Abstract: The present invention provides a semiconductor device comprising a single-crystal silicon substrate; and a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon. substrate. The single-crystal oxide thin film is directly in contact with a surface of the single-crystal silicon substrate, and contains a bivalent metal that is reactive to silicon.

Abstract: A composition includes (A) an alkali-soluble resin, (B) a quinonediazide ester of a compound represented by the following formula: 1

Abstract: A ferroelectric capacitor includes a pair of electrodes, and at least one ferroelectric held between the pair of electrodes, in which the ferroelectric includes a first ferroelectric layer having a surface roughness (RMS) determined with an atomic force microscope of 10 nm or more; and a second ferroelectric layer being arranged adjacent to the first ferroelectric layer and having an RMS of 5 nm or less. A process produces such a ferroelectric capacitor by forming a first ferroelectric layer on or above one of a pair of electrodes at a temperature equal to or higher than a crystallization temperature at which the first ferroelectric layer takes on a ferroelectric crystalline structure, and forming a second ferroelectric layer on the first ferroelectric layer at a temperature lower than a crystallization temperature at which the second ferroelectric layer takes on a ferroelectric crystalline structure.

Abstract: The present invention provides a semiconductor device comprising a single-crystal silicon substrate; and a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon substrate. The single-crystal oxide thin film is directly in contact with a surface of the single-crystal silicon substrate, and contains a bivalent metal that is reactive to silicon.

Abstract: A method of manufacturing an electronic device includes the steps of: (a) preparing a (001) oriented ReO3 layer; and (b) forming a (001) oriented oxide ferroelectric layer having a perovskite structure on the ReO3 layer. Preferably, the step (a) includes the steps of: (a-1) preparing a (001) oriented MgO layer; and (a-2) forming a (001) oriented ReO3 layer on the MgO layer. An electronic device capable of obtaining a ferroelectric layer of a large polarization and a method of manufacturing the same are provided.

Abstract: Solid material gasification method comprises a solution preparation step wherein a first solid material is dissolved in a solvent to prepare a gasification solution, a solvent removal step wherein a second solid material is separated by removing the solvent used to prepare the gasification solution from that solution, and a solid sublimation step wherein the second solid material is gasified by sublimation.

Abstract: A device having a capacitor element includes: an underlying body having a non-orientated first surface; a lower electrode formed on the first surface of the underlying body, the lower electrode containing conductive metal oxide and not containing noble metal, such as LaNiO3, the conductive metal oxide having a (0 0 1) orientated ABO3 type pervskite structure; a ferroelectric layer formed on the lower electrode, having a rhombohedral ABO3 type pervskite structure, the ferroelectric layer being preferentially (0 0 1) orientated in conformity with the orientation of the lower electrode, and an upper electrode formed on the ferroelectric layer.

Abstract: After a MOS transistor is formed on a semiconductor substrate, an Ir film, LT film, PZT film, and IrO2 film are formed in this order on the entire surface. Although the LT film itself is not a ferroelectric film, a ferroelectric film is formed by a stacked film of the LT film and PZT film. In a ferroelectric capacitor having this ferroelectric film, the LT film does not contain Pb, so the alignment can be readily controlled during the film formation. This raises the alignment of the LT film. The crystal structure of the LT film is a perovskite structure similar to that of the PZT film. Since the PZT film is formed on this LT film, the alignment of the LT film is taken over when the PZT film is grown. This raises the alignment of the PZT film.

Abstract: An authentication circuit containing at least two types of ferroelectrics having different Curie temperatures and properties of retaining charges by residual polarization. An authentication signal stored in one of the ferroelectrics is erased when the ferroelectrics are held in a Curie temperature or more of the one of the ferroelectrics and below a Curie temperature of the ferroelectrics 2. In an authentication circuit, preferably one of the ferroelectrics outputs a primary authentication signal and, when the ferroelectric 2 receives the primary authentication signal, the ferroelectric 2 outputs a secondary authentication signal, and a plurality of ferroelectrics are formed of two or more types of elements and have different element compositions, the two or more elements are selected from Na, K, Ba, Cd, Hf, O, Pb, Zr, Ti, La, Ca, Sr, Tl, Bi, a rare earth element, Nb, Ta, W, Mo, Fe, Co, and Cr.

Abstract: A composition includes (A) an alkali-soluble resin; and (B) (b-1) a compound of Formula (I): wherein Ds are each a hydrogen atom or a naphthoquinonediazidosulfonyl group; and (b2) a quinonediazide ester of, for example, bis(2-methyl-4-hydroxy-5-cyclohexylphenyl)-3,4-dihydroxyphenylmethane.

Abstract: A fragrance composition having high fragrance properties such as fragrance diffusivity and long-lasting property obtained without changing the fragrance note of the fragrance composition which is useful in various fragrance providing products such as cosmetics, toiletry products, bath compositions and pharmaceuticals having satisfactory fragrance properties such as fragrance diffusivity and long-lasting property. The fragrance composition contains 0.1 to 90% by weight of a glyceryl ether derivative represented by the following general formula (I), such as 2-ethylhexyloxypropanediol as a fixative or fragrance note-improving agent. The fragrance providing product contains 0.01 to 50% by weight of the fragrance composition in the final product composition.

Abstract: A composition includes (A) an alkali-soluble resin; and (B) (b-1) a compound of Formula (I): wherein Ds are each a hydrogen atom or a naphthoquinonediazidosulfonyl group; and (b2) a quinonediazide ester of, for example, methyl gallate.

Abstract: A semiconductor device manufacturing method includes the steps of (a) introducing a first substrate into a first CVD chamber; (b) raising the first substrate temperature to a predetermined value; (c) growing a film on the first substrate by supplying vapor phase material in a material line to the first chamber; (d) introducing a second substrate into a second CVD chamber; (e) raising the second substrate temperature to the predetermined value; and (f) growing a film on the second substrate by supplying the vapor phase material to the second chamber. Steps (c) and (f) supply the vapor phase material selectively to the first and second chambers, respectively. In step (f) after step (c), the chamber to which the vapor phase material is supplied is switched from the first chamber to the second chamber so that the pressure of the vapor phase material in the material line is kept substantially constant.

Abstract: The present invention aims to provide an IC card, requiring no special additional devices, not causing a liquid leakage of an aqueous electrolyte, requiring no battery, and capable of displaying information easily and cheaply by internally generated electric power and remaining the information even after the voltage is stopped applying. An IC card of the present invention has an electric power generator capable of generating electric power by an external stimulus and a display driven by the generated electric power so as to display information. The IC card of the present invention preferably have aspects of that the electric power generator is a piezoelectric transducer, a nonvolatile memory for storing information displayed on the display is provide, the nonvolatile memory is a ferroelectric memory, the display is formed by an electrochromic display device, and the electrochromic display device is an all solid-state electrochromic display device.

Abstract: An excellent fragrance compound having high palatability.

Abstract: A composition includes (A) an alkali-soluble resin; and (B) (b-1) a compound of Formula (I): 1

Abstract: A composition includes (A) an alkali-soluble resin; and (B) (b-1) a compound of Formula (I): 1

Abstract: An authentication circuit containing at least two types of ferroelectrics having different Curie temperatures and properties of retaining charges by residual polarization. An authentication signal stored in one of the ferroelectrics is erased when the ferroelectrics are held in a Curie temperature or more of the one of the ferroelectrics and below a Curie temperature of the ferroelectrics 2. In an authentication circuit, preferably one of the ferroelectrics outputs a primary authentication signal and, when the ferroelectric 2 receives the primary authentication signal, the ferroelectric 2 outputs a secondary authentication signal, and a plurality of ferroelectrics are formed of two or more types of elements and have different element compositions, the two or more elements are selected from Na, K, Ba, Cd, Hf, O, Pb, Zr, Ti, La, Ca, Sr, Tl, Bi, a rare earth element, Nb, Ta, W, Mo, Fe, Co, and Cr.

Abstract: A method of producing a semiconductor device in which a film is formed on a substrate by a chemical vapor deposition (CVD) process, the method comprising purifying a source gas for a film to be formed by selectively removing at least one of components contained in the source gas, which does not pertain to reactions for the deposition of the film, based on the difference in molecular size between the component to be removed and other components.

Abstract: The present invention provides a semiconductor device comprising a single-crystal silicon substrate; and a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon substrate. The single-crystal oxide thin film is directly in contact with a surface of the single-crystal silicon substrate, and contains a bivalent metal that is reactive to silicon.