Patents by Inventor Kenji Hommyo

Kenji Hommyo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Heterojunction type compound semiconductor field effect transistor and its manufacturing method
    Patent number: 6936870
    Abstract: A heterojunction type compound semiconductor field effect transistor includes a channel layer, a first electron supply layer, an electric field strength reducing layer, a first contact layer, a recess stopper layer, and a second contact layer sequentially stacked on a compound semiconductor substrate. This transistor has a double recess structure. The first contact layer is composed of GaAs or InGaAs doped with n type impurities with a high electron mobility. The electric field strength reducing layer is composed of intrinsic InGaP.
    Type: Grant
    Filed: December 9, 2003
    Date of Patent: August 30, 2005
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuya Nishihori, Masanori Ochi, Takao Noda, Yoshitomo Sagae, Kenji Hommyo
  • Heterojunction type compound semiconductor field effect transistor and its manufacturing method
    Publication number: 20040164317
    Abstract: A heterojunction type compound semiconductor field effect transistor includes a channel layer, a first electron supply layer, an electric field strength reducing layer, a first contact layer, a recess stopper layer, and a second contact layer sequentially stacked on a compound semiconductor substrate. This transistor has a double recess structure. The first contact layer is composed of GaAs or InGaAs doped with n type impurities with a high electron mobility. The electric field strength reducing layer is composed of intrinsic InGaP.
    Type: Application
    Filed: December 9, 2003
    Publication date: August 26, 2004
    Inventors: Kazuya Nishihori, Masanori Ochi, Takao Noda, Yoshitomo Sagae, Kenji Hommyo