Abstract: A method of generating electron-beam data used for creating a mask for a layout pattern of a semiconductor integrated circuit by parallel processing a layout pattern of a semiconductor integrated circuit with a parallel data processing unit based on at least one of (i) design layers of the semiconductor integrated circuit, (ii) fabrication processes used in fabricating a mask for the layout pattern, and (iii) segments, each segment being an electron-beam radiation region of the mask. The data processing is divided and divided portions of the data processing are as-signed to respective parallel-connected processing circuits. The parallel data processing unit includes a hierarchy developing A unit for developing, in parallel processing, a hierarchy of the layout pattern for respective design layers by assigning the hierarchy developing to respective parallel-connected processing circuits. The format of data processed by parallel processing is converted into electron-beam data and output.

Abstract: An electron-beam data generating device generates electron-beam data for creating a mask for a layout pattern of a semiconductor integrated circuit. The device includes processing circuits operating in parallel. The electron-beam data generating device also includes a data processing unit for processing, in parallel, the layout pattern based on at least one of several design layers of the semiconductor integrated circuit, the processes used in fabricating the mask, and segments of the mask, each segment serving as an electron-beam radiation region. The parallel processing is achieved by dividing the data processing and assigning each divided portion of the data processing to respective processing circuits. A format converting unit converts data processed by the processing unit into electron-beam data and outputs the electron-beam data.