Abstract: A polymer containing a structural unit including an aromatic hydroxy group bonded to a main chain, where the aromatic hydroxy group is protected by an acid-labile group represented by the following formula (ALU-1) and is deprotected by action of an acid to become alkali-soluble. This provides: a polymer that makes it possible to form a resist film with which it is possible to form a pattern having extremely high isolated space resolution, small LER, and excellent rectangularity, effects of development loading and residue defects being suppressed, and the pattern having etching resistance and suppressed pattern collapse in the produced resist pattern; a chemically amplified positive resist composition containing the polymer; a resist patterning process using the chemically amplified positive resist composition; and a mask blank including the chemically amplified positive resist composition.

Abstract: A chemically amplified positive resist composition is provided comprising a polymer comprising units containing a phenolic hydroxy group and units containing a phenolic hydroxy group protected with an acid labile group, in which a carbon atom neighboring the carbon atom to which the phenolic hydroxy group protected with an acid labile group is attached is substituted with a specific group. A resist pattern with a high resolution, reduced LER, rectangularity, minimized influence of develop loading, and few development residue defects can be formed.

Abstract: A chemically amplified positive resist composition comprising (A) a base polymer, (B) a photoacid generator, and (C) a quencher is provided. The base polymer (A) contains a polymer comprising phenolic hydroxy group-containing units, aromatic ring-containing units, and units containing a phenolic hydroxy group protected with an acid labile group. The photoacid generator (B) and the quencher (C) are present in a weight ratio (B)/(C) of less than 3/1. The resist composition exhibits a very high isolated-space resolution and forms a pattern with reduced LER, rectangularity, minimized influences of develop loading and residue defects.

Abstract: A photomask blank has a resist film which is obtained by coating a chemically amplified positive resist composition comprising a polymer comprising phenolic hydroxy-containing repeat units and repeat units having a carboxy group which is protected with an acid labile group in the form of a tertiary hydrocarbyl group having an electron attractive moiety and/or hydroxy-substituted phenyl moiety bonded to the tertiary carbon, and an organic solvent. The resist film is processed to form a pattern with a high resolution, reduced LER, improved rectangularity, and pattern fidelity.

Abstract: A chemically amplified positive resist composition is provided comprising a polymer comprising units containing a phenolic hydroxy group and units containing a carboxy group protected with an acid labile group. A resist pattern with a high resolution, reduced LER, rectangularity, and minimized influence of develop loading can be formed.

Abstract: A chemically amplified positive resist composition is provided comprising (A) an acid diffusion-controlling agent in the form of an onium salt compound having a specific phenoxide anion, (B) a polymer comprising specific repeat units and adapted to be decomposed under the action of acid to increase its solubility in alkaline developer, and (C) a photoacid generator. A resist pattern with a high resolution, reduced LER, and improved CDU is formed. Because of minimal defects, the resist pattern can be inspected with light of short wavelength 300-400 nm.

Abstract: A chemically amplified positive resist composition is provided comprising a base polymer which contains a polymer comprising a phenolic hydroxy group-containing unit, a unit containing a phenolic hydroxy group protected with an acid labile group, and a unit containing a carboxy group protected with an acid labile group. The aromatic ring-containing repeat units account for at least 65 mol % of the overall repeat units of the polymer. A resist pattern with a very high resolution, reduced LER, improved rectangularity, and minimized influence of develop loading can be formed.

Abstract: A chemically amplified resist composition contains (A) a polymer compound containing one or two or more kinds of repeating units, at least one kind of the repeating units is polymerized from a polymerizable monomer with not more than 1000 ppm of a residual oligomer in a form of dimer to hexamer. An object of the present invention is to provide: a chemically amplified resist composition capable of achieving favorable resolution, pattern profile, and line edge roughness, and simultaneously suppressing development-residue defect, which would otherwise cause mask defect; and a method for forming a resist pattern by using this composition.

Abstract: A chemically amplified positive resist composition is provided comprising a base polymer which contains a polymer comprising an acid generating unit, a phenolic hydroxy group-containing unit, a unit containing a phenolic hydroxy group protected with an acid labile group, and a unit containing a carboxy group protected with an acid labile group. A resist pattern with a high resolution, reduced LER, improved rectangularity, and minimized influence of develop loading can be formed.

Abstract: A negative resist composition comprising a base polymer comprising repeat units derived from a triple bond-containing maleimide compound is provided. A pattern with a high resolution and reduced edge roughness is formed therefrom.

Abstract: A polymer of a polyimide precursor which includes a structural unit represented by the following general formula (7), where X1 represents a tetravalent organic group, X2 represents a divalent organic group, and R1 represents a group represented by the following general formula (2), where the dotted line represents a bonding, Y1 represents an organic group with a valency of k+1, Rs represents a group containing at least one silicon atom, “k” represents 1, 2 or 3, and “n” represents 0 or 1.

Abstract: A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers under such illumination that the quantity of light of wavelength up to 400 nm is up to 0.05 mW/cm2. The polymer avoids photo-decomposition of the acid generator during polymerization and concomitant deprotection reaction of the acid labile group when used in positive resist compositions. A pattern with high dissolution contrast and rectangularity is formed after development.

Abstract: The present invention provides a tetracarboxylic acid diester compound represented by the following general formula (1), wherein, X1 represents a tetravalent organic group, and R1 represents a group represented by the following general formula (2), wherein, the dotted line represents a bonding, Y1 represents an organic group with a valency of k+1, Rs represents a group containing at least one silicon atom, “k” represents 1, 2 or 3, and “n” represents 0 or 1. There can be provided a tetracarboxylic acid diester compound which can lead a polymer of a polyimide precursor capable of using a base resin of a negative photosensitive resin composition which is capable of forming a fine pattern and giving high resolution, a polymer of a polyimide precursor obtained by using the tetracarboxylic acid diester compound and a method for producing the same.

Abstract: A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers in a solution of a non-polymerizable compound containing a nitrogen atom to which an acid labile group is bound. This prevents deprotection reaction of the acid labile group in the case of positive resist-forming polymer or crosslinking reaction in the case of negative resist-forming polymer.

Abstract: A polymer of a polyimide precursor which includes a structural unit represented by the following general formula (7), where X1 represents a tetravalent organic group, X2 represents a divalent organic group, and R1 represents a group represented by the following general formula (2), where the dotted line represents a bonding, Y1 represents an organic group with a valency of k+1, Rs represents a group containing at least one silicon atom, “k” represents 1, 2 or 3, and “n” represents 0 or 1.

Abstract: The present invention provides a tetracarboxylic acid diester compound represented by the following general formula (1), wherein, X1 represents a tetravalent organic group, and R1 represents a group represented by the following general formula (2), wherein, the dotted line represents a bonding, Y1 represents an organic group with a valency of k+1, Rs represents a group containing at least one silicon atom, “k” represents 1, 2 or 3, and “n” represents 0 or 1. There can be provided a tetracarboxylic acid diester compound which can lead a polymer of a polyimide precursor capable of using a base resin of a negative photosensitive resin composition which is capable of forming a fine pattern and giving high resolution, a polymer of a polyimide precursor obtained by using the tetracarboxylic acid diester compound and a method for producing the same.

Abstract: A positive resist composition is provided comprising (A) a resin comprising recurring units having adamantane ring and recurring units having cyclopentyl so that the resin may increase its alkali solubility under the action of acid, (B) a mixture of sulfonium salts, and (C) a solvent. By coating the resist composition as a resist film, forming a protective film thereon, and effecting immersion lithography, a pattern of good profile is formed at a high resolution.

Abstract: A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers under such illumination that the quantity of light of wavelength up to 400 nm is up to 0.05 mW/cm2. The polymer avoids photo-decomposition of the acid generator during polymerization and concomitant deprotection reaction of the acid labile group when used in positive resist compositions. A pattern with high dissolution contrast and rectangularity is formed after development.

Abstract: A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units having an acid labile group-substituted hydroxyl and/or carboxyl group in a C7-C16 ester or C8-C16 ketone solvent, baking the coating, and removing the excessive shrink agent via organic solvent development for thereby shrinking the size of spaces in the pattern.

Abstract: A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers in a solution of a non-polymerizable compound containing a nitrogen atom to which an acid labile group is bound. This prevents deprotection reaction of the acid labile group in the case of positive resist-forming polymer or crosslinking reaction in the case of negative resist-forming polymer.