Abstract: In this semiconductor device, immediate below a mold line M in a surface where an inner lead of a wiring substrate composed of a BT resin impregnated glass cloth or the like is formed, a second solder resist layer is stacked on a first solder resist layer to form a protrusion of a predetermined width. Then, on a predetermined position of the wiring substrate, a semiconductor element is assembled by wire bonding and an assembled part thereof is molded by a resin layer. Further, on the other surface of the wiring substrate, bumps are formed. Such a semiconductor device is separated by use of a slit hole formed on the wiring substrate in advance in conformity with a mold line M. In this structure, in a step of molding, since a resin is not forced outside of a pushing face of a metal mold to form a burr or the like, a thin and small resin molded semiconductor device of excellent appearance and characteristic can be obtained.

Abstract: A semiconductor apparatus has a wiring board having a wiring pattern and a plurality of connection electrodes formed on a surface thereof with the connection electrodes being electrically connected to the wiring pattern. A semiconductor device is mounted on a main surface of the wiring board and electrically connected to the wiring pattern. A resin-sealed structure is formed by a transfer mold for coating the main surface of the wiring board and the semiconductor device and having sides with a predetermined taper angle after coating. Those side edge portions of the resin-sealed structure which contact the main surface of the wiring board are in contact with edge portions of respective sides of the wiring board.