Patents by Inventor Kenichiroh Abe

Kenichiroh Abe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming interlayer insulation film
    Patent number: 7402513
    Abstract: It is an object of the present invention to provide a method for forming an interlayer insulation film suppressing the occurrence of voids in the interlayer insulation film. A method for forming an interlayer insulation film of the present invention, comprising the steps of: (1) forming an etching stopper film of a silicon nitride film on an entire surface including a step part on a semiconductor substrate having the step part with an aspect ratio of ?3; (2) forming an interlayer insulation film of an impurity-doped silicate film on the silicon nitride film; and (3) performing reflow of the interlayer insulation film by a heat treatment, wherein the formation of the silicon nitride film is controlled such that the N—H bond density of the silicon nitride film is 1.0×1022 pieces/cm3 or less.
    Type: Grant
    Filed: January 12, 2005
    Date of Patent: July 22, 2008
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takanori Sonoda, Kazumasa Mitsumune, Kenichiroh Abe, Yushi Inoue, Tsukasa Doi
  • Method for forming interlayer insulation film
    Publication number: 20050159015
    Abstract: It is an object of the present invention to provide a method for forming an interlayer insulation film suppressing the occurrence of voids in the interlayer insulation film. A method for forming an interlayer insulation film of the present invention, comprising the steps of: (1) forming an etching stopper film of a silicon nitride film on an entire surface including a step part on a semiconductor substrate having the step part with an aspect ratio of ?3; (2) forming an interlayer insulation film of an impurity-doped silicate film on the silicon nitride film; and (3) performing reflow of the interlayer insulation film by a heat treatment, wherein the formation of the silicon nitride film is controlled such that the N—H bond density of the silicon nitride film is 1.0×1022 pieces/cm3 or less.
    Type: Application
    Filed: January 12, 2005
    Publication date: July 21, 2005
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Takanori Sonoda, Kazumasa Mitsumune, Kenichiroh Abe, Yushi Inoue, Tsukasa Doi