Abstract: A light-receiving element (10) according to the present invention includes a semiconductor layer (100) including a p-type semiconductor region (101), an n-type semiconductor region (102), and a multiplication region (103), and a p-type light absorption layer (104) formed on the multiplication region. The p-type semiconductor region and the n-type semiconductor region are formed to sandwich the multiplication region in a planar direction of the semiconductor layer. This allows an easy implementation of a light-receiving element that serves as an avalanche photodiode by a monolithic manufacturing process.

Abstract: A light-receiving element (10) according to the present invention includes a semiconductor layer (100) including a p-type semiconductor region (101), an n-type semiconductor region (102), and a multiplication region(103), and a p-type light absorption layer (104) formed on the multiplication region. The p-type semiconductor region and the n-type semiconductor region are formed to sandwich the multiplication region in a planar direction of the semiconductor layer. This allows an easy implementation of a light-receiving element that serves as an avalanche photodiode by a monolithic manufacturing process.

Abstract: An n-type InP sub collector layer 2 heavily doped with silicon (Si), an InP collector layer 3, a p-type GaAs(0.51)Sb(0.49) base layer 4 heavily doped with carbon (C), an n-type In(1-y)Al(y)P emitter layer 7 doped with Si, an n-type InP cap layer 8 heavily doped with Si, and an n-type In(0.53)Ga(0.47)As contact layer 9 heavily doped with Si are stacked on a substrate 1.

Abstract: An n-type InP sub collector layer 2 heavily doped with silicon (Si), an InP collector layer 3, a p-type GaAs(0.51)Sb(0.49) base layer 4 heavily doped with carbon (C), an n-type In(1-y)Al(y)P emitter layer 7 doped with Si, an n-type InP cap layer 8 heavily doped with Si, and an n-type In(0.53)Ga(0.47)As contact layer 9 heavily doped with Si are stacked on a substrate 1.

Abstract: A heterojunction bipolar transistor includes a collector contact layer constituted by a high-concentration first semiconductor layer of a first conductivity type formed on a semiconductor substrate, a collector region stacked on the collector contact layer, a base layer constituted by a fifth semiconductor layer of a second conductivity type formed on the collector region, and an emitter layer constituted by a semiconductor layer of the first conductivity type formed on the base layer.

Abstract: Feed bar advance and return driving apparatus for a transfer press. An upper slider is reciprocally vertically movable in the press crown in synchronization with the operation of the press, and a pinion rotatably mounted on the upper slider is rotated alternatingly in opposite directions with the upward and downward vertical movement of the upper slider. A drive rack vertically slidably supported on the upper slider is connected to the pinion at a position on the pinion which is eccentric to the axis of rotation of the pinion and is reciprocally vertically driven by the rotation of the pinion. The lower end of the drive rack extends downwardly and engages a drive pinion for rotating the drive pinion alternatingly in opposite directions during the reciprocal vertical motion of the drive rack.