Patents by Inventor Kenji Iso

Kenji Iso has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8278128
    Abstract: An off-axis cut of a nonpolar III-nitride wafer towards a polar (?c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5° angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0.9) than any other examined angles for off-axis cuts between 0° and 27°.
    Type: Grant
    Filed: February 2, 2009
    Date of Patent: October 2, 2012
    Assignee: The Regents of the University of California
    Inventors: Hisashi Masui, Hisashi Yamada, Kenji Iso, Asako Hirai, Makoto Saito, James S. Speck, Shuji Nakamura, Steven P. DenBaars
  • Publication number: 20120175739
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an ?-axis direction comprising a 0.15° or greater miscut angle towards the ?-axis direction and a less than 30° miscut angle towards the ?-axis direction.
    Type: Application
    Filed: March 22, 2012
    Publication date: July 12, 2012
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Asako HIRAI, Zhongyuan JIA, Makoto SAITO, Hisashi YAMADA, Kenji ISO, Steven P. DENBAARS, Shuji NAKAMURA, James S. SPECK
  • Patent number: 8158497
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.
    Type: Grant
    Filed: June 16, 2008
    Date of Patent: April 17, 2012
    Assignee: The Regents of the University of California
    Inventors: Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso, Steven P. DenBaars, Shuji Nakamura, James S. Speck
  • Publication number: 20120056158
    Abstract: An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.
    Type: Application
    Filed: November 15, 2011
    Publication date: March 8, 2012
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Kenji Iso, Hirokuni Asamizu, Makoto Saito, Hitoshi Sato, Steven P. DenBaars, Shuji Nakamura
  • Publication number: 20120049158
    Abstract: An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ratios should be higher than 0.7 at wavelengths longer than 470 nm.
    Type: Application
    Filed: September 28, 2011
    Publication date: March 1, 2012
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: HISASHI MASUI, HISASHI YAMADA, KENJI ISO, JAMES S. SPECK, SHUJI NAKAMURA, STEVEN P. DENBAARS
  • Patent number: 8124991
    Abstract: An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.
    Type: Grant
    Filed: July 28, 2008
    Date of Patent: February 28, 2012
    Assignee: The Regents of the University of California
    Inventors: Kenji Iso, Hirokuni Asamizu, Makoto Saito, Hitoshi Sato, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 8044417
    Abstract: An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ratios should be higher than 0.7 at wavelengths longer than 470 nm.
    Type: Grant
    Filed: February 2, 2009
    Date of Patent: October 25, 2011
    Assignee: The Regents of the University of California
    Inventors: Hisashi Masui, Hisashi Yamada, Kenji Iso, James S. Speck, Shuji Nakamura, Steven P. DenBaars
  • Publication number: 20110237054
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the <000-1> direction is 0.75° or greater miscut and less than 27° miscut towards the <000-1> direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.
    Type: Application
    Filed: June 3, 2011
    Publication date: September 29, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Kenji Iso, Hisashi Yamada, Makoto Saito, Asako Hirai, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Publication number: 20110180001
    Abstract: [Summary] [Problem] Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor including: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gases from the central portion of the reactor toward the peripheral portion of the reactor; and a reacted gas-discharging portion. Even when crystal growth is conducted on the surfaces of a large number of large-aperture substrates, the vapor phase epitaxy apparatus can eject each raw material gas at an equal flow rate for any angle, and can suppress the decomposition and crystallization of the raw material gases on the opposite face of the susceptor.
    Type: Application
    Filed: January 26, 2011
    Publication date: July 28, 2011
    Inventors: Kenji ISO, Yoshiyasu Ishihama, Ryohei Takaki, Yuzuru Takahashi
  • Publication number: 20110057166
    Abstract: A III-nitride film, grown on an m-plane substrate, includes multiple quantum wells (MQWs) with a barrier thickness of 27.5 nm or greater and a well thickness of 8 nm or greater. An emission wavelength can be controlled by selecting the barrier thickness of the MQWs. Device fabricated using the III-nitride film include nonpolar III-nitride light emitting diodes (LEDs) with a long wavelength emission.
    Type: Application
    Filed: November 15, 2010
    Publication date: March 10, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Hisashi Yamada, Kenji Iso, Shuji Nakamura
  • Publication number: 20100307418
    Abstract: Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor capable of improving the uniformity of the film thickness distribution, and reaction rate, of a semiconductor. The vapor phase epitaxy apparatus of a group III nitride semiconductor includes: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gas to the reactor; and a reacted gas-discharging portion. In the vapor phase epitaxy apparatus of a group III nitride semiconductor, the raw material gas-introducing portion includes a first mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing three kinds, i.e.
    Type: Application
    Filed: June 1, 2010
    Publication date: December 9, 2010
    Inventors: Kenji ISO, Yoshiyasu ISHIHAMA, Ryohei TAKAKI, Yuzuru TAKAHASHI
  • Patent number: 7847280
    Abstract: A III-nitride film, grown on an m-plane substrate, includes multiple quantum wells (MQWs) with a barrier thickness of 27.5 nm or greater and a well thickness of 8 nm or greater. An emission wavelength can be controlled by selecting the barrier thickness of the MQWs. Device fabricated using the III-nitride film include nonpolar III-nitride light emitting diodes (LEDs) with a long wavelength emission.
    Type: Grant
    Filed: August 8, 2008
    Date of Patent: December 7, 2010
    Assignee: The Regents of the University of California
    Inventors: Hisashi Yamada, Kenji Iso, Shuji Nakamura
  • Publication number: 20100229794
    Abstract: Provided is a vapor phase epitaxy apparatus for a III nitride semiconductor, including a susceptor for holding a substrate, an opposite face of the susceptor, a heater for heating the substrate, a raw material gas-introducing portion provided at the central portion of the susceptor, and a reactor formed of a gap between the susceptor and the opposite face of the susceptor, in which a distance between the installed substrate and the opposite face of the susceptor is extremely narrow, and a constitution through which a coolant is flown is provided for the opposite face of the susceptor. The vapor phase epitaxy apparatus further includes, on the opposite face of the susceptor, a fine porous portion for ejecting an inert gas toward the inside of the reactor and a constitution for supplying the inert gas to the fine porous portion.
    Type: Application
    Filed: February 26, 2010
    Publication date: September 16, 2010
    Inventors: Kenji ISO, Yoshiyasu Ishihama, Ryohei Takaki, Yuzuru Takahashi
  • Publication number: 20100052008
    Abstract: An off-axis cut of a nonpolar III-nitride wafer towards a polar (?c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5° angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0.9) than any other examined angles for off-axis cuts between 0 and 27°.
    Type: Application
    Filed: February 2, 2009
    Publication date: March 4, 2010
    Applicant: The Regents of the University of California
    Inventors: Hisashi Masui, Hisashi Yamada, Kenji Iso, Asako Hirai, Makoto Saito, James S. Speck, Shuji Nakamura, Steven P. DenBaars
  • Publication number: 20090194761
    Abstract: An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ratios should be higher than 0.7 at wavelengths longer than 470 nm.
    Type: Application
    Filed: February 2, 2009
    Publication date: August 6, 2009
    Applicant: The Regents of the University of California
    Inventors: Hisashi Masui, Hisashi Yamada, Kenji Iso, James S. Speck, Shuji Nakamura, Steven P. DenBaars
  • Publication number: 20090141502
    Abstract: A gallium nitride (GaN) based light emitting device, wherein the device comprises a first surface and a second surface, and the first surface and second surface are separated by a thickness of less than 100 micrometers, and preferably less than 20 micrometers. The first surface may be roughened or textured. A silver or silver alloy may be deposited on the second surface. The second surface of the device may be bonded to a permanent substrate.
    Type: Application
    Filed: December 1, 2008
    Publication date: June 4, 2009
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Junichi Sonoda, Shuji Nakamura, Kenji Iso, Steven P. DenBaars, Makoto Saito
  • Publication number: 20090039367
    Abstract: An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.
    Type: Application
    Filed: July 28, 2008
    Publication date: February 12, 2009
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Kenji Iso, Hirokuni Asamizu, Makoto Saito, Hitoshi Sato, Steven P. DenBaars, Shuji Nakamura
  • Publication number: 20090039339
    Abstract: A III-nitride film, grown on an m-plane substrate, includes multiple quantum wells (MQWs) with a barrier thickness of 27.5 nm or greater and a well thickness of 8 nm or greater. An emission wavelength can be controlled by selecting the barrier thickness of the MQWs. Device fabricated using the III-nitride film include nonpolar III-nitride light emitting diodes (LEDs) with a long wavelength emission.
    Type: Application
    Filed: August 8, 2008
    Publication date: February 12, 2009
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Hisashi Yamada, Kenji Iso, Shuji Nakamura
  • Publication number: 20090039356
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the <000-1> direction is 0.75° or greater miscut and less than 27° miscut towards the <000-1> direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.
    Type: Application
    Filed: August 8, 2008
    Publication date: February 12, 2009
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Kenji Iso, Hisashi Yamada, Makoto Saito, Asako Hirai, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Publication number: 20080308907
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.
    Type: Application
    Filed: June 16, 2008
    Publication date: December 18, 2008
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso, Steven P. DenBaars, Shuji Nakamura, James S. Speck