Abstract: According to an embodiment, a semiconductor device includes a first electrically conductive portion, a first semiconductor chip of a reverse-conducting insulated gate bipolar transistor, a second electrically conductive portion, a third electrically conductive portion, a second semiconductor chip of an insulated gate bipolar transistor, and a fourth electrically conductive portion. The first semiconductor chip includes a first electrode and a second electrode. The first electrode is electrically connected to the first electrically conductive portion. The second electrically conductive portion is electrically connected to the second electrode. The third electrically conductive portion is electrically connected to the first electrically conductive portion. The second semiconductor chip includes a third electrode and a fourth electrode. The third electrode is electrically connected to the third electrically conductive portion.

Abstract: According to an embodiment, a semiconductor device includes a first electrically conductive portion, a first semiconductor chip of a reverse-conducting insulated gate bipolar transistor, a second electrically conductive portion, a third electrically conductive portion, a second semiconductor chip of an insulated gate bipolar transistor, and a fourth electrically conductive portion. The first semiconductor chip includes a first electrode and a second electrode. The first electrode is electrically connected to the first electrically conductive portion. The second electrically conductive portion is electrically connected to the second electrode. The third electrically conductive portion is electrically connected to the first electrically conductive portion. The second semiconductor chip includes a third electrode and a fourth electrode. The third electrode is electrically connected to the third electrically conductive portion.

Abstract: According to an embodiment, a semiconductor device includes a first electrically conductive portion, a first semiconductor chip of a reverse-conducting insulated gate bipolar transistor, a second electrically conductive portion, a third electrically conductive portion, a second semiconductor chip of an insulated gate bipolar transistor, and a fourth electrically conductive portion. The first semiconductor chip includes a first electrode and a second electrode. The first electrode is electrically connected to the first electrically conductive portion. The second electrically conductive portion is electrically connected to the second electrode. The third electrically conductive portion is electrically connected to the first electrically conductive portion. The second semiconductor chip includes a third electrode and a fourth electrode. The third electrode is electrically connected to the third electrically conductive portion.

Abstract: According to an embodiment, a semiconductor device includes a first electrically conductive portion, a first semiconductor chip of a reverse-conducting insulated gate bipolar transistor, a second electrically conductive portion, a third electrically conductive portion, a second semiconductor chip of an insulated gate bipolar transistor, and a fourth electrically conductive portion. The first semiconductor chip includes a first electrode and a second electrode. The first electrode is electrically connected to the first electrically conductive portion. The second electrically conductive portion is electrically connected to the second electrode. The third electrically conductive portion is electrically connected to the first electrically conductive portion. The second semiconductor chip includes a third electrode and a fourth electrode. The third electrode is electrically connected to the third electrically conductive portion.

Abstract: A desired offset value is set and difference between this offset value and touch data is obtained. A touch response control is performed in either of positive and negative directions. This difference data may be changed and adjusted by a desired touch sensitivity parameter. In a case where data used for a tone control is transferred from suitable reference data to control data corresponding to touch data, following interpolation from the reference data to the control data is made and a tone control is made in response to data obtained by this interpolation. In this case, coefficients for the following interpolation are caused to change gradually so that tone control data obtained by the interpolation will change smoothly. An abrupt change in a tone control signal thereby can be prevented and a touch response control which is not accompanied by unnaturalness can be realized.

Abstract: In a control waveform generator for an electronic musical instrument of the type wherein the generator generates a control waveform adapted to control at least one of a tone pitch, a tone color and a tone volume, the control waveform generator is constituted by a pulse generator for generating a pulse signal having a repetitive frequency, and a detector including a counter which starts to count the number of the pulse signals when a key is depressed. The detector generates a first detection signal during an interval between depression of the key and a time at which a counter reaches a predetermined value and then produces a second detection signal until the depressed key is released.

Abstract: A plurality of tone signals corresponding to one note and having the same fundamental frequency and different harmonic components are modified in amplitude according to the shape of an envelope signal generated upon key depression and having an amplitude proportional to the key depression speed. One of the amplitude-modified tone signals is clipped at a predetermined level and then mixed with another amplitude-modified tone signal. The frequency spectrum of the resultant tone signal varies with time like a piano.