Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming, on a substrate, protruding portions with first films on the surfaces thereof, respectively, forming a second film different from the first films so as to fill a depressed portion between the protruding portions and to cover the protruding portions, processing in such a manner that the top surface of the second film on the depressed portion is higher than the top surface of the second film on the protruding portions after forming the second film to cover the protruding portions, and polishing the second film on the depressed and protruding portions to expose the first films.

Abstract: According to one embodiment, there is provided a template cleaning method. The method includes cleaning a template with a pattern formed on a surface, by using an acid or alkali. The method includes cleaning the template by using a cleaning liquid. The method includes rinsing the template by using a rinse liquid. The method includes performing an ashing process to the surface of the template by using a process gas. The cleaning liquid contains at least an auxiliary agent and a pH adjuster. The auxiliary agent contains grains made of a material that contains an organic substance as a main component.

Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes using a slurry containing a cationic water-soluble polymer (A), iron nitrate (B), and abrasive grains (C) to chemically and mechanically polish a film to be polished. The film includes an insulating film provided with a groove or a hole, and a tungsten film to fill the groove or the hole. The chemical mechanical polishing includes a first polishing process to polish the tungsten film, and a second polishing process to polish the tungsten film and the insulating film together. The second polishing process is conducted after the first polishing process. The content of the (A) component in the slurry used in the second polishing process is less than 300 ppm, and the content of the (B) component is 100 ppm or less.

Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes: respectively forming a first layer and a second layer at the top of a protruding portion and at the bottom of a depressed portion of a treatment target having protrusions/depressions in such a manner that sidewalls of the protruding portion is exposed, supplying a treatment liquid to the treatment target having the first layer and the second layer, bringing a catalyst into contact with or closer to the first layer and thereby increasing the dissolution rate of the first layer in dissolving into the treatment liquid and dissolving the first layer into the treatment liquid, and sequentially dissolving the protruding portion and the second layer into the treatment liquid after the dissolution of the first layer.

Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes: respectively forming a first layer and a second layer at the top of a protruding portion and at the bottom of a depressed portion of a treatment target having protrusions/depressions in such a manner that sidewalls of the protruding portion is exposed, supplying a treatment liquid to the treatment target having the first layer and the second layer, bringing a catalyst into contact with or closer to the first layer and thereby increasing the dissolution rate of the first layer in dissolving into the treatment liquid and dissolving the first layer into the treatment liquid, and sequentially dissolving the protruding portion and the second layer into the treatment liquid after the dissolution of the first layer.

Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming, on a substrate, protruding portions with first films on the surfaces thereof, respectively, forming a second film different from the first films so as to fill a depressed portion between the protruding portions and to cover the protruding portions, processing in such a manner that the top surface of the second film on the depressed portion is higher than the top surface of the second film on the protruding portions after forming the second film to cover the protruding portions, and polishing the second film on the depressed and protruding portions to expose the first films.

Abstract: In accordance with an embodiment, a polishing apparatus includes a polishing table and a polishing head. A retainer ring is attached to a surface of the polishing head. The surface of the polishing head faces the polishing table. The retainer ring includes a ceramic material. The fracture toughness of the ceramic material is 4 MPa·m1/2 or more.

Abstract: A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.

Abstract: A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.

Abstract: A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.

Abstract: A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MB) (mass %) of the iron (III) compound (B) satisfy the relationship “MA/MB=0.004 to 0.1”. The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.

Abstract: A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.

Abstract: A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing an amount of heat generated during polishing of a substrate to be polished and of effectively cooling a substrate holding part of the substrate holding mechanism, and also capable of effectively preventing a polishing solution and polishing dust from adhering to an outer peripheral portion of the substrate holding part and drying thereon. The substrate holding mechanism has a mounting flange, a support member 6 and a retainer ring. A substrate to be polished is held on a lower side of the support member surrounded by the retainer ring, and the substrate is pressed against a polishing surface of a polishing table. The mounting flange is provided with a flow passage contiguous with at least the retainer ring. A temperature-controlled gas is supplied through the flow passage to cool the mounting flange, the support member and the retainer ring.

Abstract: A polishing method can obtain a good polishing profile which, for example, will not cause peeling of a semiconductor layer from a silicon substrate. The polishing method includes: positioning a polishing head at a position above a polishing start position in an edge portion of a rotating substrate; lowering a polishing tool of the polishing head until the polishing tool comes into contact with the polishing start position in the edge portion of the rotating substrate and a pressure between the polishing tool and the polishing start position reaches a set pressure; allowing the polishing tool to stay at the polishing start position for a predetermined amount of time; and then moving the polishing head toward a peripheral end of the substrate while keeping the polishing tool in contact with the edge portion of the rotating substrate at the set pressure.

Abstract: A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.

Abstract: A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes: pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon; and pressing a second polishing tape against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.

Abstract: A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing an amount of heat generated during polishing of a substrate to be polished and of effectively cooling a substrate holding part of the substrate holding mechanism, and also capable of effectively preventing a polishing solution and polishing dust from adhering to an outer peripheral portion of the substrate holding part and drying thereon. The substrate holding mechanism has a mounting flange, a support member 6 and a retainer ring. A substrate to be polished is held on a lower side of the support member surrounded by the retainer ring, and the substrate is pressed against a polishing surface of a polishing table. The mounting flange is provided with a flow passage contiguous with at least the retainer ring. A temperature-controlled gas is supplied through the flow passage to cool the mounting flange, the support member and the retainer ring.

Abstract: A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MB) (mass %) of the iron (III) compound (B) satisfy the relationship “MA/MB=0.004 to 0.1”. The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.

Abstract: A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing an amount of heat generated during polishing of a substrate to be polished and of effectively cooling a substrate holding part of the substrate holding mechanism, and also capable of effectively preventing a polishing solution and polishing dust from adhering to an outer peripheral portion of the substrate holding part and drying thereon. The substrate holding mechanism has a mounting flange, a support member 6 and a retainer ring. A substrate to be polished is held on a lower side of the support member surrounded by the retainer ring, and the substrate is pressed against a polishing surface of a polishing table. The mounting flange is provided with a flow passage contiguous with at least the retainer ring. A temperature-controlled gas is supplied through the flow passage to cool the mounting flange, the support member and the retainer ring.

Abstract: A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing an amount of heat generated during polishing of a substrate to be polished and of effectively cooling a substrate holding part of the substrate holding mechanism, and also capable of effectively preventing a polishing solution and polishing dust from adhering to an outer peripheral portion of the substrate holding part and drying thereon. The substrate holding mechanism has a mounting flange, a support member 6 and a retainer ring. A substrate to be polished is held on a lower side of the support member surrounded by the retainer ring, and the substrate is pressed against a polishing surface of a polishing table. The mounting flange is provided with a flow passage contiguous with at least the retainer ring. A temperature-controlled gas is supplied through the flow passage to cool the mounting flange, the support member and the retainer ring.