Abstract: There is provided a solid-state imaging device and an electronic apparatus that performs focus detection and image generation on objects of various shapes. A solid-state imaging device includes a pixel array in which multiple pixels are arrayed. The multiple pixels each receive light in a predetermined wavelength band. The pixel array includes at least one or more first pixels and at least one or more second pixels. The at least one or more first pixels each include a pair of sub-pixels provided beneath one microlens. The pair of sub-pixels is aligned in a first direction. The at least one or more second pixels each include a pair of sub-pixels provided beneath one microlens. The pair of sub-pixels is aligned in a second direction. The second direction is perpendicular to the first direction.

Abstract: [Overview] [Problem to be Solved] To provide a solid-state imaging device and an electronic apparatus that make it possible to perform focus detection and image generation on objects of various shapes. [Solution] A solid-state imaging device includes a pixel array in which multiple pixels are arrayed. The multiple pixels each receive light in a predetermined wavelength band. The pixel array includes at least one or more first pixels and at least one or more second pixels. The at least one or more first pixels each include a pair of sub-pixels provided beneath one microlens. The pair of sub-pixels is aligned in a first direction. The at least one or more second pixels each include a pair of sub-pixels provided beneath one microlens. The pair of sub-pixels is aligned in a second direction. The second direction is perpendicular to the first direction.

Abstract: The present technology relates to an optical sensor that can suppress a decrease in distance measurement accuracy without increasing power consumption, and an electronic device. The optical sensor includes: a TOF pixel that receives reflected light which is returned when irradiation light emitted from a light emitting unit is reflected on a subject; and a plurality of polarization pixels that respectively receives light beams of a plurality of polarization planes, the light beams being a part of light from the subject. The present technology can be applied to, for example, the cases where distance measurement is performed.

Abstract: The present technology relates to a solid-state imaging device that can achieve a higher resolution while increasing sensitivity. In a pixel array unit, pixels are formed with a combination of a first pixel that performs photoelectric conversion on light of a first color component with a first photoelectric conversion unit, and photoelectric conversion on light of a third color component with a second photoelectric conversion unit; a second pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and on light of a fifth color component with a second photoelectric conversion unit; and a third pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and on light of a sixth color component with a second photoelectric conversion unit. The first color component and the sixth color component are mixed, to generate white (W).

Abstract: The present technology relates to a solid-state imaging device that can achieve a higher resolution while increasing sensitivity. In a pixel array unit, pixels are formed with a combination of a first pixel that performs photoelectric conversion on light of a first color component with a first photoelectric conversion unit, and photoelectric conversion on light of a third color component with a second photoelectric conversion unit; a second pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and on light of a fifth color component with a second photoelectric conversion unit; and a third pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and on light of a sixth color component with a second photoelectric conversion unit. The first color component and the sixth color component are mixed, to generate white (W).

Abstract: The present technology relates to a solid-state imaging device that can achieve a higher resolution while increasing sensitivity, and an electronic apparatus.

Abstract: The present disclosure relates to a solid-state imaging device that can be made smaller in size, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes a photoelectric conversion film that performs photoelectric conversion of light emitted from the back surface side of the semiconductor substrate. Also, in each pixel, a charge accumulation layer is formed to be in contact with the photoelectric conversion film on the back surface of the semiconductor substrate, a transfer path unit is formed to extend from the charge accumulation layer to a point near the front surface of the semiconductor substrate, and a memory unit is disposed near the back surface side of the semiconductor substrate, with a charge transfer gate being interposed between the memory unit and the transfer path unit.

Abstract: The present technology relates to a solid-state imaging device that can achieve a higher resolution while increasing sensitivity, and an electronic apparatus.

Abstract: The present disclosure relates to a solid-state imaging device that can be made smaller in size, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes a photoelectric conversion film that performs photoelectric conversion of light emitted from the back surface side of the semiconductor substrate. Also, in each pixel, a charge accumulation layer is formed to be in contact with the photoelectric conversion film on the back surface of the semiconductor substrate, a transfer path unit is formed to extend from the charge accumulation layer to a point near the front surface of the semiconductor substrate, and a memory unit is disposed near the back surface side of the semiconductor substrate, with a charge transfer gate being interposed between the memory unit and the transfer path unit.

Abstract: By stably separating a melting location of a fuse (3) from conductive layers (5A, 5B), reliable melting of the fuse (3) is enabled. A fuse (3) including a fuse body (3A) and two pads (3Ba, 3Bb) connected by this and two conductive layers (5A, 5B) individually connected to the two pads (3Ba, 3Bb) are formed in a multilayer structure on a semiconductor substrate (1). A length of the fuse body (3A) is defined so that the melting location of the fuse (3) becomes positioned in the fuse body (3A) away from the region overlapped on the conductive layer (5A or 5B) when an electrical stress is applied between two conductive layers (5A, 5B) and the fuse (3) is melted.

Abstract: By stably separating a melting location of a fuse (3) from conductive layers (5A, 5B), reliable melting of the fuse (3) is enabled. A fuse (3) including a fuse body (3A) and two pads (3Ba, 3Bb) connected by this and two conductive layers (5A, 5B) individually connected to the two pads (3Ba, 3Bb) are formed in a multilayer structure on a semiconductor substrate (1). A length of the fuse body (3A) is defined so that the melting location of the fuse (3) becomes positioned in the fuse body (3A) away from the region overlapped on the conductive layer (5A or 5B) when an electrical stress is applied between two conductive layers (5A, 5B) and the fuse (3) is melted.