Abstract: A semiconductor memory device includes a semiconductor region including an active region for a memory transistor and plural depressions for trench isolation, insulating regions respectively provided at the depressions, a gate electrode and a gate insulation film. The gate electrode extends in a direction from one to the other of a first insulating region and second insulating region, and passes over the active region. The gate insulation film is provided between the gate electrode and the active region provided between the first and second insulating regions. The first and second insulating regions includes an adjacent region and a distant region. The distant region is adjacent to the adjacent region under the gate electrode. The adjacent region is adjacent to the active region under the gate electrode. The adjacent region is provided between the distant region and the active region, and has a smaller thickness than the distant region.

Abstract: A measurement device including: an ion-sensitive element; a reference electrode disposed in a state in which a measurement subject is interposed between the reference electrode and the ion-sensitive element; and a controller configured to: establish a first state at a predetermined interval, the first state being a state in which a current flows at the ion-sensitive element, and establish a second state within each period after the first state has been established and before the first state is next established, the second state being a state in which a potential difference between the ion-sensitive element and the reference electrode is greater than a potential difference between the ion-sensitive element and the reference electrode in the first state.

Abstract: A measurement device including: an ion-sensitive element; a reference electrode disposed in a state in which a measurement subject is interposed between the reference electrode and the ion-sensitive element; and a controller configured to: establish a first state at a predetermined interval, the first state being a state in which a current flows at the ion-sensitive element, and establish a second state within each period after the first state has been established and before the first state is next established, the second state being a state in which a potential difference between the ion-sensitive element and the reference electrode is greater than a potential difference between the ion-sensitive element and the reference electrode in the first state.

Abstract: A semiconductor device including: a first resistance element formed of a first polysilicon layer that contains impurities; a second resistance element provided on a same surface as the first polysilicon layer, and formed of a second polysilicon layer that contains an equal amount of impurities to the first polysilicon layer; a first interlayer insulation film provided so as to cover the first resistance element and the second resistance element; and a first metal layer provided on the first interlayer insulation film so as to cover the second resistance element with the first interlayer insulation film disposed therebetween.

Abstract: The present invention provides a semiconductor device including: a first resistance element formed of a first polysilicon layer that contains impurities; a second resistance element provided on a same surface as the first polysilicon layer, and formed of a second polysilicon layer that contains an equal amount of impurities to the first polysilicon layer; a first interlayer insulation film provided so as to cover the first resistance element and the second resistance element; and a first metal layer provided on the first interlayer insulation film so as to cover the second resistance element with the first interlayer insulation film disposed therebetween.

Abstract: A full-length cDNA encoding the human FGF23 protein was isolated, and mutants having a single amino acid substitution in the cDNA were constructed using the mutagenesis method. These mutants had the effect of decreasing the phosphorus level in the blood when expressed in vivo. These mutants and the DNAs encoding them are expected to be useful as therapeutic agents, or employed for gene therapy against hyperphosphatemia.