Abstract: This power supply unit of a control system outputs a notification signal to a calculation unit when a time in which an input voltage becomes smaller than a threshold voltage exceeds a prescribed first measurement time. When detecting that a predetermined second measurement time has elapsed after the notification signal has been received, the calculation unit outputs an instruction signal instructing the execution of a process before a stop in preparation for a prescribed stop of power supply, and executes the process before the stop in place of the current process. Settings of the threshold voltage and the second measurement time are configured to be changeable by means of an external operation.

Abstract: This power supply unit of a control system outputs a notification signal to a calculation unit when a time in which an input voltage becomes smaller than a threshold voltage exceeds a prescribed first measurement time. When detecting that a predetermined second measurement time has elapsed after the notification signal has been received, the calculation unit outputs an instruction signal instructing the execution of a process before a stop in preparation for a prescribed stop of power supply, and executes the process before the stop in place of the current process. Settings of the threshold voltage and the second measurement time are configured to be changeable by means of an external operation.

Abstract: A flow passage member includes a wall formed of ceramics, a space surrounded by the wall being a flow passage through which a fluid flows, a ratio of an area occupied by a grain boundary phase in an inner surface of a wall part of the wall in which wall part heat exchange is conducted being smaller than a ratio of an area occupied by a grain boundary phase in an outer surface of the wall part.

Abstract: A flow passage member includes a wall formed of ceramics, a space surrounded by the wall being a flow passage through which a fluid flows, a ratio of an area occupied by a grain boundary phase in an inner surface of a wall part of the wall in which wall part heat exchange is conducted being smaller than a ratio of an area occupied by a grain boundary phase in an outer surface of the wall part.

Abstract: A silicon nitride substrate comprises a substrate comprising a silicon nitride sintered body, and a plurality of granular bodies containing silicon and integrated to a principal surface of the substrate, wherein a plurality of needle crystals or column crystals comprising mainly silicon nitride are extended from a portion of the granular bodies. A brazing material is applied to a principal surface of the substrate, and a circuit member and a heat radiation member are arranged on the applied brazing material, and bonded by heating. Because of a plurality of granular bodies integrated to the principal surface of the substrate, and a plurality of the needle crystals or the column crystals extended from a portion of the granular bodies, a high anchor effect is produced so that the circuit member and the heat radiation member are firmly bonded to the silicon nitride substrate.

Abstract: A silicon nitride substrate comprises a substrate comprising a silicon nitride sintered body, and a plurality of granular bodies containing silicon and integrated to a principal surface of the substrate, wherein a plurality of needle crystals or column crystals comprising mainly silicon nitride are extended from a portion of the granular bodies. A brazing material is applied to a principal surface of the substrate, and a circuit member and a heat radiation member are arranged on the applied brazing material, and bonded by heating. Because of a plurality of granular bodies integrated to the principal surface of the substrate, and a plurality of the needle crystals or the column crystals extended from a portion of the granular bodies, a high anchor effect is produced so that the circuit member and the heat radiation member are firmly bonded to the silicon nitride substrate.