Abstract: A portable work tool includes: a housing; and a motor; and a restraining surface. The housing has an outer surface including a covered region that is covered with a soft layer and an uncovered region that is exposed to an outside. The covered region and the uncovered region define a boundary therebetween. The motor is accommodated in the housing. The restraining surface is disposed in proximity to the boundary and protrudes from the covered region.

Abstract: A communication apparatus is configured to include first and second cards, and a card-to-card link connecting the cards. Each card is communicably connected to another communication apparatus through a route connected to the card. One of the cards is determined to be a primary card that controls data transmission between the communication apparatus and another communication apparatus, and the other card is determined to be a secondary card controlled by the primary card. The primary card establishes a primary data-path for transmitting primary data, using one of the first and second routes connected to the primary card. The primary card further establishes a secondary data-path for transmitting secondary data, using the card-to-card link, the secondary card, and the other one of the first and second routes connected to the secondary card.

Abstract: A pneumatic tire tread having a reinforcing part on front surface side walls of a block to improve performance on ice while improving performance on snow, and a pneumatic tire having such a tread, wherein the difference G between a distance Rt measured from the tire axis of rotation to the outermost side of the upper surface of the block and a distance Re measured from the tire axis of rotation to two front surface edges is between 0.2 mm and 2.0 mm in a new article, the distance from the axis of rotation to any point in the region of the block upper surface excluding the front surface edge is greater than Re, and the distance between the portion at the outermost side of the reinforcing part measured in the radial direction and the front surface edge is no greater than 2.0 mm.

Abstract: A novel fine carbon fiber produced by vapor growth, in which a graphite-net plane consisting of carbon atoms alone forms a temple-bell-shaped structural unit including a closed head-top part and a body-part with an open lower-end, in which an angle ? formed by a generatrix of the body-part and a fiber axis is less than 15°, 2 to 30 of the temple-bell-shaped structural units are stacked sharing a central axis to form an aggregate, and the aggregates are connected head-to-tail with a distance to form a fiber. Fine short carbon fibers with excellent dispersibility can be obtained by shortening the fine carbon fiber.

Abstract: A credit and debit log analysis device includes a credit and debit log storage unit (11) that stores a history of credit to an account of a customer to be an analysis object and debit to the account as a credit and debit log, a calendar (15) that stores information on a date, a trend discovering unit (12) that discovers a trend of credit and debit based on the credit and debit log and the calendar, a trend storage unit (13) that stores the trend, a matching rule generating unit (14) that generates a matching rule based on the trend so as to detect credit and debit data contravening the trend, a matching rule storage unit (16) that stores the matching rule, a matching unit (17) that detects a premonition by comparing the credit and debit data and the matching rule, a premonition storage unit (18) that stores the premonition, and a presentation unit (19) that presents the premonition to a user.

Abstract: An ohmic electrode (6) of a silicon carbide semiconductor apparatus is fabricated by forming an ohmic metal film on a silicon carbide substrate (1) by sputtering a target including a mixture or an alloy having therein nickel, and a metal(s) reducing the magnetic permeability of nickel and producing a carbide, where compositional ratios of the mixture or alloy are adjusted to predetermined compositional ratios, and by executing heat treatment for the ohmic metal film to calcinate the ohmic metal film. Thus, the ohmic electrode (6) that is for the silicon carbide semiconductor apparatus and capable of improving the use efficiency of the target can be manufactured, whose film thickness is even and that does not peel off.

Abstract: The cellular telephone device includes a control unit that executes any one of a plurality of applications, and a storage unit that stores an execution count of an application executed by the execution unit. The control unit determines an application to be executed after terminating or suspending a predetermined application, based on the execution count stored in the storage unit.

Abstract: A p-type region, a p? type region, and a p+ type region are selectively disposed in a surface layer of a silicon carbide substrate base. The p-type region and the p? type region are disposed in a breakdown voltage structure portion that surrounds an active region. The p+ type region is disposed in the active region to make up a JBS structure. The p? type region surrounds the p-type region to make up a junction termination structure. A Schottky electrode forms a Schottky junction with an n-type silicon carbide epitaxial layer. The Schottky electrode overhangs an interlayer insulation film covering a portion of the p-type region and this overhanging portion acts as a field plate. The p+ type region has an acceptor concentration greater than or equal to a predetermined concentration and can make a forward surge current larger.

Abstract: A first metal layer (3) is formed on a back face of a silicon carbide substrate (1) to a degree such that the first metal layer (3) does not fully cover the back face of the silicon carbide substrate. Many holes (4) are formed on the back face of the silicon carbide substrate (1) by dry-etching the back face of the silicon carbide substrate (1) using the first metal layer (3) as a mask therefor. A second metal layer constituting an ohmic contact is formed on the first metal layer (3) and the back face of the silicon carbide substrate (1) including inner surfaces of the many holes (4).

Abstract: A silicon carbide epitaxial layer formed by a low concentration wide band gap semiconductor of a first conductivity type is formed on the surface of a silicon carbide substrate formed by a high concentration wide band gap semiconductor of the first conductivity type. A Schottky electrode is formed on the silicon carbide epitaxial layer. The interface between the Schottky electrode and the silicon carbide epitaxial layer is used as a Schottky interface. Plural impurity regions of a second conductivity type are disposed at predetermined intervals in a lateral direction, in the silicon carbide epitaxial layer, at a position in the lower portion of the Schottky electrode in the depth direction. Because of the shape of the impurity regions, any leak current can be suppressed without raising the ON-resistance.

Abstract: A P+ type region, a p-type region, and a P? type region are disposed in a surface layer of a silicon carbide substrate base and are disposed in a breakdown voltage structure portion surrounding an active region to make up an element structure of Schottky junction. The p? type region surrounds the P+ type region and the p-type region to form a junction termination structure. A Schottky electrode forms a Schottky junction with an n-type silicon carbide epitaxial layer. The Schottky electrode and an electrode pad have end portions positioned on the P+ type region and the end portion of the Schottky electrode is exposed from the end portion of the electrode pad. As a result, the region of the breakdown voltage structure portion can be made smaller while the active region can be made larger, and a semiconductor device is easily fabricated.

Abstract: P+ type regions and a p-type region are selectively disposed in a surface layer of a silicon carbide substrate base. The P+ type region is disposed in a breakdown voltage structure portion surrounding an active region. The P+ type region is disposed in the active region to make up a JBS structure. The p-type region surrounds the P+ type region to make up a junction termination (JTE) structure. A Schottky electrode forms a Schottky junction with an n-type silicon carbide epitaxial layer. The Schottky electrode overhangs an interlayer insulation film covering a portion of the P+ type region and the p-type region and this overhanging portion acts as a field plate. This enables the provision of a semiconductor device configured by using a wide band gap semiconductor capable of maintaining a high breakdown voltage with high reliability, and a method of fabricating thereof.

Abstract: A (000-1) C-plane of an n? type silicon carbide substrate having an off-angle ? in a <11-20> direction is defined as a principal plane, and a periphery of a portion of this principal surface layer defined as an alignment mark is selectively removed to leave the convex-shaped alignment mark. The alignment mark has a cross-like plane shape such that two rectangles having longitudinal dimensions tilted by 45 degrees relative to the <11-20> direction are orthogonal to each other. When a film thickness of a p? type epitaxial layer is Y; a width of the alignment mark parallel to the principal surface of the n? type silicon carbide substrate is X; and an off-angle of the n? type silicon carbide substrate is ?, an epitaxial layer is formed on an upper surface of the alignment mark such that Y?X·tan ? is satisfied.

Abstract: In a fabrication method of a silicon carbide semiconductor element including a drift layer playing a role of retaining a high withstand voltage on a front side of a semiconductor substrate of silicon carbide and including an ohmic electrode on a backside, dicing is added to form at least one dicing line in an element active region on a surface of the semiconductor substrate on a side opposite of the drift layer before forming the ohmic electrode on the backside of the semiconductor substrate. Thus, a silicon carbide semiconductor element and fabrication method thereof is provided such that even if the semiconductor substrate is made thinner to reduce the on-resistance, the strength of the substrate can be maintained and cracking of the wafer during wafer processing can be reduced.

Abstract: A first metal layer (3) is formed on a back face of a silicon carbide substrate (1) to a degree such that the first metal layer (3) does not fully cover the back face of the silicon carbide substrate. Many holes (4) are formed on the back face of the silicon carbide substrate (1) by dry-etching the back face of the silicon carbide substrate (1) using the first metal layer (3) as a mask therefor. A second metal layer constituting an ohmic contact is formed on the first metal layer (3) and the back face of the silicon carbide substrate (1) including inner surfaces of the many holes (4).

Abstract: Process (A) of preparing a silicon carbide substrate of a first conductivity type; process (B) of forming an epitaxial layer of the first conductivity type on one principal surface of the silicon carbide substrate; process (C) of forming on another principal surface of the silicon carbide substrate, a first metal layer; process (D) of heat treating the silicon carbide substrate after the process (C) to form an ohmic junction between the first metal layer and the other principal surface of the silicon carbide substrate, and a layer of a substance (10) highly cohesive with another metal on the first metal layer; and a process (E) of removing impurities and cleaning a surface of the first metal layer (8) on the other principal surface of the silicon carbide substrate (D), are performed. The heat treatment at process (D) is executed at a temperature of 1,100 degrees C. or more.

Abstract: An Ni2Si layer and a TiC layer formed by sintering after deposition of a thin layer including Ni and a thin layer including Ti on a silicon carbide substrate have a structure in which the TiC layer is precipitated on a surface of the Ni2Si layer. A multilayer thin film including a Ti layer as a first thin film and an Ni layer as a second thin film is formed on the TiC layer surface in the structure. A TiC-derived C composition ratio is set to 15% or more at an interface between the TiC layer and the Ti layer of the multilayer thin film. As a result, a silicon carbide semiconductor element can be provided without occurrence of peeling after wafer dicing and subsequent picking up by a dicing tape.

Abstract: A silicon carbide vertical MOSFET having low ON-resistance and high blocking voltage. A first deposition film of low concentration silicon carbide of a first conductivity type is formed on the surface of a high concentration silicon carbide substrate of a first conductivity type. Formed on the first deposition film is a second deposition film that includes a high concentration gate region of a second conductivity type, with a first region removed selectively. A third deposition film is formed on the second deposition film, which includes a second region that is wider than the selectively removed first region, a high concentration source region of a first conductivity type, and a low concentration gate region of a second conductivity type. A low concentration base region of a first conductivity type is formed in contact with the first deposition film in the first and second regions.

Abstract: When being triggered by a call setting request that has been made, dummy information that is different from information to be transmitted and is information used for creating a path on which encrypted communication is to be performed is generated. The path on which the encrypted communication is to be performed is established by using the generated dummy information. A responding process of responding to the call setting request is performed after the path on which the encrypted communication is to be performed has been established. Thus, in the case where information that is obtained after the responding process of responding to the call setting request is encrypted and transmitted, it is possible to transmit the information while maintaining the real-time characteristics of the information to be transmitted.

Abstract: A novel fine carbon fiber produced by vapor growth, in which a graphite-net plane consisting of carbon atoms alone forms a temple-bell-shaped structural unit including a closed head-top part and a body-part with an open lower-end, in which an angle ? formed by a generatrix of the body-part and a fiber axis is less than 15°, 2 to 30 of the temple-bell-shaped structural units are stacked sharing a central axis to form an aggregate, and the aggregates are connected head-to-tail with a distance to form a fiber. Fine short carbon fibers with excellent dispersibility can be obtained by shortening the fine carbon fiber.