Abstract: A Bi-substituted rare earth iron garnet single crystal has a composition of R3-xBixFe5-wAwO12 (wherein R denotes one or more rare earth elements among Tb, Y, Eu, Gd, Ho, Yb, Lu, Nd, Tm, La, Sm, Dy, Er, Ce, and Pr and inevitably include Tb; A denotes one or more elements among Ga, Al, In, Sc, Co, Ni, Cr, V, Ti, Si, Ge, Mg, Zn, Nb, Ta, Sn, Zr, Hf, Pt, Rh, Te, Os, Ce, and Lu, 0.7<x?1.5, and 0<w?1.5), contains Pt and does not contain Pb, and additionally contains Mn or at least one Group 2 element, wherein the coefficient ? is set at a value within a numerical range of 0.91±0.05 and ? (which means [M]?(?×[Pt])) is set from ?7.23 atppm to 1.64 atppm.

Abstract: A plasma generator (1) comprises: a liquid containing part (3) which contains a liquid (6) including water; a gas containing part (4) which contains a gas; and a partition wall part (5) that separates the liquid containing part and the gas containing part from each other and is provided with a gas passage (5a) through which the gas in the gas containing part is led to the liquid containing part. The plasma generator (1) is also provided with a first electrode (10) that is arranged in the gas containing part and a second electrode (11) that is arranged so as to be in contact with the liquid in the liquid containing part. The plasma generator (1) is further provided with: a gas supply unit (9) which supplies the gas to the gas containing part; a plasma power supply unit (13); and a liquid inflow prevention device (a control unit (14)) which prevents the liquid from flowing into the gas containing part from the liquid containing part through the gas passage.

Abstract: A plasma generator includes: a liquid containing part containing water; a gas containing part; and a partition wall part that separates the liquid containing part and the gas containing part and is provided with a gas passage through which the gas in the gas containing part is led to the liquid containing part. The plasma generator is also provided with a first electrode arranged in the gas containing part and a second electrode arranged to be in contact with the liquid in the liquid containing part. The plasma generator is further provided with: a gas supply unit which supplies the gas to the gas containing part; a plasma power supply unit; and a projected part which serves as a drainage promotion part that prevents the liquid from remaining in the gas passage after the liquid in the liquid containing part is drained.

Abstract: A plasma generator 1 includes: a liquid storage section 4 that stores a liquid containing water; a gas storage section 5 that stores a gas; a partition 3 provided with a gas passage 3a to introduce the gas in the gas storage section 5 into the liquid storage section 4 and separating the liquid storage section 4 from the gas storage section 5; a first electrode 12 provided in the gas storage section 5; and a second electrode 13 separated from the first electrode 12 and provided in a manner such that at least the portion coupled with the first electrode 12 is in contact with the liquid in the liquid storage section 4. A predetermined voltage is applied between the first electrode 12 and the second electrode 13 while the second electrode 13 is grounded.

Abstract: A plasma generator 1 includes a first electrode 12 provided in a gas storage section 5; and a second electrode 13 separated from the first electrode 12 and provided in a manner such that at least the portion coupled with the first electrode 12 is in contact with a liquid 17 in a liquid storage section 4. Electric discharge is caused between the first electrode 12 and the second electrode 13 so as to produce plasma in a gas region in the liquid 17 in the liquid storage section and produce hydroxyl radical from water contained in the liquid 17 and oxygen contained in the gas. A voltage controller 60 controls a voltage applied by a plasma power source 15 depending on conditions.

Abstract: An efficient removal operation of a signal transmission medium is enabled with a simple configuration. A lock mechanism having a latch lock part, which retains an inserted state of the signal transmission medium by engagement with the signal transmission medium inserted in an insulating housing, is provided with an unlock maintaining part, which retains the latch lock part at a detachment position in conjunction with an unlock operation.

Abstract: Provided is a Bi-substituted rare earth iron garnet single crystal which has a composition of R3-xBixFe5-wAwO12, wherein R denotes one or more rare earth elements among Y, Eu, Gd, Ho, Yb, Lu, Nd, Tm, La, Sm, Dy, Er, Ce, and Pr while definitely including Gd, A denotes one or more elements among Ga, Al, In, Sc, Co, Ni, Cr, V, Ti, Si, Ge, Mg, Zn, Nb, Ta, Sn, Zr, Hf, Pt, Rh, Te, Os, Ce, and Lu, 0.7<x?1.5, and 0<w?1.5, does not contain Pb and contains Pt, and additionally contains M which denotes Mn or at least one Group 2 element, wherein a coefficient ? is set to any value within a numerical range of 0.815±0.035 and ? (which means (?×[M])?[Pt]) is set from ?0.40 atppm to 3.18 atppm.

Abstract: An electric shaver includes: a main body; an outer blade provided to an end of the main body and having a blade hole defined by a bar; and an inner blade provided inward of the outer blade and configured to reciprocate in a longitudinal direction of the outer blade to cut hair in the blade hole with the outer blade. The bar has a hair raising portion coming in contact with hair upon movement of the outer blade on a skin surface to raise hair up from the skin surface. A contact pressure on the skin surface to be exerted by the outer blade in a first portion of the outer blade is greater than that in a second portion of the outer blade. Hair raising performance in raising hair up from the skin surface in the first portion is smaller than hair raising performance in the second portion.

Abstract: Sufficient yield strength is achieved against tensile, compressive and shearing forces working on steel frame columns and steel frame girders by using simply configured connective fittings to reduce costs and construction periods. For this purpose, a connective structure of highly rigid steel frame columns and steel frame girders formed by connecting steel frame columns and steel frame girders each having a web part and flange parts with connective fittings is provided. Each of the connective fittings has a bottom plate part and, on a surface of the bottom plate part, side plate parts which rise at a substantially right angle to the bottom plate part and have inserting areas extending farther than a tip of the bottom plate part in the state of rising at the substantially right angle.

Abstract: A method for fabricating a semiconductor device includes the steps of: (a) forming an alloy film containing a precious metal on a substrate having a semiconductor layer or on a conductive film formed on the substrate; (b) heat-treating the substrate to allow the precious metal to react with silicon forming a silicide film containing the precious metal on the substrate or the conductive film; (c) removing an unreacted portion of the alloy film with a first chemical solution after the step (b); (d) forming a silicon oxide film on the top surface of the silicide film including a portion underlying a residue of the precious metal by exposing the substrate to an oxidative atmosphere; and (e) dissolving the residue of the precious metal with a second chemical solution.

Abstract: A method for fabricating a semiconductor device, includes the steps of (a) forming a metal film containing a precious metal on a substrate having a semiconductor layer containing silicon or on a conductive film containing silicon formed on the substrate, (b) after step (a), heat-treating the substrate to allow the precious metal to react with silicon to form a silicide film containing the precious metal on the substrate or the conductive film, (c) after step (b), forming an oxide film on a portion of the silicide film underlying an unreacted portion of the precious metal using a first chemical solution, and (d) dissolving the unreacted portion of the precious metal using a second chemical solution.

Abstract: The step a) of forming a noble metal film or a metal film containing a noble metal on a semiconductor substrate containing silicon or a conductive film containing silicon is performed, the step b) of forming a silicide film containing a noble metal on the semiconductor substrate or the conductive film is performed, after the step a), by performing thermal treatment to the semiconductor substrate, the step c) of activating unreacted part of the noble metal using a first chemical solution is performed after the step b), and the step d) of dissolving the unreacted part of the noble metal activated in the step c) is performed. The step d) is performed within 30 minutes or less after the step c).

Abstract: In an electric rotary machine, a stator, a metallic supporting member configured to support the stator, and a rotor are provided, the rotor is relatively rotatably supported with respect to the stator, a magnetic path is formed via a gap portion between the stator and the rotor to give a torque to the rotor, and a space section is provided to interrupt the magnetic path at a position of the metallic supporting member near to a magnetic pole of the stator facing the gap portion.

Abstract: Sufficient yield strength is achieved against tensile, compressive and shearing forces working on steel frame columns and steel frame girders by using simply configured connective fittings to reduce costs and construction periods. For this purpose, a connective structure of highly rigid steel frame columns and steel frame girders formed by connecting steel frame columns and steel frame girders each having a web part and flange parts with connective fittings is provided. Each of the connective fittings has a bottom plate part and, on a surface of the bottom plate part, side plate parts which rise at a substantially right angle to the bottom plate part and have inserting areas extending farther than a tip of the bottom plate part in the state of rising at the substantially right angle.

Abstract: A groove is formed on a connecting section surface of an electrically conductive terminal, this groove is subjected to a bending deformation into a convex shape toward the surface side from the backside of a connecting section to form a bent convex section on the surface of the connecting terminal, and edge sections formed on both sides of this groove are positioned on the surface of the bent convex section. When joined to a counterpart connecting section, the groove edge sections are displaced to approach one another to provide a wiping effect on the surface of the counterpart connecting section.

Abstract: In an electric rotary machine, a stator, a metallic supporting member configured to support the stator, and a rotor are provided, the rotor is relatively rotatably supported with respect to the stator, a magnetic path is formed via a gap portion between the stator and the rotor to give a torque to the rotor, and a space section is provided to interrupt the magnetic path at a position of the metallic supporting member near to a magnetic pole of the stator facing the gap portion.

Abstract: An axial gap electronic motor includes a stator having a plurality of poles, and a rotor. Each pole is formed of a stator iron core made of a magnet body and a coil wound therearound. The rotor has a plurality of poles formed of permanent magnet and arranged along a rotation axis direction of said rotor with a predetermined gap provided therebetween. The stator has a magnetic force generating section in which a plurality of the stator iron cores is arranged in a ring shape on a concentric circle with the rotation axis line of the rotor being a center axis. Each of teeth of the stator iron core is provided with a skew.

Abstract: A groove is formed on a connecting section surface of an electrically conductive terminal, this groove is subjected to a bending deformation into a convex shape toward the surface side from the backside of a connecting section to form a bent convex section on the surface of the connecting terminal, and edge sections formed on both sides of this groove are positioned on the surface of the bent convex section.

Abstract: A developer carrier for an SLIC developing system includes a developing sleeve and a magnetic roll having a plurality of magnetic poles. A narrow development nip is formed by narrowing the width of a development pole forming a magnet brush and by narrowing a developer rising region in a developing region where a flux density attenuation ratio of the development pole is 40% or more. A half-value width of the flux density of the development pole is 22° or less and the flux density variation rate is 4.0 mT/Deg or more in a circumferential direction in a part where the flux density in at least half of that of a downstream side of a developer carrying direction from a peak magnetic force position of the development pole is 90% or less.

Abstract: A semiconductor device for charge-up damage evaluation and an evaluation method for the same are provided which permit to detect charge-up damage caused by static electricity. There are provided a silicon substrate 9, a first insulation film 10 formed on the silicon substrate 9, a first conductive layer 6 formed on the first insulation film 10 and connected to the silicon substrate 9, a second insulation film 11 formed on the first conductive layer 6, a second conductive layer 8 formed on the second insulation film 11 and serving as an antenna, and a third insulation film 12 formed on the second conductive layer 8.