Abstract: To provide an organic semiconductor composition that can exhibit a high carrier transport property and give uniform characteristics. An organic semiconductor composition characterized by containing a high molecular weight compound having a carrier transport property and a low molecular weight compound, in which the low molecular weight compound has a structure represented by Formula (1) and a content ratio of the low molecular weight compound is from 5 to 95 parts by mass relative to a total of 100 parts by mass of the high molecular weight compound and the low molecular weight compound, [where, E represents a sulfur atom or a selenium atom, three E's may be the same or may be different from one another, and an aromatic ring in Formula may have substituents].

Abstract: An object of the present invention is to provide a polymer compound providing high charge mobility. The polymer compound of the present invention has a repeating unit represented by the formula (1): wherein Ar1 and Ar2 are each an aromatic hydrocarbon ring, a heterocycle, or a fused ring of an aromatic hydrocarbon ring and a heterocycle; and R1, R2, R3 and R4 each represent a hydrogen atom, an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an arylalkyl group, an arylalkoxy group, an arylalkylthio group, a substituted silyl group, an unsubstituted or substituted carboxyl group, a monovalent heterocyclic group, a cyano group or a fluorine atom.

Abstract: Disclosed is a method for producing a compound semiconductor epitaxial substrate having a pn junction by selective growth which is characterized by using a base substrate having an average residual strain of not more than 1.0×10?5.

Abstract: An object of the present invention is to provide an organic semiconductor composition capable of forming an organic film having high carrier transportability. A preferable organic semiconductor composition contains a lower molecular weight compound and a higher molecular weight compound having carrier transportability, and the solubility parameter of the higher molecular weight compound and the solubility parameter of the lower molecular weight compound differ by 0.6 to 1.5.

Abstract: To provide an organic semiconductor composition that can exhibit a high carrier transport property and give uniform characteristics. An organic semiconductor composition characterized by containing a high molecular weight compound having a carrier transport property and a low molecular weight compound, in which the low molecular weight compound has a structure represented by Formula (1) and a content ratio of the low molecular weight compound is from 5 to 95 parts by mass relative to a total of 100 parts by mass of the high molecular weight compound and the low molecular weight compound, [where, E represents a sulfur atom or a selenium atom, three E's may be the same or may be different from one another, and an aromatic ring in Formula may have substituents].

Abstract: An object of the present invention is to provide a polymer compound providing high charge mobility. The polymer compound of the present invention has a repeating unit represented by the formula (1): wherein Ar1 and Ar2 are each an aromatic hydrocarbon ring, a heterocycle, or a fused ring of an aromatic hydrocarbon ring and a heterocycle; and R1, R2, R3 and R4 each represent a hydrogen atom, an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an arylalkyl group, an arylalkoxy group, an arylalkylthio group, a substituted silyl group, an unsubstituted or substituted carboxyl group, a monovalent heterocyclic group, a cyano group or a fluorine atom.

Abstract: An organic thin-film transistor of the invention comprises an organic semiconductor layer that contains a polymer compound having a repeating unit represented by the following formula (1) and/or a repeating unit represented by the following formula (2), and a repeating unit represented by the following formula (3).

Abstract: A compound semiconductor epitaxial substrate and a process for producing the same are provided. The compound semiconductor epitaxial substrate comprises a single crystal substrate, a lattice mismatch compound semiconductor layer and a stress compensation layer, wherein the lattice mismatch compound semiconductor layer and the stress compensation layer are disposed on the identical surface side of the single crystal substrate, there is no occurrence of lattice relaxation in the lattice mismatch compound semiconductor layer, as well as the stress compensation layer, and Ls representing the lattice constant of the single crystal substrate, Lm representing the lattice constant of the lattice mismatch compound semiconductor layer, and Lc representing the lattice constant of the stress compensation layer satisfy the formula (1a) or (1b).

Abstract: An object of the present invention is to provide an organic semiconductor composition capable of forming an organic film having high carrier transportability. A preferable organic semiconductor composition contains a lower molecular weight compound and a higher molecular weight compound having carrier transportability, and the solubility parameter of the higher molecular weight compound and the solubility parameter of the lower molecular weight compound differ by 0.6 to 1.5.

Abstract: The present invention provides an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor. The oxide semiconductor material contains Zn, Sn, and O, does not contain In, and has an electron carrier concentration higher than 1×1015/cm3 and less than 1×1018/cm3. The electronic device comprises a semiconductor layer formed of the oxide semiconductor material, and an electrode provided on the semiconductor layer. The field effect transistor comprises a source electrode and a drain electrode which are arranged in separation from each other on the semiconductor layer; and a gate electrode placed at a position where the gate electrode can apply a bias potential to a region of the semiconductor layer positioned between the source electrode and the drain electrode.

Abstract: It is an object of the invention to provide a polymer compound that can exhibit high charge mobility when used in an organic transistor. The polymer compound according to a preferred embodiment comprises a repeating unit represented by the following formula (1). [In the formula, R1 represents an alkyl group, alkoxy group, alkylthio group, aryl group, aryloxy group, arylthio group, arylalkyl group, arylalkoxy group, arylalkylthio group, substituted silyl group, substituted carboxyl group, monovalent heterocyclic group, cyano group or a fluorine atom, and l is an integer of 2 to 8. The multiple R1 groups may be the same or different.

Abstract: A fluorescent substance characterized by comprising a base crystal composed of a compound represented by the formula: M1aM2bNc wherein M1 is at least one element selected from the group consisting of Mg, Ca, Sr, Ba and Zn; M2 is at least one element selected from the group consisting of Al, Ga and In; and c=(2a/3)+b, 0<a and 0<b, with at least one element selected from the group consisting of a rare earth metal, Zn and Mn as an activator contained therein.

Abstract: A compound semiconductor substrate manufacturing method suitable for manufacturing a compound semiconductor element having high electrical characteristics. The compound semiconductor substrate manufacturing method is a method for manufacturing a compound semiconductor substrate having pn junction, including an epitaxial growing process, a selective growing process and other discretionary processes after the epitaxial growing process. The highest temperatures in the selective growing process and other discretionary processes after the epitaxial growing process are lower than that in the epitaxial growing process prior to the selective growing process.

Abstract: A light-emitting device with improved luminescence characteristics, particularly color-rendering properties, includes a phosphor. The phosphor includes a compound represented by formula aM1O-bM22O3-cM3O2, wherein M1 represents at least one element selected from the group consisting of Ba, Sr, Ca, Mg and Zn, M2 represents at least one element selected from the group consisting of Al, Sc, Ga, Y, In, La, Gd and Lu, M3 represents at least one element selected from the group consisting of Si, Ti, Ge, Zr, Sn and Hf, a is a value of not less than 8 and not more than 10, b is a value of not less than 0.8 and not more than 1.2, and c is a value of not less than 5 and not more than 7, and having at least one element as an activator selected from the group consisting of rare earth elements, Mn, Bi and Zn incorporated into the compound.

Abstract: Disclosed is a method for producing a compound semiconductor epitaxial substrate having a pn junction by selective growth which is characterized by using a base substrate having an average residual strain of not more than 1.0×10?5.

Abstract: A method for manufacturing a compound semiconductor epitaxial substrate with few concave defects is provided. The method for manufacturing a compound semiconductor epitaxial substrate comprises a step of epitaxially growing an InGaAs layer on an InP single crystal substrate or on an epitaxial layer lattice-matched to the InP single crystal substrate under conditions of ratio of V/: 10-100, growth temperature: 630° C.-700° C., and growth rate: 0.6 ?m/h-2 ?m/h.

Abstract: A compound semiconductor substrate manufacturing method suitable for manufacturing a compound semiconductor element having high electrical characteristics. The compound semiconductor substrate manufacturing method is a method for manufacturing a compound semiconductor substrate having pn junction, including an epitaxial growing process, a selective growing process and other discretionary processes after the epitaxial growing process. The highest temperatures in the selective growing process and other discretionary processes after the epitaxial growing process are lower than that in the epitaxial growing process prior to the selective growing process.

Abstract: A compound semiconductor epitaxial substrate and a process for producing the same are provided. The compound semiconductor epitaxial substrate comprises a single crystal substrate, a lattice mismatch compound semiconductor layer and a stress compensation layer, wherein the lattice mismatch compound semiconductor layer and the stress compensation layer are disposed on the identical surface side of the single crystal substrate, there is no occurrence of lattice relaxation in the lattice mismatch compound semiconductor layer, as well as the stress compensation layer, and Ls representing the lattice constant of the single crystal substrate, Lm representing the lattice constant of the lattice mismatch compound semiconductor layer, and Lc representing the lattice constant of the stress compensation layer satisfy the formula (1a) or (1b).

Abstract: An InGaP buffer layer (3) is formed on a semi-insulating GaAs substrate (1) to a thickness of not less than 5 nm and not greater than 500 nm and an InAlAs layer (4) and an InGaAs channel layer (5) are grown thereon to form a heterostructure. An In segregation effect occurs at the time of forming the InGaP buffer layer (3), so that the region of the InGaP buffer layer (3) near the layer above becomes excessive in In. As a result, the composition of the surface of the InGaP buffer layer (3) becomes very close to the composition of InP, thereby suppressing occurrence of misfit dislocations that can result in degradation of the surface condition. Further, the surface condition of the InAlAs layer (4) and InGaAs channel layer (5) formed thereon can be made good.

Abstract: A method for manufacturing a compound semiconductor epitaxial substrate with few concave defects is provided. The method for manufacturing a compound semiconductor epitaxial substrate comprises a step of epitaxially growing an InGaAs layer on an InP single crystal substrate or on an epitaxial layer lattice-matched to the InP single crystal substrate under conditions of ratio of V/: 10-100, growth temperature: 630° C.-700° C., and growth rate: 0.6 ?m/h-2 ?m/h.