Abstract: In a method for forming a Cu film, a CVD Cu film is formed on a CVD-Ru film that is formed on a wafer W. In the method, the wafer W having the CVD-Ru film is loaded into a chamber 1, and a film-forming source material in a vapor state is introduced into the chamber 1. The film-forming source material includes Cu(hfac)TMVS that is a Cu complex having a vapor pressure higher than that of Cu(hfac)2 produced as a by-product during the film formation. When the CVD-Cu film is formed, the pressure within the chamber 1 is controlled to a pressure at which the desorption and diffusion of Cu(hfac)2 adsorbed on the surface of the CVD Ru film proceed.

Abstract: A film-forming source material composed of a Cu complex is supplied to a wafer, which is kept at a relatively high first temperature and has a Ru film as a film-forming base film, and initial nuclei of Cu are formed on the wafer. Then, the film-forming source material composed of the Cu complex is supplied to the wafer kept at a relatively low second temperature, and Cu is deposited on the wafer having the initial nuclei of Cu formed thereon.

Abstract: In a method for forming a Cu film, a substrate is loaded in a processing chamber and a gaseous film-forming source material including monovalent amidinate copper and a gaseous reducing agent including a carboxylic acid are introduced into the processing chamber. Then, a Cu film is deposited on the substrate by reacting the film-forming source material and the reducing agent together on the substrate.

Abstract: In a method for forming a Cu film, a wafer (W) is loaded into a chamber 1. Then, Cu(hfac)TMVS as a monovalent Cu ?-diketone complex and a reducing agent for reducing Cu(hfac)TMVS are introduced into the chamber 1 in a vapor state. Thus, a Cu film is formed on the wafer (W) by CVD.

Abstract: In a method for forming a Cu film, a CVD Cu film is formed on a CVD-Ru film that is formed on a wafer W. In the method, the wafer W having the CVD-Ru film is loaded into a chamber 1, and a film-forming source material in a vapor state is introduced into the chamber 1. The film-forming source material includes Cu(hfac)TMVS that is a Cu complex having a vapor pressure higher than that of Cu(hfac)2 produced as a by-product during the film formation. When the CVD-Cu film is formed, the pressure within the chamber 1 is controlled to a pressure at which the desorption and diffusion of Cu(hfac)2 adsorbed on the surface of the CVD Ru film proceed.