Abstract: In a first aspect of the present inventive subject matter, a lighting device includes a light-emitting device 1 including p-contact and n-contact that are separately arranged from each other on a first surface of the light-emitting element and a phosphor layer including a phosphor particle and covering the light-emitting element 1 except the p-contact and n-contact of the light-emitting element, the phosphor layer includes a higher density of the phosphor particle on a position of the first surface between the p-contact and the n-contact of the light-emitting element than on a position of a second surface that is an opposite surface of the first surface 1b of the light-emitting element.

Abstract: Provided is an LED device which is compact while having good luminous efficiency and a focused light distribution. This LED device is provided with: a reflective frame around the outer periphery of the LED device; an LED die which has a transparent insulating substrate, a semiconductor layer formed on the bottom surface of the transparent insulating substrate, and an outer connection electrode disposed on the semiconductor layer; and a fluorescent member which is disposed on at least the top surface of the LED die and which converts the wavelength of the light emitted from the LED die. On the inside of the reflective frame is an inclined surface in contact with the lateral surface of the fluorescent member, and the inclined surface is formed such that the inner diameter of the reflective frame widens from the bottom surface towards the top surface of the LED die. Also provided is a manufacturing method of the LED device.

Abstract: The purpose of the present invention is to provide a double-sided light emitting type semiconductor light emitting device that can be easily fabricated even if a semiconductor light emitting element is flip-chip mounted, and to provide a fabrication process for the same. The semiconductor light emitting device has a plurality of lead frames, a plurality of semiconductor light emitting elements connected to the plurality of lead frames, and a covering member that covers the plurality of semiconductor light emitting elements. The semiconductor light emitting device is characterized in that the edge of one lead frame among the plurality of lead frames is disposed in close proximity to the edge of another lead frame so as to form a gap, and the plurality of semiconductor light emitting elements are flip-chip mounted on the front surface and rear surface of the one lead frame and the other lead frame so as to straddle the gap.

Abstract: A method for manufacturing a semiconductor light emitting device comprises steps of: arraying semiconductor light emitting elements on an adhesive sheet so that electrodes of the semiconductor light emitting elements face the adhesive sheet; forming a wafer thereof by filling spaces between side surfaces of the semiconductor light emitting elements arrayed on the adhesive sheet with a resin and curing the resin; peeling the adhesive sheet from the wafer; overlaying the wafer on a substrate from which numerous substrates can be obtained by subdivision into individual pieces and the electrodes of the semiconductor light emitting elements and electrodes formed on the large circuit substrate are joined; and subdividing the large circuit substrate, to which the wafer has been joined, into individual semiconductor light emitting devices so that the planar size of the semiconductor light emitting element and that of the circuit substrate are roughly equal.

Abstract: Provided is an LED device which is compact while having good luminous efficiency and a focused light distribution. This LED device is provided with: a reflective frame around the outer periphery of the LED device; an LED die which has a transparent insulating substrate, a semiconductor layer formed on the bottom surface of the transparent insulating substrate, and an outer connection electrode disposed on the semiconductor layer; and a fluorescent member which is disposed on at least the top surface of the LED die and which converts the wavelength of the light emitted from the LED die. On the inside of the reflective frame is an inclined surface in contact with the lateral surface of the fluorescent member, and the inclined surface is formed such that the inner diameter of the reflective frame widens from the bottom surface towards the top surface of the LED die. Also provided is a manufacturing method of the LED device.

Abstract: An object of the invention is to provide an LED light source device and a manufacturing method for the same that can maintain high reflectance over an extended period of time notwithstanding the interaction between light and heat. More specifically, the invention provides an LED light source device that includes a substrate, an electrode formed on the substrate, a white inorganic resist layer deposited over the substrate so as to cover a surface thereof everywhere except where the electrode is formed, and an LED element connected to the electrode, wherein the white inorganic resist layer contains fine white inorganic particles dispersed or mixed into an inorganic binder, and a method for manufacturing such an LED light source device.

Abstract: In a first aspect of the present inventive subject matter, a lighting device includes a light-emitting device 1 including p-contact and n-contact that are separately arranged from each other on a first surface of the light-emitting element and a phosphor layer including a phosphor particle and covering the light-emitting element 1 except the p-contact and n-contact of the light-emitting element, the phosphor layer includes a higher density of the phosphor particle on a position of the first surface between the p-contact and the n-contact of the light-emitting element than on a position of a second surface that is an opposite surface of the first surface 1b of the light-emitting element.

Abstract: A method for manufacturing a semiconductor light emitting device comprises step of: arraying semiconductor light emitting elements on an adhesive sheet so that electrodes of the semiconductor light emitting elements face the adhesive sheet; forming a wafer thereof by filling spaces between side surfaces of the semiconductor light emitting elements arrayed on the adhesive sheet with a resin and curing the resin; peeling the adhesive sheet from the wafer; overlaying the wafer on a substrate from which numerous substrates can be obtained by subdivision into individual pieces and the electrodes of the semiconductor light emitting elements and electrodes formed on the large circuit substrate are joined; and subdividing the large circuit substrate, to which the wafer has been joined, into individual semiconductor light emitting devices so that the planar size of the semiconductor light emitting element and that of the circuit substrate are roughly equal.

Abstract: The purpose of the present invention is to provide a double-sided light emitting type semiconductor light emitting device that can be easily fabricated even if a semiconductor light emitting element is flip-chip mounted, and to provide a fabrication process for the same. The semiconductor light emitting device has a plurality of lead frames, a plurality of semiconductor light emitting elements connected to the plurality of lead frames, and a covering member that covers the plurality of semiconductor light emitting elements. The semiconductor light emitting device is characterized in that the edge of one lead frame among the plurality of lead frames is disposed in close proximity to the edge of another lead frame so as to form a gap, and the plurality of semiconductor light emitting elements are flip-chip mounted on the front surface and rear surface of the one lead frame and the other lead frame so as to straddle the gap.

Abstract: It is an object to produce a thin light-emitting device in an extremely simple method that does not include a substrate on which a light-emitting element is to be mounted.

Abstract: An object of the invention is to provide an LED light source device and a manufacturing method for the same that can maintain high reflectance over an extended period of time notwithstanding the interaction between light and heat. More specifically, the invention provides an LED light source device that includes a substrate, an electrode formed on the substrate, a white inorganic resist layer deposited over the substrate so as to cover a surface thereof everywhere except where the electrode is formed, and an LED element connected to the electrode, wherein the white inorganic resist layer contains fine white inorganic particles dispersed or mixed into an inorganic binder, and a method for manufacturing such an LED light source device.

Abstract: It is an object to produce a thin light-emitting device in an extremely simple method that does not include a substrate on which a light-emitting element is to be mounted.