Patents by Inventor Kenji Kanayama

Kenji Kanayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10163663
    Abstract: A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: December 25, 2018
    Assignee: Kokusai Electric Corporation
    Inventors: Toshihiko Yonejima, Masanori Okuno, Masakazu Sakata, Hiroki Okamiya, Takeshi Kasai, Katsuaki Nogami, Takashi Ozaki, Kenji Kanayama, Unryu Ogawa, Seiyo Nakashima, Tomoyuki Yamada, Masayuki Yamada
  • Publication number: 20180144953
    Abstract: A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.
    Type: Application
    Filed: November 22, 2017
    Publication date: May 24, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Toshihiko YONEJIMA, Masanori OKUNO, Masakazu SAKATA, Hiroki OKAMIYA, Takeshi KASAI, Katsuaki NOGAMI, Takashi OZAKI, Kenji KANAYAMA, Unryu OGAWA, Seiyo NAKASHIMA, Tomoyuki YAMADA, Masayuki YAMADA
  • Publication number: 20160218012
    Abstract: A fine pattern-forming method includes: a core pattern-forming step of forming a core pattern of a predetermined line width at a substrate surface side; a sidewall-forming step of forming a sidewall on the core pattern formed in the core pattern-forming step; and a core pattern removing step of removing the core pattern in a state where the sidewall is left, by using an etching gas after the sidewall-forming step, and is configured such that, in the core pattern removing step, a film deposited at a substrate back side in the core pattern-forming step is removed in parallel to the removal of the core pattern.
    Type: Application
    Filed: September 29, 2014
    Publication date: July 28, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Satoshi SHIMAMOTO, Toshiyuki KIKUCHI, Jiro YUGAMI, Yoshiro HIROSE, Yuichi WADA, Kenji KANAYAMA, Hiroshi ASHIHARA, Kenji KAMEDA
  • Patent number: 9334567
    Abstract: There is provided a method for manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle one or more times. The cycle includes forming a first layer containing silicon, nitrogen, and carbon by supplying a first silane-based source having a halogen-based ligand to the substrate and supplying a second silane-based source having amino groups to the substrate. The cycle also includes forming a second layer by modifying the first layer by performing supplying a reactive gas different from each of the sources, to the substrate.
    Type: Grant
    Filed: March 25, 2015
    Date of Patent: May 10, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshiro Hirose, Kenji Kanayama, Norikazu Mizuno, Yushin Takasawa, Yosuke Ota
  • Patent number: 9217199
    Abstract: There is provided a substrate processing apparatus, including a processing chamber configured to house a substrate, a first source supply system configured to supply a chlorosilane-based source to the substrate in the processing chamber, a second source supply system configured to supply an aminosilane-based source to the substrate in the processing chamber and a reactive gas supply system configured to supply a reactive gas different from each of the sources, to the substrate in the processing chamber. The substrate processing apparatus further includes a controller configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that a process of forming an insulating film on the substrate is performed by an alternating process.
    Type: Grant
    Filed: March 25, 2015
    Date of Patent: December 22, 2015
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshiro Hirose, Kenji Kanayama, Norikazu Mizuno, Yushin Takasawa, Yosuke Ota
  • Publication number: 20150259795
    Abstract: There is provided a substrate processing apparatus, including a processing chamber configured to house a substrate, a first source supply system configured to supply a chlorosilane-based source to the substrate in the processing chamber, a second source supply system configured to supply an aminosilane-based source to the substrate in the processing chamber and a reactive gas supply system configured to supply a reactive gas different from each of the sources, to the substrate in the processing chamber. The substrate processing apparatus further includes a controller configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that a process of forming an insulating film on the substrate is performed by an alternating process.
    Type: Application
    Filed: March 25, 2015
    Publication date: September 17, 2015
    Inventors: Yoshiro HIROSE, Kenji KANAYAMA, Norikazu MIZUNO, Yushin TAKASAWA, Yosuke OTA
  • Publication number: 20150200092
    Abstract: There is provided a method for manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle one or more times. The cycle includes forming a first layer containing silicon, nitrogen, and carbon by supplying a first silane-based source having a halogen-based ligand to the substrate and supplying a second silane-based source having amino groups to the substrate. The cycle also includes forming a second layer by modifying the first layer by performing supplying a reactive gas different from each of the sources, to the substrate.
    Type: Application
    Filed: March 25, 2015
    Publication date: July 16, 2015
    Inventors: Yoshiro HIROSE, Kenji KANAYAMA, Norikazu MIZUNO, Yushin TAKASAWA, Yosuke OTA
  • Patent number: 9018104
    Abstract: There is provided a method for manufacturing a semiconductor device, including forming an insulating film having a prescribed composition and a prescribed film thickness on a substrate by alternately performing the following steps prescribed number of times: supplying one of the sources of a chlorosilane-based source and an aminosilane-based source to a substrate in a processing chamber, and thereafter supplying the other source, to form a first layer containing silicon, nitrogen, and carbon on the substrate; and supplying a reactive gas different from each of the sources, to the substrate in the processing chamber, to modify the first layer and form a second layer.
    Type: Grant
    Filed: March 2, 2011
    Date of Patent: April 28, 2015
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yoshiro Hirose, Kenji Kanayama, Norikazu Mizuno, Yushin Takasawa, Yosuke Ota
  • Patent number: 8535479
    Abstract: Provided is a substrate processing apparatus including: a processing chamber for processing a substrate; a material supply unit for supplying a Si material, an oxidation material and a catalyst into the processing chamber; a heating unit for heating the substrate; and a controller for controlling at least the material supply unit and the heating unit, wherein the controller is configured to control the heating unit to heat the substrate with a first photoresist pattern formed thereon at a processing temperature lower than a deformation temperature of a first photoresist constituting the first photoresist pattern, and to control the material supply unit to alternately supply the silicon-containing material and the catalyst, and alternately supply the oxidation material and the catalyst into the processing chamber in a repeated manner to form on the substrate a thin film having a thickness equal to 5% of one half pitch of the first photoresist pattern.
    Type: Grant
    Filed: December 6, 2011
    Date of Patent: September 17, 2013
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Norikazu Mizuno, Kenji Kanayama, Kazuyuki Okuda, Yoshiro Hirose, Masayuki Asai
  • Publication number: 20130052836
    Abstract: There is provided a method for manufacturing a semiconductor device, including forming an insulating film having a prescribed composition and a prescribed film thickness on a substrate by alternately performing the following steps prescribed number of times: supplying one of the sources of a chlorosilane-based source and an aminosilane-based source to a substrate in a processing chamber, and thereafter supplying the other source, to form a first layer containing silicon, nitrogen, and carbon on the substrate; and supplying a reactive gas different from each of the sources, to the substrate in the processing chamber, to modify the first layer and form a second layer.
    Type: Application
    Filed: March 2, 2011
    Publication date: February 28, 2013
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshiro Hirose, Kenji Kanayama, Norikazu Mizuno, Yushin Takasawa, Yosuke Ota
  • Publication number: 20120073751
    Abstract: Provided is a substrate processing apparatus comprising: a processing chamber for processing a substrate; a material supply unit for supplying a Si material, an oxidation material and a catalyst into the processing chamber; a heating unit for heating the substrate; and a controller for controlling at least the material supply unit and the heating unit, wherein the controller controls the heating unit such that heating temperature of the substrate becomes a processing temperature lower than a deformation temperature of a first photoresist constituting a first photoresist pattern, and the controller controls the material supply unit to repeat an alternate supply of the Si material and the catalyst, and the oxidation material and the catalyst into the processing chamber a plurality of times.
    Type: Application
    Filed: December 6, 2011
    Publication date: March 29, 2012
    Inventors: Norikazu MIZUNO, Kenji Kanayama, Kazuyuki Okuda, Yoshiro Hirose, Masayuki Asai
  • Patent number: 8093159
    Abstract: Provided is a manufacturing method of a semiconductor device, which is capable of realizing fine-pitch patterns and thus improving stabilization of patterning precision. The manufacturing method of the semiconductor device comprises forming a first photoresist pattern in a predetermined region on a substrate, depositing a thin film on the surface of the first photoresist pattern, and forming a second photoresist pattern in a region where the first photoresist pattern is not formed.
    Type: Grant
    Filed: August 29, 2008
    Date of Patent: January 10, 2012
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Norikazu Mizuno, Kenji Kanayama, Kazuyuki Okuda, Yoshiro Hirose, Masayuki Asai
  • Publication number: 20090277382
    Abstract: Provided is a semiconductor manufacturing apparatus, which is capable of realizing fine-pitch patterns and thus improving stabilization of patterning precision. The semiconductor manufacturing apparatus comprises: a photoresist processing unit for forming a photoresist pattern in a predetermined region on a substrate to which a predetermined process is applied; and a substrate processing unit for forming a thin film on the surface of at least the photoresist pattern.
    Type: Application
    Filed: March 18, 2009
    Publication date: November 12, 2009
    Inventors: Norikazu Mizuno, Kenji Kanayama, Kazuyuki Okuda, Yoshiro Hirose, Masayuki Asai
  • Publication number: 20090278235
    Abstract: Provided is a manufacturing method of a semiconductor device, which is capable of realizing fine-pitch patterns and thus improving stabilization of patterning precision. The manufacturing method of the semiconductor device comprises forming a first photoresist pattern in a predetermined region on a substrate, depositing a thin film on the surface of the first photoresist pattern, and forming a second photoresist pattern in a region where the first photoresist pattern is not formed.
    Type: Application
    Filed: August 29, 2008
    Publication date: November 12, 2009
    Inventors: Norikazu MIZUNO, Kenji KANAYAMA, Kazuyuki OKUDA, Yoshiro HIROSE, Masayuki ASAI
  • Patent number: 7262691
    Abstract: A security system includes: an outing motion detection sensor for detecting actions of a non-monitored person when leaving the monitored area; and human body sensors for detecting the non-monitored person in the monitored area, and a home controller includes: a mode switching section for switching between an alert mode and a non-alert mode; a storage section for storing sensor state accumulative data that indicates initial states of the human body sensors in the alert mode; a human body sensor confirming section for detecting a matching between detection states of the human body sensors and the sensor state accumulative data; and a mode switching reminder section for causing a remote alarm device located at a remote place to present mode change reminder information, when the outing motion detection sensor detects that the non-monitored person has left the monitored area, the detection states of the human body sensors are matched with the sensor state accumulative data, and the non-alert mode has been set.
    Type: Grant
    Filed: June 2, 2004
    Date of Patent: August 28, 2007
    Assignee: Omron Corporation
    Inventor: Kenji Kanayama
  • Patent number: 7065391
    Abstract: A slave can take any of a start state in which the slave can communicate with a master, a communication control state in which at least the slave can receive a start request signal transmitted by the master and makes a transition to the start state upon reception of the start request signal, or a standby state in which power is less consumed than in the start state or the communication control state. The slave further includes a state control section for repeatedly operating so that the slave in the standby state is switched to the communication control state at a predetermined timing and is switched to the standby state when the communication control state continues for a predetermined time period without receiving the start request signal.
    Type: Grant
    Filed: July 18, 2003
    Date of Patent: June 20, 2006
    Assignee: Omron Corporation
    Inventors: Kenji Kanayama, Toshihiro Suzuki
  • Publication number: 20060069740
    Abstract: The subject invention provides an information delivery system which performs information reproduction according to reproduction circumstances, such as available communication modes for the information reproduction device, user's request etc., thereby carrying out information delivery in the most appropriate way to the user. For example, the center system (3) determines the level of attribute information of the target information, which is information item that the user of vehicle (2) wishes to obtain through communication with the center system (3). According to this determination, the center system (3) selects one of DSRC communication using a DSRC terminal device (1) and a DSRC radio device (4), or a mobile phone (5) as means for transmission of target information.
    Type: Application
    Filed: November 10, 2003
    Publication date: March 30, 2006
    Inventors: Tanichi Ando, Yuji Kusano, Takaaki Ombe, Kenji Kanayama
  • Publication number: 20060007318
    Abstract: An image captured by a monitoring camera is stored in an image database in a monitoring system center apparatus, and is subsequently transmitted as an entire image to a cellular phone. When a user checks the image displayed on the cellular phone and determines that there is an object that the user desires to display in enlarged form, the user accesses and instructs a WEB page provided by the center apparatus to display an enlarged display menu. When an object to be displayed in enlarged form is selected by the user, image recognition processing is performed by an image recognizing unit in the center apparatus. A partial image including the object to be displayed in enlarged form is extracted, and the partial image is transmitted to the cellular phone.
    Type: Application
    Filed: July 9, 2004
    Publication date: January 12, 2006
    Inventors: Kenji Kanayama, Tishihiro Suzuki, Makoto Tochihara
  • Publication number: 20050231357
    Abstract: A camera (11) includes: a CMOS image sensor (12) which converts input light so as to obtain image data; a GPS/LPS section (21) or a non-contact ID-chip reading section (22), which detects the location of the camera itself; an operation restricting condition setting section (20) which determines whether or not the detected location is inside of a predetermined area; and an operation controlling section (17). If it is determined that the location of the camera itself is outside of the predetermined area, the operation controlling section (17) restricts the image pickup operation in the CMOS sensor (12).
    Type: Application
    Filed: April 24, 2003
    Publication date: October 20, 2005
    Inventors: Kenji Kanayama, Toshihiro Suzuki
  • Publication number: 20050225442
    Abstract: A security system includes: an outing motion detection sensor for detecting actions of a non-monitored person when leaving the monitored area; and human body sensors for detecting the non-monitored person in the monitored area, and a home controller includes: a mode switching section for switching between an alert mode and a non-alert mode; a storage section for storing sensor state accumulative data that indicates initial states of the human body sensors in the alert mode; a human body sensor confirming section for detecting a matching between detection states of the human body sensors and the sensor state accumulative data; and a mode switching reminder section for causing a remote alarm device located at a remote place to present mode change reminder information, when the outing motion detection sensor detects that the non-monitored person has left the monitored area, the detection states of the human body sensors are matched with the sensor state accumulative data, and the non-alert mode has been set.
    Type: Application
    Filed: June 2, 2004
    Publication date: October 13, 2005
    Inventor: Kenji Kanayama