Abstract: A Schottky-barrier junction element 1 has a Schottky-barrier junction between an organic semiconductor 3 and an organic conductor 4. The inorganic semiconductor 3 is any one of nitride semiconductors, Si, GaAs, CdS, CdTe, CuInGaSe, InSb, PbTe, PbS, Ge, InN, GaSb, and SiC. A solar cell uses this Schottky-barrier junction element 1, with its photoelectric conversion section including the Schottky junction. A photoelectric conversion element uses this Schottky-barrier junction element 1, with its conversion section for interconverting light and electricity including the Schottky junction.

Abstract: To provide a method of making a film of organic material excellent in moisture barrier property and/or oxygen barrier property and also to provide an electronic device excellent in long term stability, in which the film obtained by such film making method is utilized to form a protective film for protecting an electronic device, and particularly an organic electronic device, to avoid deterioration of the performance, which would otherwise be brought about by moisture and oxygen in the atmosphere. The film is formed by depositing and solidifying, on a substrate, an evaporant formed by irradiating a liquid crystal polymer capable of exhibiting an optical anisotropy with pulsed laser.

Abstract: A substrate having organic thin film capable of growing two dimensionally such organic thin film as C60 and a transistor using the same are constituted with a substrate (1) having organic thin film by sequentially depositing a buffer layer (3) and organic thin film (4) on the substrate (2), and with the buffer layer orienting the organic thin film (4). A layer easily oriented with the substrate (2) and the buffer layer (3) may be inserted between the substrate (2) and the buffer layer (3). A sapphire substrate as the substrate (2), pentacene or pentacene fluoride as the buffer layer (3), and C60 or rubrene as the organic thin film (4) may be used, thereby C60 or rubrene two dimensional thin film of high quality can be obtained. By using such a substrate (1) having organic thin film, a field effect transistor of high quality can be realized.

Abstract: A substrate having organic thin film capable of growing two dimensionally such organic thin film as C60 and a transistor using the same are constituted with a substrate (1) having organic thin film by sequentially depositing a buffer layer (3) and organic thin film (4) on the substrate (2), and with the buffer layer orienting the organic thin film (4). A layer easily oriented with the substrate (2) and the buffer layer (3) may be inserted between the substrate (2) and the buffer layer (3). A sapphire substrate as the substrate (2), pentacene or pentacene fluoride as the buffer layer (3), and C60 or rubrene as the organic thin film (4) may be used, thereby C60 or rubrene two dimensional thin film of high quality can be obtained. By using such a substrate (1) having organic thin film, a field effect transistor of high quality can be realized.

Abstract: To provide a method of making a film of organic material excellent in moisture barrier property and/or oxygen barrier property and also to provide an electronic device excellent in long term stability, in which the film obtained by such film making method is utilized to form a protective film for protecting an electronic device, and particularly an organic electronic device, to avoid deterioration of the performance, which would otherwise be brought about by moisture and oxygen in the atmosphere. The film is formed by depositing and solidifying, on a substrate, an evaporant formed by irradiating a liquid crystal polymer capable of exhibiting an optical anisotropy with pulsed laser.

Abstract: A method and device for measuring thermoelectric characteristics of a combinatorial sample. The method and device are useful for rapid sample evaluation, the investigation of thermoelectric materials, and the carrier control of semiconductors. The device includes combinatorial samples patterned with a metal mask, a pair of sample holders for applying a small temperature gradient to the sample, a thermocouple for measuring the temperature gradient, and a probe pin array in contact with the sample.

Abstract: The present invention provides a method and device for measuring thermoelectric characteristics of a combinatorial sample, wherein the method and device are useful for rapid sample evaluation, the investigation of thermoelectric materials, and the carrier control of semiconductors.