Abstract: A multifrequency-band microstrip antenna, for use in microwave to millimeter-wave band, is provided with different thicknesses of dielectric films to optimized the performance in any operating frequencies desired. In a double lamination antena substrate, for example, lamination 1 is made up of a number of dielectric films having a given dielectric constant and thickness, and lamination 2 is made up of a number of dielectric films of another given dielectric constant and thickness. An radiation element is provided between the films in lamination 2, and a ground plane is provided between the films in lamination 1. A strip conductor for propagating radio signals is provided in lamination 1 such that the ground plane intervenes between the radiation element and the strip conductor, thereby shielding the radiation element except for a slot formed in the ground plane. The input signal couples to the radiation element through the slot, thereby feeding the radiation element and operating the microstrip antenna.

Abstract: A voltage controlled oscillator for wide tuning range of frequency with less phase noise has a bipolar transistor provided with a positive feedback circuit between a base and an emitter of the transistor, an impedance matching circuit coupled with a collector of the transistor and an output terminal, a resistor coupled between the base of the transistor and a control source which provides control voltage for adjusting oscillation frequency of the oscillator. The base of the transistor shows capacitive negative impedance, and an inductive element is coupled with the base of the transistor for oscillation. The emitter of the transistor is grounded for D.C. voltage through an inductor or a transmission line, or coupled with a control voltage.

Abstract: A monolithic integrated circuit utilizing areas associated with unused devices for wiring signal lines, thereby implementing effective wiring and improving high frequency characteristics. A common substrate consisting of a semiconductor substrate, and active devices, capacitor electrodes and resistors formed on the semiconductor substrate, is followed by a dielectric film, a ground metal, a dielectric film whose thickness is equal to or greater than 1 .mu.m, and signal lines. A desired circuit is formed by connecting the signal lines with electrodes of the active devices and other elements via, holes in the dielectric films, and windows of the ground metal. The windows of the ground metal are formed over portions of active devices which are used as components of the circuit.

Abstract: A hybrid including a substrate, a first dielectric layer, a ground metal, and a second dielectric layer, which are stacked in this order. Transmission lines are formed below and above the ground metal, and a slit is formed in the ground metal at a position corresponding to projection of the transmission lines onto the ground metal. The substrate has a greater dielectric constant than the dielectric layers. This makes it possible to prevent coupling between the upper and lower transmission lines, thereby implementing a high impedance, low loss transmission lines.