Abstract: A technique that makes it possible to enhance the reliability of a module using PCB as its module substrate is provided. Solder connection of a single-chip component 43, an integrated chip component 44, and a semiconductor chip IC2 by Pb-free solder is carried out by heat treatment at a temperature below 280° C. using a heat block. Solder connection of a semiconductor chip IC1 by high-melting point solder is carried out by heat treatment at a temperature of 280° C. or higher using a hot jet. Thus, the semiconductor chip IC1 can be solder connected to PCB 38 using high-melting point solder without the following troubles: damage to the PCB 38 due to heat, for example, burning of solder resist; and peeling of prepreg from a core material. Therefore, the semiconductor chip IC1 can be mounted over the PCB 38 with high connection strength.

Abstract: A technique that makes it possible to enhance the reliability of a module using PCB as its module substrate is provided. Solder connection of a single-chip component 43, an integrated chip component 44, and a semiconductor chip IC2 by Pb-free solder is carried out by heat treatment at a temperature below 280° C. using a heat block. Solder connection of a semiconductor chip IC1 by high-melting point solder is carried out by heat treatment at a temperature of 280° C. or higher using a hot jet. Thus, the semiconductor chip IC1 can be solder connected to PCB 38 using high-melting point solder without the following troubles: damage to the PCB 38 due to heat, for example, burning of solder resist; and peeling of prepreg from a core material. Therefore, the semiconductor chip IC1 can be mounted over the PCB 38 with high connection strength.

Abstract: A technique that makes it possible to enhance the reliability of a module using PCB as its module substrate is provided. Solder connection of a single-chip component 43, an integrated chip component 44, and a semiconductor chip IC2 by Pb-free solder is carried out by heat treatment at a temperature below 280° C. using a heat block. Solder connection of a semiconductor chip IC1 by high-melting point solder is carried out by heat treatment at a temperature of 280° C. or higher using a hot jet. Thus, the semiconductor chip IC1 can be solder connected to PCB 38 using high-melting point solder without the following troubles: damage to the PCB 38 due to heat, for example, burning of solder resist; and peeling of prepreg from a core material. Therefore, the semiconductor chip IC1 can be mounted over the PCB 38 with high connection strength.

Abstract: The quality and reliability of a semiconductor device can be improved by eliminating a warp of a chip and performing a chip-stack. A wiring substrate, the first semiconductor chip connected via the first gold bump on the wiring substrate, the second semiconductor chip stacked via the second gold bump on the first semiconductor chip, and a sealing body are comprised. A first gold bump is connected to the wiring substrate, heating, and injection by pressure welding of the first gold bump is done under normal temperature after that at the hole-like electrode of the first semiconductor chip. Since injection by pressure welding of the second gold bump of the second semiconductor chip is done under normal temperature into the hole-like electrode of the first semiconductor chip and the second semiconductor chip is stacked, the chip-stack can be performed under normal temperature.

Abstract: A technique that makes it possible to enhance the reliability of a module using PCB as its module substrate is provided. Solder connection of a single-chip component 43, an integrated chip component 44, and a semiconductor chip IC2 by Pb-free solder is carried out by heat treatment at a temperature below 280° C. using a heat block. Solder connection of a semiconductor chip IC1 by high-melting point solder is carried out by heat treatment at a temperature of 280° C. or higher using a hot jet. Thus, the semiconductor chip IC1 can be solder connected to PCB 38 using high-melting point solder without the following troubles: damage to the PCB 38 due to heat, for example, burning of solder resist; and peeling of prepreg from a core material. Therefore, the semiconductor chip IC1 can be mounted over the PCB 38 with high connection strength.

Abstract: In a method of manufacturing a camera module having a CMOS image sensor, a semiconductor chip to serve as a light sensor is mounted on a optical-component-mounting face of a wiring substrate mother board and, after bonding wires are connected to the semiconductor chip, a lens barrel is joined to the wiring substrate mother board so as to cover the semiconductor chip. A position adjustment pin and a through hole are provided on the lens barrel and the wiring substrate mother board respectively outside a junction face between the lens barrel and the wiring substrate mother board to be used for adjusting the position of the lens barrel with respect to the wiring substrate mother board by inserting the position adjustment pin into the through hole.

Abstract: In a method of manufacturing a camera module having a CMOS image sensor, a semiconductor chip to serve as a light sensor is mounted on a optical-component-mounting face of a wiring substrate mother board and, after bonding wires are connected to the semiconductor chip, a lens barrel is joined to the wiring substrate mother board so as to cover the semiconductor chip. A position adjustment pin and a through hole are provided on the lens barrel and the wiring substrate mother board respectively outside a junction face between the lens barrel and the wiring substrate mother board to be used for adjusting the position of the lens barrel with respect to the wiring substrate mother board by inserting the position adjustment pin into the through hole.

Abstract: A technique that makes it possible to enhance the reliability of a module using PCB as its module substrate is provided. Solder connection of a single-chip component 43, an integrated chip component 44, and a semiconductor chip IC2 by Pb-free solder is carried out by heat treatment at a temperature below 280° C. using a heat block. Solder connection of a semiconductor chip IC1 by high-melting point solder is carried out by heat treatment at a temperature of 280° C. or higher using a hot jet. Thus, the semiconductor chip IC1 can be solder connected to PCB 38 using high-melting point solder without the following troubles: damage to the PCB 38 due to heat, for example, burning of solder resist; and peeling of prepreg from a core material. Therefore, the semiconductor chip IC1 can be mounted over the PCB 38 with high connection strength.

Abstract: A sensor chip and a lens mount accommodating therein the sensor chip are mounted on a surface of a wiring substrate and a lens holder accommodating a lens therein is coupled with the lens mount. On a rear surface of the wiring substrate, a logic chip, a memory chip and a passive component are mounted and they are sealed with a seal resin. An electrode pad of the sensor chip is electrically connected to an electrode on the surface of the wiring substrate via a bonding wire but a stud bump is also formed on the electrode at the surface of the wiring substrate and this stud bump is connected with the bonding wire. On the surface of the wiring substrate, a flexible substrate is bonded with an anisotropic conductive film and a bonding material. When a camera module is to be manufactured, the surface side of the wiring substrate is assembled after the rear surface side of the wiring substrate is assembled.

Abstract: A sensor chip and a lens mount accommodating therein the sensor chip are mounted on a surface of a wiring substrate and a lens holder accommodating a lens therein is coupled with the lens mount. On a rear surface of the wiring substrate, a logic chip, a memory chip and a passive component are mounted and they are sealed with a seal resin. An electrode pad of the sensor chip is electrically connected to an electrode on the surface of the wiring substrate via a bonding wire but a stud bump is also formed on the electrode at the surface of the wiring substrate and this stud bump is connected with the bonding wire. On the surface of the wiring substrate, a flexible substrate is bonded with an anisotropic conductive film and a bonding material. When a camera module is to be manufactured, the surface side of the wiring substrate is assembled after the rear surface side of the wiring substrate is assembled.

Abstract: The reliability and production yield of a solid state image sensing device is improved. Over a surface of a wiring substrate, a sensor chip and a lens-barrel having the sensor chip housed therein are mounted. To the lens-barrel, a lens holder for retaining a lens is connected. Over a back surface of the wiring substrate, a logic chip, a memory chip and a passive part are mounted, and they are sealed with a sealing resin. The lens-barrel and lens holder are each threaded. They are thermally welded while the threads are fitted to each other. The passive part is bonded to the wiring substrate via a Sn—Ag type Pb-free solder. After the wiring substrate is subjected to plasma washing treatment, the sensor chip is mounted over the wiring substrate and an electrode pad of the sensor chip and an electrode of the wiring substrate are electrically connected via a bonding wire.

Abstract: In a method of manufacturing a camera module having a CMOS image sensor, a semiconductor chip to serve as a light sensor is mounted on a optical-component-mounting face of a wiring substrate mother board and, after bonding wires are connected to the semiconductor chip, a lens barrel is joined to the wiring substrate mother board so as to cover the semiconductor chip. A position adjustment pin and a through hole are provided on the lens barrel and the wiring substrate mother board respectively outside a junction face between the lens barrel and the wiring substrate mother board to be used for adjusting the position of the lens barrel with respect to the wiring substrate mother board by inserting the position adjustment pin into the through hole.

Abstract: A sensor chip and a lens mount accommodating therein the sensor chip are mounted on a surface of a wiring substrate and a lens holder accommodating a lens therein is coupled with the lens mount. On a rear surface of the wiring substrate, a logic chip, a memory chip and a passive component are mounted and they are sealed with a seal resin. An electrode pad of the sensor chip is electrically connected to an electrode on the surface of the wiring substrate via a bonding wire but a stud bump is also formed on the electrode at the surface of the wiring substrate and this stud bump is connected with the bonding wire. On the surface of the wiring substrate, a flexible substrate is bonded with an anisotropic conductive film and a bonding material. When a camera module is to be manufactured, the surface side of the wiring substrate is assembled after the rear surface side of the wiring substrate is assembled.

Abstract: The junction strength between the external terminals and the wiring substrate of a semiconductor device is improved without creating a large size semiconductor device. In the outer periphery of the back surface of an interposer substrate 1Bi on which a semiconductor chip constructing a CSP type semiconductor device 1 is mounted, there are arranged a plurality of bump electrodes 1BB1 whose size in the direction intersecting the sides of the interposer substrate 1B1 is larger than that in the direction along the sides of the interposer substrate 1Bi.

Abstract: Disclosed herein is a semiconductor device in which a main surface of a semiconductor chip is placed over a first main surface of a wiring board so as to be opposed thereto and which includes a plurality of external terminals provided over a second main surface of the wiring board. The plurality of external terminals have a plurality of signal terminals and a plurality of power terminals. The signal terminals are arranged along the periphery of the wiring board and the power terminals are arranged along the inside of a row of the signal terminals. Chip capacitors are placed over the main surface of the semiconductor chip, which lies inside a row of the power terminals. The plurality of signal terminals and power terminals formed over the main surface of the semiconductor chip are connected to a plurality of wires formed over the wiring board respectively. The wiring board is provided with an opening or recess which extends therethrough. The chip capacitors are located within the opening or recess.