Abstract: A MOS field effect transistor (MOSFET) comprising a semiconductor substrate 11 having thereon a gate silicon dioxide film 12 and a gate electrode 13 both formed by patterning, wherein in only at least one edge of gate lengthwise direction of the gate silicon dioxide film 12 is formed a region 14 containing an element (e.g. nitrogen) which is different from the elements constituting the silicon dioxide film and whose energy of bonding with silicon is larger than the energy of hydrogen-silicon bonding. In this MOSFET, the reliability reduction caused by the local degradation of the gate silicon dioxide film appearing at the edge of its lengthwise direction can be suppressed and, moreover, the property reduction can be suppressed.