Patents by Inventor Kenji Kohguchi

Kenji Kohguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Input protection device for C-MOS device
    Patent number: 4872045
    Abstract: An input protection device for a C-MOS device having an n-type semiconductor substrate and a p-type well region. The device comprises a diode consisting of the p-type well region and an n.sup.+ -type layer diffusion formed in the p-type well region and connected between a gate of a C-MOS FET and ground. The n.sup.+ -type layer of the diode has a higher impurity concentration and a greater diffusion depth than those of n.sup.+ -type layers formed in the p-type well region and constitute the source and drain of an n-channel MOSFET.
    Type: Grant
    Filed: September 2, 1983
    Date of Patent: October 3, 1989
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Isao Baba, Takeo Kondo, Leiichi Yanagisawa, Kenji Kohguchi