Abstract: A communication management device includes circuitry that: receives captured image data of a captured image obtained by an image capturing device and time-series information representing a date and time associated with predetermined area information, the predetermined area information representing a predetermined area and is transmitted by a communication terminal that displays a predetermined area image of the predetermined area; and transmits, to the communication terminal, converted predetermined area image data obtained through perspective projection conversion based on the received captured image data and the received time-series information.

Abstract: An image capturing device includes an imaging device and circuitry. The imaging device captures an image. The circuitry defines a point of interest in the image, converts the defined point of interest in accordance with attitude information of the image capturing device, and cuts out a viewable area from the image. The viewable area includes the converted point of interest.

Abstract: An electrostatic chuck includes a ceramic base, a ceramic dielectric layer, an electrostatic electrode, and a ceramic insulating layer. The ceramic dielectric layer is positioned on the ceramic base and is thinner than the ceramic base. The electrostatic electrode is embedded between the ceramic dielectric layer and the ceramic base. The ceramic insulating layer is positioned on the ceramic dielectric layer and is thinner than the ceramic dielectric layer. The ceramic insulating layer has a higher volume resistivity and withstand voltage than the ceramic dielectric layer, and the ceramic dielectric layer has a higher dielectric constant than the ceramic insulating layer.

Abstract: A wafer placement table includes: an electrostatic chuck that is a ceramic sintered body in which an electrode for electrostatic adsorption is embedded; a cooling member which is bonded to a surface on an opposite side of a wafer placement surface of the electrostatic chuck, and cools the electrostatic chuck; a hole for power supply terminal, the hole penetrating the cooling member in a thickness direction; and a power supply terminal which is bonded to the electrode for electrostatic adsorption from the surface on the opposite side of the wafer placement surface of the electrostatic chuck, and is inserted in the hole for power supply terminal. The outer peripheral surface of a portion of the power supply terminal is covered with an insulating thin film that is formed by coating of an insulating material, the portion being inserted in the hole for power supply terminal.

Abstract: An electrostatic chuck heater according to the present invention includes an alumina substrate having a wafer placement surface on its upper surface; an electrostatic electrode, a resistance heating element provided for each zone, and a multilayer jumper wire for supplying power to the resistance heating element, which are buried in the alumina substrate in this order from the wafer placement surface side; a heating element coupling via for vertically coupling the resistance heating element to the jumper wire; and a power supply via extending outward for supplying power to the jumper wire. At least the heating element coupling via and the power supply via contain ruthenium metal.

Abstract: An electrostatic chuck assembly includes a ceramic body having a wafer placement surface that is a circular surface, and an F/R placement surface that is formed around the wafer placement surface and is positioned at a lower level than the wafer placement surface, a wafer attraction electrode embedded inside the ceramic body and positioned in a facing relation to the wafer placement surface, an F/R attraction electrode embedded inside the ceramic body and positioned in a facing relation to the F/R placement surface, a concave-convex region formed in the F/R placement surface to hold gas, a focus ring placed on the F/R placement surface, and a pair of elastic annular sealing members arranged between the F/R placement surface and the focus ring on the inner peripheral side and the outer peripheral side of the F/R placement surface, and surrounding the concave-convex region in a sandwiching relation.

Abstract: A wafer placement table is a ceramic sintered body with a surface provided with multiple projections that support a wafer. Of the surface of the ceramic sintered body, the area provided with no projection is a mirror surface which has a surface roughness Ra of 0.1 ?m or less. The projections are formed of an aerosol deposition film or a thermal spray film made of the same material as for the ceramic sintered body.

Abstract: An electrostatic chuck includes a first ceramic member disk-shaped and having an annular step surface outside a circular wafer holding surface thereof, the annular step surface being at a lower level than the wafer holding surface, the first ceramic member having a volume resistivity that allows Coulomb force to be exerted; a first electrode embedded in the first ceramic member at a position facing the wafer holding surface; a second electrode disposed on the annular step surface of the first ceramic member, the second electrode being independent of the first electrode; and a second ceramic member having an annular shape and configured to cover the annular step surface having the second electrode thereon, the second ceramic member having a volume resistivity that allows Johnsen-Rahbek force to be exerted, wherein an upper surface of the second ceramic member is a focus ring holding surface on which a focus ring is placed.

Abstract: A ceramic heater with a shaft includes: a ceramic plate in which a resistance heating element is embedded; a hollow ceramic shaft having an upper end bonded to a surface on an opposite side of a wafer placement surface of the ceramic plate; and a shaft heater embedded in a side wall near an upper end of the ceramic shaft.

Abstract: A ceramic heater with a shaft includes: a ceramic plate in which resistance heating element is embedded; a hollow ceramic shaft bonded to the surface on an opposite side of a wafer placement surface of the ceramic plate; a conductive film provided in an axial direction to extend on the internal circumferential surface of the ceramic shaft; a recessed section provided to reach a terminal of the resistance heating element from the surface on the opposite side of the wafer placement surface of the ceramic plate, the recessed section having a bottom surface to which a lower surface of the terminal is exposed and a lateral surface to which a surface of the conductive film is exposed; and a connection member which is filled in the recessed section, and electrically connects the lower surface of the terminal and the surface of the conductive film.

Abstract: An electrostatic chuck heater includes an electrostatic chuck including an electrostatic electrode embedded in a ceramic sintered body, a cooling member cooling the electrostatic chuck, and a heater layer disposed between the electrostatic chuck and the cooling member and including a plurality of metal layers embedded therein in multiple stages, the metal layers including resistance heating element layers. The heater layer includes a ceramic insulating layer with a thickness of 2 ?m or more and 50 ?m or less between the metal layers.

Abstract: A ceramic heater with a shaft includes: a ceramic plate in which resistance heating elements are embedded; a hollow ceramic shaft bonded to a surface on an opposite side of a wafer placement surface of the ceramic plate; multiple vertical grooves provided in an internal circumferential surface of the ceramic shaft in an axial direction; conductive films provided in the multiple vertical grooves, respectively; and connection members that each electrically connect a terminal of the resistance heating elements to a corresponding one of the conductive films.

Abstract: A ceramic heater with a shaft includes a ceramic plate in which an RF electrode and a resistance heating element are embedded; a hollow ceramic shaft provided on a surface on an opposite side of a wafer placement surface of the ceramic plate; an RF power supply rod which is housed in an inner space of the ceramic shaft, and a heating element power supply rod which is housed in the inner space of the ceramic shaft, wherein an outer circumferential surface of a portion of at least one of the RF power supply rod and the heating element power supply rod is covered with an insulating thin film which is an aerosol deposition film or a thermal spray film, the portion being located in the inner space of the ceramic shaft.

Abstract: An electrostatic chuck includes a ceramic base, a ceramic dielectric layer, an electrostatic electrode, and a ceramic insulating layer. The ceramic dielectric layer is positioned on the ceramic base and is thinner than the ceramic base. The electrostatic electrode is embedded between the ceramic dielectric layer and the ceramic base. The ceramic insulating layer is positioned on the ceramic dielectric layer and is thinner than the ceramic dielectric layer. The ceramic insulating layer has a higher volume resistivity and withstand voltage than the ceramic dielectric layer, and the ceramic dielectric layer has a higher dielectric constant than the ceramic insulating layer.

Abstract: A wafer placement table includes: an electrostatic chuck that is a ceramic sintered body in which an electrode for electrostatic adsorption is embedded; a cooling member which is bonded to a surface on an opposite side of a wafer placement surface of the electrostatic chuck, and cools the electrostatic chuck; a hole for power supply terminal, the hole penetrating the cooling member in a thickness direction; and a power supply terminal which is bonded to the electrode for electrostatic adsorption from the surface on the opposite side of the wafer placement surface of the electrostatic chuck, and is inserted in the hole for power supply terminal. The outer peripheral surface of a portion of the power supply terminal is covered with an insulating thin film that is formed by coating of an insulating material, the portion being inserted in the hole for power supply terminal.

Abstract: An electrostatic chuck heater according to the present invention includes an alumina substrate having a wafer placement surface on its upper surface; an electrostatic electrode, a resistance heating element provided for each zone, and a multilayer jumper wire for supplying power to the resistance heating element, which are buried in the alumina substrate in this order from the wafer placement surface side; a heating element coupling via for vertically coupling the resistance heating element to the jumper wire; and a power supply via extending outward for supplying power to the jumper wire. At least the heating element coupling via and the power supply via contain ruthenium metal.

Abstract: The ceramic heater of the present invention includes: an alumina substrate having a wafer placement surface; resistance heating elements disposed in respective zones; multistage jumpers that supply electric power to the resistance heating elements, the resistance heating elements and the jumpers being embedded in the alumina substrate in this order from a wafer placement surface side; heating element connecting vias that vertically connect the resistance heating elements to the jumpers; and power supply vias exposed to the outside in order to supply electric power to the jumpers. The specific resistance of the heating element connecting vias is smaller than that of the resistance heating elements, and the absolute value of the difference between CTE of the heating element connecting vias and CTE of the alumina substrate is smaller than the absolute value of the difference between CTE of the resistance heating elements and CTE of the alumina substrate.

Abstract: The base material for printed circuit board according to one aspect of the present disclosure is a base material for printed circuit board comprising a base film having an insulating property, a sintering layer inducing a plurality of copper particles and formed on at least one surface of the base film and an electroless copper plating layer formed on a surface of the sintering layer, the surface being on an opposite side to the base film, and filled in the sintering layer, and wherein a lightness L* of a surface of the electroless copper plating layer, the surface being on an opposite side to the sintering layer, is 45.0 or more and 85.0 or less, a chromaticity a* thereof is 5.0 or more and 25.0 or less, and a chromaticity b* thereof is 5.0 or more and 25.0 or less.

Abstract: An electrostatic chuck assembly includes a ceramic body having a wafer placement surface that is a circular surface, and an F/R placement surface that is formed around the wafer placement surface and is positioned at a lower level than the wafer placement surface, a wafer attraction electrode embedded inside the ceramic body and positioned in a facing relation to the wafer placement surface, an F/R attraction electrode embedded inside the ceramic body and positioned in a facing relation to the F/R placement surface, a concave-convex region formed in the F/R placement surface to hold gas, a focus ring placed on the F/R placement surface, and a pair of elastic annular sealing members arranged between the F/R placement surface and the focus ring on the inner peripheral side and the outer peripheral side of the F/R placement surface, and surrounding the concave-convex region in a sandwiching relation.

Abstract: An electrostatic chuck includes a first ceramic member disk-shaped and having an annular step surface outside a circular wafer holding surface thereof, the annular step surface being at a lower level than the wafer holding surface, the first ceramic member having a volume resistivity that allows Coulomb force to be exerted; a first electrode embedded in the first ceramic member at a position facing the wafer holding surface; a second electrode disposed on the annular step surface of the first ceramic member, the second electrode being independent of the first electrode; and a second ceramic member having an annular shape and configured to cover the annular step surface having the second electrode thereon, the second ceramic member having a volume resistivity that allows Johnsen-Rahbek force to be exerted, wherein an upper surface of the second ceramic member is a focus ring holding surface on which a focus ring is placed.