Abstract: With respect to an opening/closing control device for controlling an opening/closing operation of an opening/closing body driven by a motor, the opening/closing control device includes a current detector, a voltage detector, a processor, and a memory. The processor calculates the speed of the opening/closing body based on a change in the detected position of the opening/closing body, and decreases the pinch threshold value in a case where a state, in which the calculated speed of the opening/closing body is less than or equal to a first predetermined threshold value, and a temporal change in the calculated load is greater than or equal to a second predetermined threshold value and less than or equal to a third predetermined threshold value, continues for a certain period of time or greater.

Abstract: With respect to an opening/closing control device for controlling an opening/closing operation of an opening/closing body driven by a motor, the opening/closing control device includes a current detector, a voltage detector, a processor, and a memory. The processor calculates the speed of the opening/closing body based on a change in the detected position of the opening/closing body, and decreases the pinch threshold value in a case where a state, in which the calculated speed of the opening/closing body is less than or equal to a first predetermined threshold value, and a temporal change in the calculated load is greater than or equal to a second predetermined threshold value and less than or equal to a third predetermined threshold value, continues for a certain period of time or greater.

Abstract: An object of the present invention is to provide a coloring technique for fiber substrates, the technique being capable of imparting metallic luster and further reducing discoloration. The object can be achieved by a laminated sheet comprising a fiber substrate and a metal element- or metalloid element-containing layer, the fiber substrate holding a sealing material.

Abstract: An open/close control device which detects pinching by an open/close body due to driving of a motor, includes a computing unit configured to compute an acceleration term based on a change in a rotational period of the motor, and a load applied to the motor based on the acceleration term, based on a signal indicating the rotation period of the motor, a determination unit configured to determine that the pinching by the open/close body occurred, when the load computed by the computing unit exceeds a predetermined determination value, and a determination value adjusting unit configured to increase the determination value when a local maximum value of the acceleration term exceeds a predetermined threshold value, or the acceleration term becomes less than or equal to a predetermined reference value, or the acceleration term decrease by a predetermined value or more, during a certain period after starting the motor.

Abstract: Disclosed is an electrostatic chuck apparatus which is configured of: an electrostatic chuck section; an annular focus ring section provided to surround the electrostatic chuck section; and a cooling base section which cools the electrostatic chuck section and the focus ring section. The focus ring section is provided with an annular focus ring, an annular heat conducting sheet, an annular ceramic ring, a nonmagnetic heater, and an electrode section that supplies power to the heater.

Abstract: Disclosed is an electrostatic chuck apparatus which is configured of: an electrostatic chuck section; an annular focus ring section provided to surround the electrostatic chuck section; and a cooling base section which cools the electrostatic chuck section and the focus ring section. The focus ring section is provided with an annular focus ring, an annular heat conducting sheet, an annular ceramic ring, a nonmagnetic heater, and an electrode section that supplies power to the heater.

Abstract: Disclosed is an electrostatic chuck apparatus which is configured of: an electrostatic chuck section; an annular focus ring section provided to surround the electrostatic chuck section; and a cooling base section which cools the electrostatic chuck section and the focus ring section. The focus ring section is provided with an annular focus ring, an annular heat conducting sheet, an annular ceramic ring, a nonmagnetic heater, and an electrode section that supplies power to the heater.

Abstract: A plasma processing apparatus includes a vacuum evacuable processing chamber, a first electrode divided into an outer electrode and an inner electrode, a second electrode, a first and a second high frequency power application unit for applying to the second electrode a first and a second high frequency power having a relatively high frequency and a relatively low frequency, respectively, a first and a second DC voltage application circuit apply a DC voltage to the outer and the inner electrode, respectively, and a processing gas supply unit. A space between the first electrode and the second electrode serves as a plasma generation space, and frequency-impedance characteristics of the outer electrode are set such that the impedance increases at the frequency of the second high frequency power and decreases at the frequency of the first high frequency power as the DC voltage applied to the outer electrode increases.

Abstract: Disclosed is an electrostatic chuck apparatus which is configured of: an electrostatic chuck section; an annular focus ring section provided to surround the electrostatic chuck section; and a cooling base section which cools the electrostatic chuck section and the focus ring section. The focus ring section is provided with an annular focus ring, an annular heat conducting sheet, an annular ceramic ring, a nonmagnetic heater, and an electrode section that supplies power to the heater.

Abstract: A plasma processing apparatus includes an inner upper electrode provided to face a lower electrode mounting thereon a substrate, an outer upper electrode provided in a ring shape at a radially outside of the inner upper electrode and electrically isolated from the inner upper electrode in a vacuum evacuable processing chamber and a processing gas supply unit for supplying a processing gas into a processing space between the inner and the outer upper electrode and the lower electrode. A radio frequency (RF) power supply unit is also provide to apply a RF power to the lower electrode or the inner and the outer upper electrode to generate a plasma of the processing gas by RF discharge. A first and a second DC power supply unit are provided to apply a first and a second variable DC voltage to the inner upper electrode, respectively.

Abstract: An electrode structure capable of adequately increasing an electron density in a processing space at a part facing a circumferential edge portion of a substrate. In a processing chamber of a substrate processing apparatus that performs RIE processing on a wafer, an upper electrode of the electrode structure is disposed to face the wafer placed on a susceptor inside the processing chamber. The upper electrode includes an inner electrode facing a central portion of the wafer and an outer electrode facing the circumferential edge portion of the wafer. The inner and outer electrodes are connected with first and second DC power sources, respectively. The outer electrode has its first secondary electron emission surface extending parallel to the wafer and its second secondary electron emission surface obliquely extending relative to the first secondary electron emission surface.

Abstract: A plasma processing apparatus includes an inner upper electrode provided to face a lower electrode mounting thereon a substrate, an outer upper electrode provided in a ring shape at a radially outside of the inner upper electrode and electrically isolated from the inner upper electrode in a vacuum evacuable processing chamber and a processing gas supply unit for supplying a processing gas into a processing space between the inner and the outer upper electrode and the lower electrode. A radio frequency (RF) power supply unit is also provide to apply a RF power to the lower electrode or the inner and the outer upper electrode to generate a plasma of the processing gas by RF discharge. A first and a second DC power supply unit are provided to apply a first and a second variable DC voltage to the inner upper electrode, respectively.

Abstract: A plasma processing apparatus includes a vacuum evacuable processing chamber, a first electrode divided into an outer electrode and an inner electrode, a second electrode, a first and a second high frequency power application unit for applying to the second electrode a first and a second high frequency power having a relatively high frequency and a relatively low frequency, respectively, a first and a second DC voltage application circuit apply a DC voltage to the outer and the inner electrode, respectively, and a processing gas supply unit. A space between the first electrode and the second electrode serves as a plasma generation space, and frequency-impedance characteristics of the outer electrode are set such that the impedance increases at the frequency of the second high frequency power and decreases at the frequency of the first high frequency power as the DC voltage applied to the outer electrode increases.