Abstract: A device includes a capacitor that has first and second electrodes having a capacitor insulator there-between. The first electrode is elongated and extends elevationally. The first electrode has elevationally-extending first conductive material and has second conductive material that projects laterally outward from an elevationally-extending part of the first conductive material. The laterally-projecting second conductive material has a vertical thickness that is less than that of the elevationally-extending first conductive material. Support material laterally supports the capacitor and contacts a tip end of the laterally-projecting second conductive material.

Abstract: A device includes a capacitor that has first and second electrodes having a capacitor insulator there-between. The first electrode is elongated and extends elevationally. The first electrode has elevationally-extending first conductive material and has second conductive material that projects laterally outward from an elevationally-extending part of the first conductive material. The laterally-projecting second conductive material has a vertical thickness that is less than that of the elevationally-extending first conductive material. Support material laterally supports the capacitor and contacts a tip end of the laterally-projecting second conductive material.

Abstract: A device includes a capacitor that has first and second electrodes having a capacitor insulator there-between. The first electrode is elongated and extends elevationally. The first electrode has elevationally-extending first conductive material and has second conductive material that projects laterally outward from an elevationally-extending part of the first conductive material. The laterally-projecting second conductive material has a vertical thickness that is less than that of the elevationally-extending first conductive material. Support material laterally supports the capacitor and contacts a tip end of the laterally-projecting second conductive material.

Abstract: A capacitor includes an elevationally inner capacitor electrode, an elevationally outer capacitor electrode, and capacitor insulator between the elevationally inner and outer capacitor electrodes. The elevationally inner capacitor electrode comprises a hollow longitudinally-elongated conductive cylinder-like portion and a non-hollow longitudinally-elongated conductive cylinder-like portion electrically coupled with the hollow cylinder-like portion. The non-hollow cylinder-like portion is radially of and extends longitudinally along a longitudinal side surface of the hollow cylinder-like portion. Additional embodiments and aspects are disclosed.

Abstract: A device comprises a capacitor comprising first and second electrodes having a capacitor insulator there-between. The first electrode is elongated and extends elevationally. The first electrode comprises elevationally-extending first conductive material and comprises second conductive material that projects laterally outward from an elevationally-extending part of the first conductive material. The laterally-projecting second conductive material has a vertical thickness that is less than that of the elevationally-extending first conductive material. Support material laterally supports the capacitor and contacts a tip end of the laterally-projecting second conductive material.

Abstract: A capacitor includes an elevationally inner capacitor electrode, an elevationally outer capacitor electrode, and capacitor insulator between the elevationally inner and outer capacitor electrodes. The elevationally inner capacitor electrode comprises a hollow longitudinally-elongated conductive cylinder-like portion and a non-hollow longitudinally-elongated conductive cylinder-like portion electrically coupled with the hollow cylinder-like portion. The non-hollow cylinder-like portion is radially of and extends longitudinally along a longitudinal side surface of the hollow cylinder-like portion. Additional embodiments and aspects are disclosed.

Abstract: A semiconductor device provided with a capacitor that includes a plurality of cylindrical or columnar storage electrodes provided periodically on a semiconductor substrate, capacitor insulation films that cover the wall surfaces of the storage electrodes, and first conductive films provided on the capacitor insulation film and facing the storage electrodes, wherein the first conductive films of the capacitors adjacent in a first direction in which the storage electrodes are arranged are in contact with each other, and the first conductive films of capacitors adjacent in remaining other directions in which the storage electrodes are arranged are separated from each other.

Abstract: A semiconductor device provided with a capacitor that includes a plurality of cylindrical or columnar storage electrodes provided periodically on a semiconductor substrate, capacitor insulation films that cover the wall surfaces of the storage electrodes, and first conductive films provided on the capacitor insulation film and facing the storage electrodes, wherein the first conductive films of the capacitors adjacent in a first direction in which the storage electrodes are arranged are in contact with each other, and the first conductive films of capacitors adjacent in remaining other directions in which the storage electrodes are arranged are separated from each other.

Abstract: In a method of manufacturing a capacitor, a lower electrode of a capacitor is formed on or above a semiconductor substrate. An ozone gas and an inert gas are simultaneously introduced for a predetermined period into a reaction chamber of an atomic layer deposition apparatus in which the semiconductor substrate is set. Then, the ozone gas is exhausted from the reaction chamber by stopping the introduction of the ozone gas and introducing only the inert gas into the reaction chamber, after the introduction. A capacitive dielectric film is formed on the lower electrode by an atomic layer deposition (ALD) method in the atom layer deposition apparatus. An upper electrode of the capacitor is formed on the capacitive dielectric film after the capacitive dielectric film is formed.

Abstract: A semiconductor device comprises a memory cell region, a peripheral circuit region and a boundary region. In the memory cell region, a concave lower electrode and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A. In the boundary region, one concave lower conductive region and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A.

Abstract: A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first insulating film is formed over a substrate. A second insulating film is formed on the first insulating film. An electrode penetrating the first and the second insulating films is formed. A part of the second insulating film and a part of the electrode are removed so that a first hole is formed in the second insulating film. A first portion of the electrode is exposed through the first hole. A part of the first portion of the electrode is removed by an isotropic etching.

Abstract: A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first insulating film is formed over a substrate. A second insulating film is formed on the first insulating film. An electrode penetrating the first and the second insulating films is formed. A part of the second insulating film and a part of the electrode are removed so that a first hole is formed in the second insulating film. A first portion of the electrode is exposed through the first hole. A part of the first portion of the electrode is removed by an isotropic etching.

Abstract: First, a base structure provided with the main parts of a memory cell is prepared, and a lower electrode comprising a polycrystalline silicon film is thereafter formed on the base structure. Next, the surface of the lower electrode is thermally nitrided at a predetermined temperature to form a silicon nitride film. In the thermal nitridation of the lower electrode, the temperature is increased to a predetermined nitriding temperature, after which the temperature is reduced at a rate that is more gradual than usual. Aluminum oxide (Al2O3) or another metal oxide dielectric film is thereafter formed as the capacitive insulating film on the lower electrode, and an upper electrode is formed on the capacitive insulating film.

Abstract: A method of fabricating a semiconductor device includes: forming a conductive film over a semiconductor wafer; forming a mask film over the conductive film; removing a portion of the mask film covering at least a peripheral portion of the semiconductor wafer such that a portion of the mask film covering a device forming region of the semiconductor wafer remains; and removing an exposed portion of the conductive film with use of the remaining portion of the mask film as a mask.

Abstract: A semiconductor device comprises a memory cell region, a peripheral circuit region and a boundary region. In the memory cell region, a concave lower electrode and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A. In the boundary region, one concave lower conductive region and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A.

Abstract: An atomic layer deposition system includes a reaction chamber, a plurality of exhaust tubes communicated to the reaction chamber, a plurality of first vacuum gauges for monitoring the degree of vacuum of the respective exhaust tubes, a second vacuum gauge for monitoring the degree of vacuum of the reaction chamber, and control valves for adjusting the exhaust volume of the exhaust tubes independently of one another. The control valves are controlled based on the pressures measured by the first and second control valves for achieving a uniform flow of the vapor phase reactant.

Abstract: In a method of manufacturing a capacitor, a lower electrode of a capacitor is formed on or above a semiconductor substrate. An ozone gas and an inert gas are simultaneously introduced for a predetermined period into a reaction chamber of an atomic layer deposition apparatus in which the semiconductor substrate is set. Then, the ozone gas is exhausted from the reaction chamber by stopping the introduction of the ozone gas and introducing only the inert gas into the reaction chamber, after the introduction. A capacitive dielectric film is formed on the lower electrode by an atomic layer deposition (ALD) method in the atom layer deposition apparatus. An upper electrode of the capacitor is formed on the capacitive dielectric film after the capacitive dielectric film is formed.

Abstract: First, a base structure provided with the main parts of a memory cell is prepared, and a lower electrode comprising a polycrystalline silicon film is thereafter formed on the base structure. Next, the surface of the lower electrode is thermally nitrided at a predetermined temperature to form a silicon nitride film. In the thermal nitridation of the lower electrode, the temperature is increased to a predetermined nitriding temperature, after which the temperature is reduced at a rate that is more gradual than usual. Aluminum oxide (Al2O3) or another metal oxide dielectric film is thereafter formed as the capacitive insulating film on the lower electrode, and an upper electrode is formed on the capacitive insulating film.

Abstract: A semiconductor device comprises a memory cell region, a peripheral circuit region and a boundary region. In the memory cell region, a concave lower electrode and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A. In the boundary region, one concave lower conductive region and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A.

Abstract: A semiconductor device comprises a memory cell region, a peripheral circuit region and a boundary region. In the memory cell region, a concave lower electrode and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A. In the boundary region, one concave lower conductive region and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A.