Abstract: A Ni-based alloy comprises nitrides, of which an estimated largest size is an area-equivalent diameter of 12 ?m to 25 ?m, the estimated largest size of the nitrides being determined by calculating an area-equivalent diameter D which is defined as D=A1/2 in relation to an area A of a nitride with a largest size among nitrides present in a measurement field of view area S0 of an observation of the Ni-based alloy, repeatedly performing this operation for n times corresponding to a measurement field of view number n to acquire n pieces of data of the area-equivalent diameter D, arranging the pieces of data of area-equivalent diameter D in ascending order into D1, D2, . . .

Abstract: In a Ni-base alloy, an area-equivalent diameter D is calculated. D is defined by D=A1/2 from an area A of a largest nitride in a field of view when an observation area S0 is observed. This process is repeated in n fields of view for measurement, where n is the number of the fields of view for measurement, so as to acquire n pieces of data on D, and the pieces are arranged in ascending order D1, D2, . . . , Dn to obtain a reduced variate yj. The obtained values are plotted on X-Y axis coordinates, where an X axis corresponds to D and a Y axis corresponds to yj. In a regression line yj=a×D+b, yj is obtained when a target cross-sectional area S is set to 100 mm2. When the obtained yj is substituted into the regression line, the estimated nitride maximum size is ?25 ?m in diameter.

Abstract: A Ni-based alloy comprises nitrides, of which an estimated largest size is an area-equivalent diameter of 12 ?m to 25 ?m, the estimated largest size of the nitrides being determined by calculating an area-equivalent diameter D which is defined as D=A1/2 in relation to an area A of a nitride with a largest size among nitrides present in a measurement field of view area S0 of an observation of the Ni-based alloy, repeatedly performing this operation for n times corresponding to a measurement field of view number n to acquire n pieces of data of the area-equivalent diameter D, arranging the pieces of data of area-equivalent diameter D in ascending order into D1, D2, . . .

Abstract: A copper alloy wiring film of a flat panel display of the present invention and a sputtering target for forming the same have a composition including Mg: 0.1 to 5 atom %; either one or both of Mn and Al: 0.1 to 11 atom % in total; and Cu and inevitable impurities as the balance, and if necessary, may be further including P: 0.001 to 0.1 atom %.

Abstract: Methods to enhance the quality of grain boundary networks are described. The process can result in the production of a metal including a relatively large fraction of special grain boundaries (e.g., a fraction of special grain boundaries of at least about 55%).

Abstract: A copper alloy wiring film of a flat panel display of the present invention and a sputtering target for forming the same have a composition including Mg: 0.1 to 5 atom %; either one or both of Mn and Al: 0.1 to 11 atom % in total; and Cu and inevitable impurities as the balance, and if necessary, may be further including P: 0.001 to 0.1 atom %.

Abstract: In a Ni-base alloy, an area-equivalent diameter D is calculated. D is defined by D=A1/2 from an area A of a largest nitride in a field of view when an observation area S0 is observed. This process is repeated in n fields of view for measurement, where n is the number of the fields of view for measurement, so as to acquire n pieces of data on D, and the pieces are arranged in ascending order D1, D2, . . . , Dn to obtain a reduced variate yj. The obtained values are plotted on X-Y axis coordinates, where an X axis corresponds to D and a Y axis corresponds to yj. In a regression line yj=a×D+b, yj is obtained when a target cross-sectional area S is set to 100 mm2. When the obtained yj is substituted into the regression line, the estimated nitride maximum size is ?25 ?m in diameter.

Abstract: Methods to enhance the quality of grain boundary networks are described. The process can result in the production of a metal including a relatively large fraction of special grain boundaries (e.g., a fraction of special grain boundaries of at least about 55%).

Abstract: This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.

Abstract: This wiring layer structure includes: an underlying substrate of a semiconductor substrate or a glass substrate; an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate; an oxide layer containing at least one of Al, Zr, and Ti which is formed on the oxygen-containing Cu layer or the oxygen-containing Cu alloy layer; and a Cu alloy layer containing at least one of Al, Zr, and Ti which is formed on the oxide layer.

Abstract: Methods to enhance the quality of grain boundary networks are described. The process can result in the production of a metal including a relatively large fraction of special grain boundaries (e.g., a fraction of special grain boundaries of at least about 55%).

Abstract: This wiring layer structure includes: an underlying substrate of a semiconductor substrate or a glass substrate; an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate; an oxide layer containing at least one of Al, Zr, and Ti which is formed on the oxygen-containing Cu layer or the oxygen-containing Cu alloy layer; and a Cu alloy layer containing at least one of Al, Zr, and Ti which is formed on the oxide layer.

Abstract: This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.

Abstract: A copper alloy wiring film of a flat panel display of the present invention and a sputtering target for forming the same have a composition including Mg: 0.1 to 5 atom %; either one or both of Mn and Al: 0.1 to 11 atom % in total; and Cu and inevitable impurities as the balance, and if necessary, may be further including P: 0.001 to 0.1 atom %.

Abstract: This sputtering target for forming a thin film transistor wiring film has a composition including 0.1 at % to 5 at % of Mg, 0.1 at % to 10 at % of Ca, and the remainder being Cu and inevitable impurities. Either one or both of Mn and Al may further be included at a total amount in a range of 0.1 at % to 10 at %. 0.001 at % to 0.1 at % of P may further be included.

Abstract: A spectacle frame with ear bends each comprising an auricular front member connected to a temple, an auricular back member contactable with the back of the ear, and a connecting member for connecting the front member and the back member to be rotatable. The spectacle frame further comprises selective pressing means capable of changing a first state in which the back member presses the back of the ear with a second state in which the back member does not press the back of the ear.

Abstract: A spectacle frame with ear bends each comprising an auricular front member connected to a temple, an auricular back member connectable from the back of the ear, and a connecting member for connecting the front member and the back member to be rotatable. The spectacle frame further comprises selective pressing means capable of changing a first state in which the back member presses the back of the ear with a second state in which the back member does not press the back of the ear.

Abstract: This specification discloses a spectacle frame of titanium or titanium alloy having at least one location a brazed portion of titanium or titanium alloy joined with titanium or titanium alloy, or of titanium or titanium alloy joined with other metal, characterized in that silver-zinc alloy comprising 70-95% by weight of silver and 5-30% by weight of zinc is used as the brazing filler metal material for brazing.