Abstract: This invention provides for a piezoelectric ceramic composition having a lead-free alkaline niobate piezoelectric ceramic composition with a favorable piezoelectric property. This invention refers to a piezoelectric ceramic composition 10 that is described as composition formula {Lix(K1-yNay)1-x}(Nb1-zSbz)O3 including the additives of the metallic elements Bi and Fe within the range of the following relational expressions: 0.03?x?0.045; 0.5?y?0.58; 0.03?z?0.045; and 0.006?v?w?0.010 whereof v is the additive amount of Bi (molar ratio), and w is the additive amount of Fe (molar ratio).

Abstract: An electromechanical transformation device comprises an alkaline niobate piezoelectric ceramic composition and a rigid body adhered onto the major surface of the piezoelectric ceramic composition. The piezoelectric ceramic composition is made of crystal structures such as orthorhombic crystals formed at the side where the temperature is lower than the orthorhombic-to-tetragonal phase transition temperature, tetragonal crystals formed at the side where the temperature is higher than the orthorhombic-to-tetragonal phase transition temperature as well as at the side where the temperature is lower than the tetragonal-to-cubic phase transition temperature, and the cubic crystals formed at the side where the temperature is higher than the tetragonal-to-cubic phase transition temperature.

Abstract: A piezoceramic composition comprises, as the main phase, a crystalline phase of a perovskite structure signified as formula ABO3, with Element A consisting of one or more elements selected from among K (potassium), Na (sodium) and Li (lithium) and with Element B consisting of one or more elements selected from among Nb (niobium), Ta (tantalum) and Sb (antimony), with Elements A and B comprising other elements as additives. An X-ray diffraction profile of crushed particles of the piezoceramic composition that are 10 ?m or less in diameter has a diffraction peak indicating the presence of the main (single) phase as well as a heterogeneous phase of a crystalline structure signified as formula AsBtOu (s<t<u) but not belonging to the perovskite structure.

Abstract: A negative temperature coefficient thermistor includes a thermistor element containing a transition metal oxide as a main component; internal electrodes disposed in the thermistor element; and external electrodes, electrically connected to the internal electrodes. A method for manufacturing such a thermistor includes providing green ceramic sheets for forming the thermistor element; applying a conductive paste for forming the internal electrodes onto some of the green ceramic sheets to form internal electrode layers; stacking the green ceramic sheets and the green ceramic sheets with the paste to form a green compact; firing the green compact to obtain a fired compact; and forming the external electrodes.

Abstract: A negative temperature coefficient thermistor includes a thermistor element containing a transition metal oxide as a main component; internal electrodes disposed in the thermistor element; and external electrodes, electrically connected to the internal electrodes. A method for manufacturing such a thermistor includes providing green ceramic sheets for forming the thermistor element; applying a conductive paste for forming the internal electrodes onto some of the green ceramic sheets to form internal electrode layers; stacking the green ceramic sheets and the green ceramic sheets with the paste to form a green compact; firing the green compact to obtain a fired compact; and forming the external electrodes.

Abstract: A semiconductor ceramic for thermistors contains zinc oxide and titanium oxide as main components and a predetermined content of manganese. Also, a chip-type thermistor including the semiconductor ceramic is provided. By adding manganese, the resistance-temperature characteristic is controllable in the range of positive temperature coefficient to negative temperature coefficient. Also, by adding nickel, the resistivity is controllable. As a result, a thermistor material which provides a series of semiconductor ceramics having various resistivities and various B constants in a low range, for example 0 to 1,000 K, is available.

Abstract: A semiconductor ceramic for thermistors contains zinc oxide and titanium oxide as main components and a predetermined content of manganese. Also, a chip-type thermistor including the semiconductor ceramic is provided. By adding manganese, the resistance-temperature characteristic is controllable in the range of positive temperature coefficient to negative temperature coefficient. Also, by adding nickel, the resistivity is controllable. As a result, a thermistor material which provides a series of semiconductor ceramics having various resistivities and various B constants in a low range, for example 0 to 1,000 K, is available.