Abstract: According to one embodiment, there is provided a semiconductor device including a first laminated body, a first semiconductor columnar member, a first gate insulating film, and a second laminated body. The second laminated body is placed in a periphery of the first laminated body, in which the first insulating layer and a second insulating layer are repeatedly placed one over another in the stacking direction, and has a second stair structure. A width in a first direction of the second laminated body is smaller than a width in the first direction of the first laminated body. The first direction is substantially perpendicular to the stacking direction. A width in a second direction of the second laminated body is smaller than a width in the second direction of the first laminated body. The second direction is substantially perpendicular to the stacking direction and is substantially perpendicular to the first direction.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes an interconnect layer, a stacked body, an insulating layer, a semiconductor pillar, a charge storage layer and a first conductive unit. The stacked body is separated from the interconnect layer in a first direction. The stacked body includes a memory unit and a selection gate provided between the memory unit and the interconnect layer. The insulating layer is provided between the interconnect layer and the stacked body. The semiconductor pillar pierces the stacked body in the first direction. The charge storage layer is provided between the semiconductor pillar and the memory unit. The first conductive unit connects the semiconductor pillar and the interconnect layer. A width of the first conductive unit along a second direction perpendicular to the first direction is wider than a width of the semiconductor pillar along the second direction.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes an interconnect layer, a stacked body, an insulating layer, a semiconductor pillar, a charge storage layer and a first conductive unit. The stacked body is separated from the interconnect layer in a first direction. The stacked body includes a memory unit and a selection gate provided between the memory unit and the interconnect layer. The insulating layer is provided between the interconnect layer and the stacked body. The semiconductor pillar pierces the stacked body in the first direction. The charge storage layer is provided between the semiconductor pillar and the memory unit. The first conductive unit connects the semiconductor pillar and the interconnect layer. A width of the first conductive unit along a second direction perpendicular to the first direction is wider than a width of the semiconductor pillar along the second direction.

Abstract: A coated steel sheet for alkaline dry cell positive electrode cans, comprising a Ni-electroplated steel sheet having a chemical conversion coating formed on the surface thereof, and further formed thereon a resin coating film containing a conductive agent, wherein said coated steel sheet has a Ni coating layer made to have a hardness of from 300 to 650 as Vickers hardness. This coated steel sheet promises a superior coating adhesion after worked into positive electrode cans by pressing.

Abstract: A coated metal sheet for alkaline dry cell positive electrode cans, comprising a metal sheet covered via a chromate film, preferably a chromate film containing carbon black, with a coating film mainly composed of at least one of an epoxy resin, an epoxy-acrylic resin and a polyester resin, containing at least one of graphite powder having a purity of not less than 95%, an aspect ratio of not less than 50 and an average particle diameter of not larger than 50 .mu.m and carbon black having an oil absorption of not less than 250 ml/100 g as measured using DBP, or a coating film further incorporated with a cross-linking agent. This coated metal sheet may be only worked by drawing to produce the positive electrode cans.