Abstract: It found out that a single crystal thin film which is excellent in crystallinity and comprises as the main ingredients at least one of more materials selected from a gallium nitride, an indium nitride, and an aluminum nitride can form on a substrate of a sintered compact which comprises as the main ingredients an aluminum nitride, a ceramic material having the crystal structure of a hexagonal system or a trigonal system, and a ceramic material having optical permeability. The above finding has allowed the preparation of a light emitting device excellent in luminous efficiency, an optical, waveguide exhibiting low loss, and a substrate for light emitting device mounting capable of controlling a direction of luminescence emitted to a substrate exterior.

Abstract: A substrate for forming a thin film composed mainly of gallium nitride, indium nitride or aluminum nitride, the substrate consisting of a sintered compact composed mainly of a ceramic material; and a thin-film substrate furnished with the thin film. The use of the sintered compact composed mainly of a ceramic material, especially translucent sintered compact, as the substrate enables formation thereon of a highly crystalline single-crystal thin film composed mainly of at least one member selected from among gallium nitride, indium nitride and aluminum nitride. Thus, there is provided a thin-film substrate furnished with a highly crystalline single-crystal thin film. Further, the use of the sintered compact composed mainly of a ceramic material enables providing of a light emitting element excelling in luminous efficiency.

Abstract: A rotating diverter head for use on a blow out preventer stack of an oil, gas or geothermal well. While providing for sealing and rotation of a drill pipe through the head, the head additional includes a flange on which the head is rotatable. The flange connects the head to the stack whereupon it can be rotated to align a return flow line before being locked in position.

Abstract: A compact, low electric resistance and high heat-spreading electric circuit substrate, which is suitable for an electric circuit used at microwave of 1 GHz or more as used in the field of wireless communication such as portable telephones or optical communication, is provided. Also provided is a joined body of glass-ceramic with aluminum nitride sintered body, the glass-ceramic containing crystals having the strongest line in the range of 2&thgr;=27.6°-28.2° in powder X-ray diffraction using CuK&agr; line, e.g., anorthite crystals, and having a composition containing 0.5-30 mass % of Zn component in terms of oxide, not more than 10 mass % in total of Ti component and Zr component in terms of corresponding oxides and not more than 5 mass % of Pb component in terms of oxide.

Abstract: A bodiesize, low electric resistance and high heat-spreading electric circuit substrate, which is suitable for an electric circuit used at microwave of 1 GHz or more as used in the field of wireless communication such as portable telephones or optical communication, is provided.

Abstract: An aluminum nitride substrate composed of a sintered body base material composed mainly of aluminum nitride and an aluminum oxide layer formed on the surface of the base material, wherein at least one of the base material and the aluminum oxide layer contains at least one member selected from the group consisting of single substances, carbidies, nitrides, borides and oxides of Ti, V, Nb, Mo, W, Co and Ni. This aluminum oxide layer is formed by an oxidizing treatment of the base material, and a metal conductor layer is formed on this aluminum oxide layer. This substrate has a very high allusion to the metal conductor layer.

Abstract: A package for mounting a semiconductor device comprises a base plate and a conductive layer laminated onto the base plate via an adhesive layer. The modulus of elasticity at 25.degree. C. of the adhesive layer is 10 kg/mm.sup.2 or less.

Abstract: The present invention provides a package for mounting of semiconductor device, wherein:(a) a power layer, a ground layer and a signal layer are laminated via an intermediate layer including an insulating layer,(b) the power layer and the ground layer are each constituted by an inner lead area, an outer lead area and an electro-conductive area, the inner lead area and the outer lead area being not covered with the intermediate layer and being exposed and the electro-conductive area being interposed between the inner lead area and the outer lead area and covered with the intermediate layer, and(c) substantially all of the electro-conductive area of each of the power layer and the ground layer is constituted by a planar electro-conductive member. In this package, the self-inductances of the power layer and the ground layer are low and the capacitor formed by these layers has a large capacity; therefore, the power line and ground line noise is reduced.

Abstract: A molded article is prepared from an AlN powder of a high purity without adding sintering assistant, baked in a nitrogen atmosphere without containing carbon, and is further heat-treated in a nitrogen atmosphere containing carbon in order to remove impurities in the sintered product. There is obtained a highly pure and dense sintered product which comprises mainly a phase of aluminum nitride, which has an average grain size of greater than 9 .mu.m, cationic metal impurities other aluminum, and Si, Fe and Ca in amounts smaller than predetermined values. The sintered product exhibits a very small creep rate when stress is applied thereto at high temperatures and is used as a material for high temperature uses such as a baking jig. Owing to its excellent anti-creeping property at high temperatures, tile product is suitably used as a structural material subject to stress at high temperatures for extended periods of time.

Abstract: An aluminum nitride sintered body having a thermal conductivity of at least 100 W/mK, preferably at least 120 W/mK, more preferably at least 140 W/mK, and most preferably at least 160 W/mK is produced by baking with a sintering additive using an aluminum nitride starting powder of high purity derived by direct nitriding of metallic aluminum. The sintering additive is selected from compounds of Group IIa, IIIa, and IIIb metals of the periodic table and preferably it comprises predominantly Y.sub.2 O.sub.3 or a precursor thereof. In one embodiment, the starting powder and the sintering additive are slurried with a binder and an organic solvent and shaped into a sheet. The sheet, after drying and binder removal, is suitable for use in making multilayered ceramic substrates, ceramic heaters, radiators, and the like.

Abstract: An aluminum nitride-based sintered body having a thermal conductivity of greater than 110 W/mK and a relative density of at least 90% and a process for the production thereof are disclosed. The sintered body contains minor amounts of at least one compound of a Group IIa metal and at least one compound of a Group IIIa metal of the Periodic Table and can be produced from an aluminum nitride starting powder prepared by direct nitriding of metallic aluminum powder and having a purity of at lest 99%, an oxygen content of lower than 1.8%, and an Si content of at most 1.0% by mixing the starting powder with powdery sintering additives consisting of at least one metal or compound of a Group IIa metal such as Ca and at least one metal or compound of a Group IIIa metal such as Y, shaping the powder mixture, and baking the shaped mixture at a relatively low temperature.

Abstract: An aluminum nitride-based sintered body having a thermal conductivity of greater than 110 W/mK and a relative density of at least 90% and a process for the production thereof are disclosed. The sintered body contains minor amounts of at least one compound of a Group IIa metal and at least one compound of a Group IIIa metal of the Periodic Table and can be produced from an aluminum nitride starting powder prepared by direct nitriding of metallic aluminum powder and having a purity of at least 99%, an oxygen content of lower than 1.8%, and an Si content of at most 1.0% by mixing the starting powder with powdery sintering additives consisting of at least one metal or compound of a Group IIa metal such as Ca and at least one metal or compound of a Group IIIa metal such as Y, shaping the powder mixture, and baking the shaped mixture at a relatively low temperature.

Abstract: A ceramic heater having a ceramic substrate, a heat-generating resistor disposed in the interior of the ceramic substrate or on the surface of the ceramic substrate and terminals connected to both the ends of the heat-generating resistor, wherein the ceramic substrate is composed of a sintered body of a nitride of an element selected from the group consisting of silicon and aluminum and the heat-generating resistor is composed of a ceramic layer containing titanium nitride (TiN) or tungsten carbide (WC).

Abstract: A process for the manufacture of an aluminum oxide or zirconium oxide fiber comprising fiberizing a liquid containing lactic acid and an oxidizable compound selected from basic aluminum chloride, zirconium acetate and zirconium oxychloride and the resulting fibers. The liquid optionally also contains colloidal silica.