Abstract: A semiconductor device includes a circuit substrate which is configured with an insulative substrate formed of a ceramic material and provided on its one surface with an electrode formed of a copper material, and a power semiconductor element bonded with the electrode using a sinterable silver-particle bonding material, wherein the electrode has a Vickers hardness of 70 HV or more in its portion from the bonding face with the power semiconductor element toward the insulative substrate to a depth of 50 ?m, and has a Vickers hardness of 50 HV or less in its portion at the side toward the insulative substrate.

Abstract: The present invention provides a control apparatus for a video display which can change the order of addresses of a video memory (2) as desired, and there is provided an address translator which is written with a translation data of an address from CPU (3) for accessing the video memory (2), the translation data representing addresses generated by a display controller (1) sequentially in the order of laster scanning and being changed with the contents to be written in the video memory (2), and outputs the translation data as a translated address of the address from CPU (3) to the video memory (2).