer, the second semiconductor layer includes a first layer adjacent to the active layer and a second layer arranged between the first layer and the third semiconductor layer, and the first layer has a band gap wider than a band gap of the active layer and a band gap of the second layer.

Abstract: A light-emitting thyristor includes a first semiconductor layer of a P type, a second semiconductor layer of an N type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the P type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the N type arranged adjacent to the third semiconductor layer. A part of the first semiconductor layer is an active layer adjacent to the second semiconductor layer. A dopant concentration of the active layer is higher than or equal to a dopant concentration of the third semiconductor layer. A thickness of the third semiconductor layer is thinner than a thickness of the second semiconductor layer. A dopant concentration of the second semiconductor layer is lower than the dopant concentration of the third semiconductor layer.

Abstract: A light-emitting thyristor includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the first conductivity type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type arranged adjacent to the third semiconductor layer. The first semiconductor layer includes an active layer adjacent to the second semiconductor layer, the second semiconductor layer includes a first layer adjacent to the active layer and a second layer arranged between the first layer and the third semiconductor layer, and the first layer has a band gap wider than a band gap of the active layer and a band gap of the second layer.

Abstract: A semiconductor device includes a light-emitting thyristor, including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of the second conductivity type, and first to third electrodes. The first semiconductor layer includes a first layer, a second layer having a band gap wider than band gaps of the second semiconductor layer and the third semiconductor layer, and a third layer having an impurity concentration higher than impurity concentrations of the second semiconductor layer and the third semiconductor layer and having a band gap narrower than or equal to the band gaps of the second semiconductor layer and the third semiconductor layer.