Abstract: The magnetoresistance is measured for a magnetoresistive layered-structure, such as a spin valve film, prior to formation of an upper shield layer as well as patterning of a lower shield layer. The magnetic influence of the upper and lower shield layers can completely be eliminated during the measurement of the magnetoresistance. The magnetoresistive layered-structure is allowed to reliably receive the magnetic field over a wider range including a lower magnetic field range. It is accordingly possible to measure the magnetoresistance properly reflecting the magnetic characteristic of the magnetoresistive layered-structure. It is possible to find deficiency of a magnetoresistive read element at an earlier stage of the method.

Abstract: A magnetoresistive transducer includes a magnetoresistive (MR) film interposed between domain control layers along the surface of a lower non-magnetic gap layer. Lead layers are formed on the domain control layers. An upper non-magnetic gap layer and an upper shield layer are sequentially formed to extend over the MR film and the lead layers. The upper shield layer is opposed to the surfaces of the MR element and the lead layers at a flat boundary or interface. The residual magnetization is supposed to exist in the upper shield layer in the direction of the magnetization established in the domain control layers after the upper shield layer has been subjected to the applied magnetic field for the magnetization of the domain control layers. The residual magnetization can be kept continuous along the flat interface of the upper shield layer. Any magnetic poles are hardly generated along the interface of the upper shield layer.

Abstract: A magnetic head of a magnetoresistance type is provided. The magnetic head comprises a magnetoresistance film, an underlying layer formed on each of both sides of the magnetoresistance film, and a magnetic-domain regulating film formed on the underlying layer so as to regulate a magnetic domain of a free magnetic layer in the magnetoresistance film. The underlying layer has a laminated structure of a tungsten-(W)-group metal layer formed on a tantalum-(Ta)-group metal layer. The underlying layer is formed so thick as to arrange the magnetic-domain regulating film at a position corresponding to the free magnetic layer.

Abstract: A spiral flow is generated in an outermost surface of a filter layer 103a formed of floating filter media 103 housed inside a filtration tube 102. This spiral flow can carry out filtration of the wastewater while scraping off floating filter media 103 forming the outermost surface of the filter layer 103a. This spiral flow can also be generated by discharging the wastewater inside the filtration tube in a direction following an inner wall thereof. Moreover, the tornado flow can also be generated by sucking this spiral flow downward to obtain an even more effective prevention of the clogging of the filter layer 103a.

Abstract: The magnetoresistance is measured for a magnetoresistive layered-structure, such as a spin valve film, prior to formation of an upper shield layer as well as patterning of a lower shield layer. The magnetic influence of the upper and lower shield layers can completely be eliminated during the measurement of the magnetoresistance. The magnetoresistive layered-structure is allowed to reliably receive the magnetic field over a wider range including a lower magnetic field range. It is accordingly possible to measure the magnetoresistance properly reflecting the magnetic characteristic of the magnetoresistive layered-structure. It is possible to find deficiency of a magnetoresistive read element at an earlier stage of the method.

Abstract: A magnetic head of a magnetoresistance type is provided. The magnetic head comprises a magnetoresistance film, an underlying layer formed on each of both sides of the magnetoresistance film, and a magnetic-domain regulating film formed on the underlying layer so as to regulate a magnetic domain of a free magnetic layer in the magnetoresistance film. The underlying layer has a laminated structure of a tungsten-(W)-group metal layer formed on a tantalum-(Ta)-group metal layer. The underlying layer is formed so thick as to arrange the magnetic-domain regulating film at a position corresponding to the free magnetic layer.

Abstract: A magnetoresistive transducer includes a magnetoresistive (MR) film interposed between domain control layers along the surface of a lower non-magnetic gap layer. Lead layers are formed on the domain control layers. An upper non-magnetic gap layer and an upper shield layer are sequentially formed to extend over the MR film and the lead layers. The upper shield layer is opposed to the surfaces of the MR element and the lead layers at a flat boundary or interface. The residual magnetization is supposed to exist in the upper shield layer in the direction of the magnetization established in the domain control layers after the upper shield layer has been subjected to the applied magnetic field for the magnetization of the domain control layers. The residual magnetization can be kept continuous along the flat interface of the upper shield layer. Any magnetic poles are hardly generated along the interface of the upper shield layer.

Abstract: A method for manufacturing a spin valve GMR head is describe in which a fixed magnetic layer of the head may maintain magnetization in a desired orientation. In one aspect of the invention, the method comprises steps of: forming a magnetic film including at least a free magnetic layer, a non-magnetic metallic layer, a fixed magnetic layer, and a magnetic domain control layer; subjecting the magnetic film to a first heat treatment under a magnetic field to enhance magnetic anisotropy of the free magnetic layer; and subjecting the magnetic film to a second heat treatment under a magnetic field and at a higher temperature than the maximum temperature applied in the processes that precede the second heat treatment, to fix the magnetization in the fixed magnetic layer.

Abstract: A spin valve head comprises a spin valve film having at least a pinned magnetic layer, a nonmagnetic metal layer, and a free magnetic layaer. The spin valve head further comprises a hard magnetic layer for controlling magnetic domains of the free magnetic layer, and electrode elements for supplying a sense current to the spin valve film, wherein the hard magnetic layer and the free magnetic layer are positioned not to overlap an orthographic projection of the hard magnetic layer in a thickness direction of the spin valve film with an orthographic projection of the free magnetic layer in the thickness direction of the spin valve film. According to such configuration, a single magnetic domain structure which does not generate a reverse magnetic field region throughout the overall surface of the free magnetic layer can be obtained, so that the hysteresis phenomenon is not caused in the spin valve head output. Therefore, the output with no noise can be derived.

Abstract: A magnetoresistive head of the present invention is not easily damaged by electrostatic discharge, and is easy to manufacture. A magnetoresistance effect element is interposed between upper and lower shields composed of soft magnetic material through first and second gaps composed of an insulating material. The lower shield is connected to a slider via a slider protective film, which is an insulating substance. The magnetoresistive head is constructed so that a capacity Cg between the magnetoresistance effect element and the lower shield is 6.3 or more times a capacity between the lower shield and the slider by using a material (e.g., silicon carbide) exhibiting a large relative dielectric constant as, e.g., a second gap material.