Patents by Inventor Kenji Esashika

Kenji Esashika has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 9165919
    Abstract: A semiconductor device that is equipped with an ESD protection element, which has a size increase thereof suppressed, does not require extra process, and can be formed without inducing deterioration of characteristics of the semiconductor device. This semiconductor device includes a semiconductor substrate, a circuit element, that includes a PN junction formed of a region, which is formed on the semiconductor substrate, and which has a conductivity type different from that of the substrate and a protection element for the circuit element. The protection element is a transistor formed of the region, another region having the conductivity type same as that of the region, and the semiconductor substrate. The emitter for the transistor and the semiconductor substrate are connected to each other.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: October 20, 2015
    Assignee: NEW JAPAN RADIO CO., LTD.
    Inventors: Hideaki Matsumoto, Jun Yamashita, Kenji Esashika, Takao Sugino
  • SEMICONDUCTOR DEVICE
    Publication number: 20150001590
    Abstract: A semiconductor device that is equipped with an ESD protection element, which has a size increase thereof suppressed, does not require extra process, and can be formed without inducing deterioration of characteristics of the semiconductor device. This semiconductor device includes a semiconductor substrate, a circuit element, that includes a PN junction formed of a region, which is formed on the semiconductor substrate, and which has a conductivity type different from that of the substrate and a protection element for the circuit element. The protection element is a transistor formed of the region, another region having the conductivity type same as that of the region, and the semiconductor substrate. The emitter for the transistor and the semiconductor substrate are connected to each other.
    Type: Application
    Filed: February 28, 2012
    Publication date: January 1, 2015
    Applicant: NEW JAPAN RADIO CO., LTD.
    Inventors: Hideaki Matsumoto, Jun Yamashita, Kenji Esashika, Takao Sugino