Patents by Inventor Kenji Hiroshige

Kenji Hiroshige has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radio frequency circuit with integrated elements and method of manufacture
    Patent number: 6044255
    Abstract: A radio frequency circuit is disclosed which includes a low-noise amplifier and a mixer integrated on the same semiconductor chip by using a silicon BiCMOS process. The low-noise amplifier has a silicon bipolar junction transistor and the mixer has a silicon MOS type field effect transistor. In the radio frequency circuit, the mixer can include two silicon MOS type field effect transistors one of which has a source connected to a drain of the other silicon MOS type field effect transistor and a gate of one silicon MOS type field effect transistor is supplied with a local signal and a gate of the other silicon MOS type field effect transistor is supplied with a radio frequency signal amplified by the low-noise amplifier.
    Type: Grant
    Filed: September 29, 1997
    Date of Patent: March 28, 2000
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Noriharu Suematsu, Masayoshi Ono, Tadashi Kawahara, Mikio Uesugi, Kenji Hiroshige, Yoshitada Iyama