Abstract: To provide a display device capable of further improving reliability of the display device with respect to manufacturing variations, wavelength variations of light sources, and active variations (variations due to external factors). There is provided a display device including at least a light source, a first hologram, and a second hologram, in which the first hologram compensates for dispersion of light emitted from the light source and diffracts and emits the light, the second hologram diffracts the light diffracted with compensated dispersion, and emits the light in a direction of a pupil of a user, and the first hologram has an intensity distribution of different diffraction efficiency with respect to a wavelength of the light emitted from the light source depending on a position in a plane of the first hologram.

Abstract: A base material for a printed circuit board includes: an insulating base film; and a sintered body layer of metal particles layered on one side surface of the base film; wherein an arithmetic mean roughness (Sa) of a surface of the sintered body layer that is opposite to the base film is greater than or equal to 0.005 ?m and less than or equal to 0.10 ?m.

Abstract: According to the present invention, a base material for a printed circuit board includes: an insulating base film; and a metal layer that is layered on at least one surface of the base film and that includes copper as a main component, wherein in a content per unit area in a region of 100 nm or less from an interface of the metal layer with the base film, Cr<0.1 mg/m2, and Ni<0.1 mg/m2, wherein an arithmetic mean roughness (Sa) of the surface of the base film on which the metal layer is layered is less than 0.10 ?m.

Abstract: According to the present invention, a base material for a printed circuit board includes: an insulating base film; and a metal layer that is layered on at least one surface of the base film and that includes copper as a main component, wherein in a content per unit area in a region of 100 nm or less from an interface of the metal layer with the base film, Cr<0.1 mg/m2, and Ni<0.1 mg/m2, wherein an arithmetic mean roughness (Sa) of the surface of the base film on which the metal layer is layered is less than 0.10 ?m.

Abstract: A base material for a printed circuit board includes: an insulating base film; and a sintered body layer of metal particles layered on one side surface of the base film; wherein an arithmetic mean roughness (Sa) of a surface of the sintered body layer that is opposite to the base film is greater than or equal to 0.005 ?m and less than or equal to 0.10 ?m.

Abstract: A coating liquid for forming a conductive layer according to the present invention is a coating liquid for forming a conductive layer, the coating liquid containing fine metal particles, a dispersant, and a dispersion medium. In the coating liquid for forming a conductive layer, the fine metal particles contain copper or a copper alloy as a main component, the dispersant is a polyethyleneimine-polyethylene oxide graft copolymer, a polyethyleneimine moiety in the graft copolymer has a weight-average molecular weight of 300 or more and 1,000 or less, a molar ratio of polyethylene oxide chains to nitrogen atoms in the polyethyleneimine moiety is 10 or more and 50 or less, and the graft copolymer has a weight-average molecular weight of 3,000 or more and 54,000 or less.

Abstract: A powder for a conductive material according to an embodiment of the present invention includes a large number of particles that contain copper as a main component and having an average primary particle diameter of 1 nm or more and 200 nm or less. The particles contain titanium on surfaces or inside thereof, and a content of the titanium is 0.003 atomic percent or more and 0.5 atomic percent or less.

Abstract: A coating liquid for forming a conductive layer according to the present invention is a coating liquid for forming a conductive layer, the coating liquid containing fine metal particles, a dispersant, and a dispersion medium. In the coating liquid for forming a conductive layer, the fine metal particles contain copper or a copper alloy as a main component, the dispersant is a polyethyleneimine-polyethylene oxide graft copolymer, a polyethyleneimine moiety in the graft copolymer has a weight-average molecular weight of 300 or more and 1,000 or less, a molar ratio of polyethylene oxide chains to nitrogen atoms in the polyethyleneimine moiety is 10 or more and 50 or less, and the graft copolymer has a weight-average molecular weight of 3,000 or more and 54,000 or less.

Abstract: A powder for a conductive material according to an embodiment of the present invention includes a large number of particles that contain copper as a main component and having an average primary particle diameter of 1 nm or more and 200 nm or less. The particles contain titanium on surfaces or inside thereof, and a content of the titanium is 0.003 atomic percent or more and 0.5 atomic percent or less.

Abstract: A coating liquid for forming a conductive layer according to an embodiment of the present invention contains fine metal particles, a dispersion medium, and a dispersant. The coating liquid has a pH of 4 or more and 8 or less, an electrical conductivity of 100 ?S/cm or more and 800 ?S/cm or less, and a content of the fine metal particles of 20% by mass or more and 80% by mass or less. A method for manufacturing a conductive layer according to another embodiment of the present invention is a method for manufacturing a conductive layer using a coating liquid for forming a conductive layer, the coating liquid containing fine metal particles, a dispersion medium, and a dispersant. The method includes an application step of applying the coating liquid for forming a conductive layer, and a heating step of heating the coating liquid for forming a conductive layer after application.

Abstract: A method for manufacturing a titanium trichloride solution according to an embodiment of the present invention is a method for manufacturing a titanium trichloride solution, the method including reducing titanium tetrachloride in an electrolyte solution by using an ion-exchange electrolytic reduction method. In the method, an aqueous solution containing sulfate ions is used as an electrolyte solution on the anode side. A device for manufacturing a titanium trichloride solution according to another embodiment of the present invention is a device for manufacturing a titanium trichloride solution by electrolytic reduction of titanium tetrachloride in an aqueous solution.

Abstract: There is provided a screen that, as a screen suitable for an interactive board, can output video image light incident obliquely from the back surface side to a viewer side to display a reflection-free image and, at the same time, can realize easy handwriting on the screen surface on the viewer side. To this end, a transmission screen for an interactive board is provided that comprises at least a Fresnel lens sheet comprising a prism part on its incident light side, a light diffusing member provided on the Fresnel lens on its surface side remote from the prism part, and a hard coat layer provided on the outgoing light side of the light diffusing member.

Abstract: There is provided a screen that, as a screen suitable for an interactive board, can output video image light incident obliquely from the back surface side to a viewer side to display a reflection-free image and, at the same time, can realize easy handwriting on the screen surface on the viewer side. To this end, a transmission screen for an interactive board is provided that comprises at least a Fresnel lens sheet comprising a prism part on its incident light side, a light diffusing member provided on the Fresnel lens on its surface side remote from the prism part, and a hard coat layer provided on the outgoing light side of the light diffusing member.

Abstract: A compound semiconductor wafer providing an InGaAs light receiving layer having superior crystal characteristic suitable for a near-infrared sensor includes an InAsxP1-x graded buffer layer consisting of a plurality of layers positioned on an InP substrate and an InAsyP1-y buffer layer positioned on the graded buffer layer, sandwiched between said InP substrate and the InGaAs layer, wherein maximum value of PL light emission intensity at an interface of each of the layers of the graded buffer layer and the buffer layer is, at every interface, smaller than 3/10 of the maximum PL light emission intensity of the buffer layer.

Abstract: A compound semiconductor wafer providing an InGaAs light receiving layer having superior crystal characteristic suitable for a near-infrared sensor includes an InAsxP1-x graded buffer layer consisting of a plurality of layers positioned on an InP substrate and an InAsyP1-y buffer layer positioned on the graded buffer layer, sandwiched between said InP substrate and the InGaAs layer, wherein maximum value of PL light emission intensity at an interface of each of the layers of the graded buffer layer and the buffer layer is, at every interface, smaller than 3/10 of the maximum PL light emission intensity of the buffer layer.

Abstract: A semiconductor light receiving element has a semiconductor portion. The semiconductor portion includes a substrate, a light detecting portion, and a filter portion. The substrate, the light detecting portion, and the filter portion are provided sequentially in a direction of a predetermined axis. The light detecting portion has a light absorbing layer including a III-V semiconductor layer, a window layer including a III-V semiconductor layer, and an anode semiconductor region. The light absorbing layer is an n or i conductivity type semiconductor layer. The light absorbing layer is provided between a III-V semiconductor layer and the window layer. The light detecting portion is provided on one face of the semiconductor substrate with the III-V semiconductor layer interposed therebetween. The filter portion includes InGaAsP semiconductor layers and III-V semiconductor layers.

Abstract: A semiconductor light receiving element has a semiconductor portion. The semiconductor portion includes a substrate, a light detecting portion, and a filter portion. The substrate, the light detecting portion, and the filter portion are provided sequentially in a direction of a predetermined axis. The light detecting portion has a light absorbing layer including a III-V semiconductor layer, a window layer including a III-V semiconductor layer, and an anode semiconductor region. The light absorbing layer is an n or i conductivity type semiconductor layer. The light absorbing layer is provided between a III-V semiconductor layer and the window layer. The light detecting portion is provided on one face of the semiconductor substrate with the III-V semiconductor layer interposed therebetween. The filter portion includes InGaAsP semiconductor layers and III-V semiconductor layers.

Abstract: A water-absorbing sheet assembly comprises two sheets, at least one of which is a water-permeable sheet, and a polymeric absorbent inserted between said two sheets, wherein at least a part of said two sheets are pressed and bonded to each other.

Abstract: A porous sheet is disclosed that comprises a thin, flexible sheet made of thermoplastic resin having solid particles distributed therein. Small spaces are formed around the particles, such that abrasion or buffing of the opposite surfaces of the sheet causes the formation of a multitude of fine pores that extend through the sheet, making the sheet vapor-permeable but liquid-impermeable.

Abstract: A porous sheet comprising a flexible sheet in which a rigid substance is incorporated, wherein pores are formed in the sheet by breaking the rigid substance.