Abstract: In one embodiment, a method for inspecting an electronic component includes preparing a current detector which is electrically connected to a current detection terminal via a gating device, and electrically connecting the current detection terminal to an interconnect which is in the electronic component and on which a failure portion is suspected to be generated. The method further includes pulsing an electron beam and irradiating the interconnect with the electron beam, and detecting a current generated when the interconnect is irradiated with the electron beam, by the current detector, while adjusting an opening and a closing of a gate in the gating device.

Abstract: An emission analysis device has an image obtaining module configured to obtain a plurality of first images and a plurality of second images by changing multiple times an end test pattern address, the first images being obtained by integrating an emission from a nondefective semiconductor device determined to be nondefective by a function test while test patterns from a predetermined start test pattern address to the end test pattern address are inputted to the nondefective semiconductor device, the second images being obtained by integrating an emission from a defective semiconductor device determined to be defective by the function test while the test patterns from the predetermined start test pattern address to the end test pattern address are inputted to the defective semiconductor device, and a comparator configured to compare each of the first images with each of the second images by the end test pattern address to determine whether there is a difference between the first images and the second images.

Abstract: In one embodiment, a method for inspecting an electronic component includes preparing a current detector which is electrically connected to a current detection terminal via a gating device, and electrically connecting the current detection terminal to an interconnect which is in the electronic component and on which a failure portion is suspected to be generated. The method further includes pulsing an electron beam and irradiating the interconnect with the electron beam, and detecting a current generated when the interconnect is irradiated with the electron beam, by the current detector, while adjusting an opening and a closing of a gate in the gating device.

Abstract: An emission analysis device has an image obtaining module configured to obtain a plurality of first images and a plurality of second images by changing multiple times an end test pattern address, the first images being obtained by integrating an emission from a nondefective semiconductor device determined to be nondefective by a function test while test patterns from a predetermined start test pattern address to the end test pattern address are inputted to the nondefective semiconductor device, the second images being obtained by integrating an emission from a defective semiconductor device determined to be defective by the function test while the test patterns from the predetermined start test pattern address to the end test pattern address are inputted to the defective semiconductor device, and a comparator configured to compare each of the first images with each of the second images by the end test pattern address to determine whether there is a difference between the first images and the second images.

Abstract: A sample stage is provided with first to fourth plates. Each of the first to fourth plates has a first side surface and a second side surface. The first and the second side surfaces are adjacent to each other. The first and the second side surfaces extend perpendicularly to each other. The second side surface of the second plate is in contact with the first side surface of the first plate. The second side surface of the third plate is in contact with the first side surface of the second plate. The second side surface of the fourth plate is in contact with the first side surface of the third plate. The second side surface of the first plate is in contact with the first side surface of the fourth plate. A first rectangular opening is formed by the first side surfaces of the first to fourth plates.