Patents by Inventor Kenichi Tsujio

Kenichi Tsujio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7553467
    Abstract: There is provided a reaction vessel whereby silicon produced can be smoothly recovered dropwise without excessive thermal load on constitutional parts of the reaction vessel, a silicon deposition feedstock gas can be reacted efficiently even when the reaction vessel is scaled up to industrial large-scale equipment, generation of silicon fine powder and silane oligomers can be suppressed, and industrial silicon production can be performed over extended periods. The tubular reaction vessel comprises a longitudinally-extending wall with a space thereinside, wherein a silicon deposition feedstock gas inflow opening and a deposited silicon discharge opening are provided at an upper portion and a lower end portion respectively, and a flow resistance-increasing region is created on a wall surface of the tubular reaction vessel that is contacted with a feedstock gas. The flow resistance-increasing region is at least one of protrudent, concave and sloped regions.
    Type: Grant
    Filed: August 11, 2004
    Date of Patent: June 30, 2009
    Assignee: Tokuyama Corporation
    Inventors: Satoru Wakamatsu, Shigeki Sugimura, Yasuo Nakamura, Kenichi Tsujio
  • Publication number: 20060219161
    Abstract: There is provided a reaction vessel whereby silicon produced can be smoothly recovered dropwise without excessive thermal load on constitutional parts of the reaction vessel, a silicon deposition feedstock gas can be reacted efficiently even when the reaction vessel is scaled up to industrial large-scale equipment, generation of silicon fine powder and silane oligomers can be suppressed, and industrial silicon production can be performed over extended periods. The tubular reaction vessel comprises a longitudinally-extending wall with a space thereinside, wherein a silicon deposition feedstock gas inflow opening and a deposited silicon discharge opening are provided at an upper portion and a lower end portion respectively, and a flow resistance-increasing region is created on a wall surface of the tubular reaction vessel that is contacted with a feedstock gas. The flow resistance-increasing region is at least one of protrudent, concave and sloped regions.
    Type: Application
    Filed: August 11, 2004
    Publication date: October 5, 2006
    Inventors: Satoru Wakamatsu, Shigeki Sugimura, Yasuo Nakamura, Kenichi Tsujio