Abstract: A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))×90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))×110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cm2 to 0.5 pieces/cm2 (where x indicates the off angle).

Abstract: A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SiC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

Abstract: A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))×90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))×110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cm2 to 0.5 pieces/cm2 (where x indicates the off angle).

Abstract: Provided is a method of manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a SiC substrate using a SiC-CVD furnace which is installed in a glove box. The method includes a SiC substrate placement step of placing the SiC substrate in the SiC-CVD furnace while circulating gas in the glove box.

Abstract: An epitaxial wafer manufacturing device, including a shield (12), which in addition to being removably attached inside a chamber, is arranged in close proximity to the lower surface of a top plate (3). The shield has a substrate (12a) having an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space (K), and a thin film (12b) that covers the lower surface of the substrate. The surface of the thin film has the shape of surface irregularities corresponding to fine surface irregularities formed in the lower surface of the substrate. When the shield has undergone thermal deformation as a result of being heated by heating means (8), deposits deposited on the lower surface of the shield are inhibited from falling off by the shape of the surface irregularities.

Abstract: Provided is an epitaxial wafer manufacturing device (1) that deposits and grows epitaxial layers on the surfaces of wafers W while supplying a raw material gas to a chamber, wherein a shield (12), arranged in close proximity to the lower surface of a top plate (3) so as to prevent deposits from being deposited on the lower surface of the top plate (3), is removably attached inside the chamber, has an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space K, and has a structure in which it is concentrically divided into a plurality of ring plates (16), (17) and (18) around the opening (13).

Abstract: A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SiC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

Abstract: The method for producing an SiC epitaxial wafer according to the present invention includes: a step of vacuum baking a coated carbon-based material member at a degree of vacuum of 2.0×10?3 Pa or less in a dedicated vacuum baking furnace; a step of installing the coated carbon-based material member in an epitaxial wafer manufacturing apparatus; and a step of placing an SiC substrate in the epitaxial wafer manufacturing apparatus and epitaxially growing an SiC epitaxial film on the SiC substrate.

Abstract: A CVD device including: a chamber containing a substrate having a SiC-film formation surface; a heating mechanism for heating the substrate from a direction opposite the film formation surface; a third supply space (231) for supplying a third raw-material gas containing carbon in a direction (X) toward the substrate from the lateral side of the substrate; a second supply space (221) for supplying a second raw-material gas containing silicon in the direction (X) from the lateral side of the substrate toward the side farther than the third raw-material gas when viewed from the film formation surface; and a blocking gas supply section for supplying a blocking gas for suppressing the upward movement of the third raw-material gas and the second raw-material gas in a second direction from the side facing the film formation surface toward the film formation surface.

Abstract: A method of manufacturing a SiC epitaxial wafer wherein a SiC epitaxial layer is provided on a SiC single crystal substrate having an off angle. The method includes determining a ratio of basal plane dislocations (BPD) which cause stacking faults in a SiC epitaxial film of a prescribed thickness, to basal plane dislocations which are present on a growth surface of the SiC single crystal substrate, determining an upper limit of surface density of basal plane dislocations, preparing a SiC single crystal substrate which has surface density equal to or less than the above upper limit, and forming a SiC epitaxial film on the SiC single crystal substrate under the same conditions as the growth conditions of the epitaxial film used in the step of determining the ratio.

Abstract: A CVD device equipped with a container chamber (100) having an interior space (100a), and containing a substrate in a manner such that the film formation surface thereof faces upward from the bottom side (fifth region (A5)) of the interior space (100a). Silane gas and propane gas are supplied to the interior space (100a). A stainless-steel ceiling (120) is provided on the top of the interior space (100a). The ceiling (120) is provided with first through third partition members (171-173) attached thereto which comprise stainless steel, are positioned so as to extend in the -Z-direction and transect the X-direction, and divide the top side of the interior space (100a) into first through fourth regions (A1-A4). The substrate positioned inside the interior space (100a) is heated to 1600° C. The first through third partition members (171-173) and the ceiling (120) are cooled to 300° C. or lower by a cooling mechanism.

Abstract: Provided is a method of manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a SiC substrate using a SiC-CVD furnace which is installed in a glove box. The method includes a SiC substrate placement step of placing the SiC substrate in the SiC-CVD furnace while circulating gas in the glove box.

Abstract: A SiC epitaxial wafer obtained by forming a SiC epitaxial layer on a 4H—SiC single-crystal substrate that is tilted at an off-angle of 0.4° to 5°, wherein linear density of step bunchings, which are connected to shallow pits which are due to screw dislocation in the SiC epitaxial wafer, is 5 mm?1 or less.

Abstract: Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H—SiC single-crystal substrate having an off-axis angle of 5° or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400° C. and 1600° C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiH4 gas and C3H8 gas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.

Abstract: An epitaxial wafer manufacturing device, including a shield (12), which in addition to being removably attached inside a chamber, is arranged in close proximity to the lower surface of a top plate (3). The shield has a substrate (12a) having an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space (K), and a thin film (12b) that covers the lower surface of the substrate. The surface of the thin film has the shape of surface irregularities corresponding to fine surface irregularities formed in the lower surface of the substrate. When the shield has undergone thermal deformation as a result of being heated by heating means (8), deposits deposited on the lower surface of the shield are inhibited from falling off by the shape of the surface irregularities.

Abstract: Provided is an epitaxial wafer manufacturing device (1) that deposits and grows epitaxial layers on the surfaces of wafers W while supplying a raw material gas to a chamber, wherein a shield (12), arranged in close proximity to the lower surface of a top plate (3) so as to prevent deposits from being deposited on the lower surface of the top plate (3), is removably attached inside the chamber, has an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space K, and has a structure in which it is concentrically divided into a plurality of ring plates (16), (17) and (18) around the opening (13).

Abstract: Provided are a SiC epitaxial wafer in which the surface density of stacking faults is reduced, and a manufacturing method thereof. The method for manufacturing such a SiC epitaxial wafer comprises a step of determining a ratio of basal plane dislocations (BPD), which causes stacking faults in a SiC epitaxial film of a prescribed thickness which is formed on a SiC single crystal substrate having an off angle, to basal plane dislocations which are present on a growth surface of the SiC single crystal substrate, a step of determining an upper limit of surface density of basal plane dislocations on the growth surface of a SiC single crystal substrate used based on the above ratio, and a step of preparing a SiC single crystal substrate which has surface density equal to or less than the above upper limit, and forming a SiC epitaxial film on the SiC single crystal substrate under the same conditions as the growth conditions of the epitaxial film used in the step of determining the ratio.

Abstract: A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SIC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

Abstract: An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.

Abstract: An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.