Abstract: This invention relates to a light-receiving module in which transmission impedance of lead terminals are matched by simple method. The module has a semiconductor light-receiving device, such as a photo diode, a plurality of lead terminals for transmitting an electrical signal converted by the semiconductor device, and a metal base with a plurality of through holes, the lead terminals passes therethrough. The diameter of the lead terminal for signal transmission is smaller as compared with that of other lead terminal and the diameter of the through holes is adjusted and filled by a sealant glass with a dielectric constant so as to match the impedance thereof.

Abstract: This invention relates to a light-receiving module in which transmission impedance of lead terminals are, matched by simple method. The module has a semiconductor light-receiving device, such as a photo diode, a plurality of lead terminals for transmitting an electrical signal converted by the semiconductor device, and a metal base with a plurality of through holes, the lead terminals passes therethrough. The diameter of the lead terminal for signal transmission is smaller as compared with that of other lead terminal and the diameter of the through holes is adjusted and filled by a sealant glass with a dielectric constant so as to match the impedance thereof.

Abstract: This invention relates to a light-receiving module in which transmission impedance of lead terminals are matched by simple method. The module has a semiconductor light-receiving device, such as a photo diode, a plurality of lead terminals for transmitting an electrical signal converted by the semiconductor device, and a metal base with a plurality of through holes, the lead terminals passes therethrough. The diameter of the lead terminal for signal transmission is smaller as compared with that of other lead terminal and the diameter of the through holes is adjusted and filled by a sealant glass with a dielectric constant so as to match the impedance thereof.

Abstract: An optical module comprises a photodiode, an amplifying device, and a die capacitor. The die capacitor has at least a center pad, the photodiode is mounted thereon, and other pads on both side of the center pad. The die capacitor is mounted on a mounting surface of the module so as to locate the photodiode to be center of the surface. The amplifying device has a signal pad and a plural ground pad surrounding the signal pad. The signal pad is connected to the photodiode, while the ground pads are connected to the mounting surface through other pads on both side of the die capacitor.

Abstract: This invention relates to a light-receiving module in which transmission impedance of lead terminals are matched by simple method. The module has a semiconductor light-receiving device, such as a photo diode, a plurality of lead terminals for transmitting an electrical signal converted by the semiconductor device, and a metal base with a plurality of through holes, the lead terminals passes therethrough.

Abstract: An optical module comprises a photodiode, an amplifying device, and a die capacitor. The die capacitor has at least a center pad, the photodiode is mounted thereon, and other pads on both side of the center pad. The die capacitor is mounted on a mounting surface of the module so as to locate the photodiode to be center of the surface. The amplifying device has a signal pad and a plural ground pad surrounding the signal pad. The signal pad is connected to the photodiode, while the ground pads are connected to the mounting surface through other pads on both side of the die capacitor.

Abstract: A semiconductor-mounting heat-sink base for use with a plastic package or flexible printed wiring board which eliminates the possibility of semiconductor or package reliability being adversely affected due to a difference in thermal expansion coefficient between the heat sink base and the semiconductor or plastic package. The heat-sink base has a semiconductor-mounting portion comprising a Cu--W or Cu--Mo composite alloy containing 5 to 25 wt. % of copper made by an infiltration process, and a portion adjacent to a plastic package which comprises a copper or copper alloy containing not less than 95% of copper.

Abstract: A method for manufacturing heat-radiative substrates on which semiconductor devices such as ICs and transistors are mounted and packages using the substrates, wherein a plurality of CuW or CuMo composite materials obtained by the infiltration method or the mixed powder sintering method are joined together with Cu interposed therebetween. Accordingly, the remaining empty holes within the CuW or CuMo materials are filled sufficiently with Cu, allowing high-quality packages having a successful thermal characteristic to be obtained.

Abstract: A method for manufacturing heat-radiative substrates on which semiconductor devices such as ICs and transistors are mounted and packages using the substrates, wherein a plurality of CuW or CuMo composite materials obtained by the infiltration method or the mixed powder sintering method are joined together with Cu interposed therebetween. Accordingly, the remaining empty holes within the CuW or CuMo materials are filled sufficiently with Cu, allowing high-quality packages having a successful thermal characteristic to be obtained.