Patents by Inventor Kenj Fujiwara

Kenj Fujiwara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor element module and method for manufacturing the same
    Patent number: 8222724
    Abstract: An object is to provide a semiconductor element module having high reliability, superior electric connection and thermal connection and capable of securing sufficient cooling performance, and also to provide a method for manufacturing the same. The semiconductor element module (1) comprises an IGBT (2) and a diode (3) having electrodes formed on surfaces of both sides thereof, a ceramic substrate (7), in which thermal conductivity is high, having wiring circuit layers (4, 5) formed on the surface thereof for bonding to surfaces of one side of the IGBT (2) and the diode (3), a ceramic substrate (8), in which thermal conductivity is high, having a wiring circuit layer (6) formed on the surface thereof for bonding to surfaces of other side of the IGBT (2) and the diode (3), and a sealing member (11) which is sandwiched between the outer edges of the ceramic substrates (7, 8) for sealing inside thereof; and these members are bonded by room-temperature bonding.
    Type: Grant
    Filed: February 14, 2008
    Date of Patent: July 17, 2012
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Daishi Ueno, Taro Wada, Masahiro Funayama, Yoshikatsu Kuroda, Yuichi Kondo, Shinichi Kobayashi, Koji Nakano, Kenj Fujiwara, Teruo Takeshita
  • SEMICONDUCTOR ELEMENT MODULE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20110062600
    Abstract: An object is to provide a semiconductor element module having high reliability, superior electric connection and thermal connection and capable of securing sufficient cooling performance, and also to provide a method for manufacturing the same. The semiconductor element module (1) comprises an IGBT (2) and a diode (3) having electrodes formed on surfaces of both sides thereof, a ceramic substrate (7), in which thermal conductivity is high, having wiring circuit layers (4, 5) formed on the surface thereof for bonding to surfaces of one side of the IGBT (2) and the diode (3), a ceramic substrate (8), in which thermal conductivity is high, having a wiring circuit layer (6) formed on the surface thereof for bonding to surfaces of other side of the IGBT (2) and the diode (3), and a sealing member (11) which is sandwiched between the outer edges of the ceramic substrates (7, 8) for sealing inside thereof; and these members are bonded by room-temperature bonding.
    Type: Application
    Filed: February 14, 2008
    Publication date: March 17, 2011
    Inventors: Daishi Ueno, Taro Wada, Masahiro Funayama, Yoshikatsu Kuroda, Yuichi Kondo, Shinichi Kobayashi, Koji Nakano, Kenj Fujiwara, Teruo Takeshita