Abstract: A plasma etching apparatus includes: a housing defining a plasma processing chamber; a workpiece retaining unit disposed within the plasma processing chamber of the housing and retaining a workpiece on an upper surface of the workpiece retaining unit; a processing gas injecting unit injecting a processing gas for plasma generation onto the workpiece retained by the workpiece retaining unit, the processing gas injecting unit including a processing gas jetting portion; a processing gas supply unit supplying the processing gas to the processing gas injecting unit; and a pressure reducing unit reducing a pressure within the plasma processing chamber. The processing gas jetting portion of the processing gas injecting unit includes a central injecting portion and a peripheral injecting portion surrounding the central injecting portion.

Abstract: A wafer processing method includes forming a resist film on the front side of a wafer in an area except division lines, plasma etching the wafer to form a groove on the front side of the wafer along each division line, the groove having a depth greater than a finished thickness, removing the resist film from the front side of the wafer by cleaning, and grinding the back side of the wafer to reduce the thickness of the wafer to the finished thickness, so that the groove is exposed to the back side of the wafer to thereby divide the wafer into individual device chips. In the resist film removing step, a chemical fluid is sprayed to the resist film formed on the front side of the wafer, thereby removing the resist film.

Abstract: A wafer processing method includes forming a resist film on the front side of a wafer in an area except division lines, plasma etching the wafer to form a groove on the front side of the wafer along each division line, the groove having a depth greater than a finished thickness, removing the resist film from the front side of the wafer by cleaning, and grinding the back side of the wafer to reduce the thickness of the wafer to the finished thickness, so that the groove is exposed to the back side of the wafer to thereby divide the wafer into individual device chips. In the resist film removing step, a chemical fluid is sprayed to the resist film formed on the front side of the wafer, thereby removing the resist film.

Abstract: A workpiece has a plurality of low-dielectric-constant insulation films and a metallic pattern stacked on a surface of a semiconductor substrate. Devices are formed in a plurality of regions partitioned by streets formed in a grid pattern. Surfaces of the devices formed on the workpiece are covered with a surface protective member, leaving the streets exposed. A dispersion of abrasive grains in an etching liquid capable of dissolving the metallic pattern is blasted against the workpiece together with compressed gas so as to remove the low-dielectric-constant insulation films and the metallic pattern on the streets, thereby exposing the semiconductor substrate. The workpiece is divided with the semiconductor substrate exposed by the wet blasting step subjected to dry etching so as to divide the workpiece along the streets.

Abstract: A plasma etching apparatus includes: a housing defining a plasma processing chamber; a workpiece retaining unit disposed within the plasma processing chamber of the housing and retaining a workpiece on an upper surface of the workpiece retaining unit; a processing gas injecting unit injecting a processing gas for plasma generation onto the workpiece retained by the workpiece retaining unit, the processing gas injecting unit including a processing gas jetting portion; a processing gas supply unit supplying the processing gas to the processing gas injecting unit; and a pressure reducing unit reducing a pressure within the plasma processing chamber. The processing gas jetting portion of the processing gas injecting unit includes a central injecting portion and a peripheral injecting portion surrounding the central injecting portion.

Abstract: A safety valve of the invention including a cleavable groove is provided in a battery case of a sealed battery containing a power generating element inside. The cleavable groove is partly formed with a measuring groove having a width wider than other portions. Even if other portions of the cleavable groove have fairly small groove width, a groove width of the cleavable groove can be obtained and determined the quality by measuring a groove width of the measuring groove. Thereby, a safety valve and a manufacturing method thereof, a sealed battery and a manufacturing method thereof, a vehicle, and a battery mounting device are provided to achieve less variation of valve opening pressure and stable product quality, as well as reliably assure the good quality.

Abstract: A safety valve of the invention including a cleavable groove is provided in a battery case of a sealed battery containing a power generating element inside. The cleavable groove is partly formed with a measuring groove having a width wider than other portions. Even if other portions of the cleavable groove have fairly small groove width, a groove width of the cleavable groove can be obtained and determined the quality by measuring a groove width of the measuring groove. Thereby, a safety valve and a manufacturing method thereof, a sealed battery and a manufacturing method thereof, a vehicle, and a battery mounting device are provided to achieve less variation of valve opening pressure and stable product quality, as well as reliably assure the good quality.

Abstract: A novel signal transduction factor and a gene encoding the same are provided. The present novel signal transduction factor has, for example, the amino acid sequence set forth in SEQ ID NO: 4, and the DNA sequence encoding the factor has, for example, the sequence set forth in SEQ ID NO: 1.

Abstract: A door includes an apparatus for reducing smoke associated therewith. The door is particularly advantageous in reducing smoke in a fire to thereby allow a firefighter or a victim trapped in a fire to readily indentify an exit. The door includes a nozzle or plurality of nozzles mounted upon the door, with a liquid source connected to the nozzle. Preferably, the door additionally includes a supply of pressurized water therein, with a surface active agent in an amount of 0.

Abstract: A method is provided for synthesizing high temperature alloys from elemental powders. The method includes the steps of placing the elemental powders to be processed in a die. A relatively high pressure is then applied to the powders. Substantially simultaneously, an electrical discharge is applied to the powders. The discharge is of relatively high voltage and current density to provide alloying. A product fabricated by the present method is also described and claimed.

Abstract: The invention provides an aluminum based alloy consisting essentially of the formula Al.sub.bal Fe.sub.a X.sub.b, wherein X is at least one element selected from the group consisting of Zn, Co, Ni, Cr, Mo, V, Zr, Ti, Y and Ce, "a" ranges from about 7-15 wt %, "b" ranges from about 2-10 wt % and the balance is aluminum. The alloy has a predominately microeutectic microstructure. The invention also provides a method and apparatus for forming rapidly solidifed metal, such as the metal alloys of the invention, within an ambient atmosphere. Generally stated, the apparatus includes a moving casting surface which has a quenching region for solidifying molten metal thereon. A reservoir holds molten metal and has orifice means for depositing a stream of molten metal onto the casting surface quenching region. A heating mechanism heats the molten metal contained within the reservoir, and a gas source provides a non-reactive gas atmosphere at the quenching region to minimize oxidation of the deposited metal.

Abstract: A method for fabricating relatively dense monoliths of superconducting material and relatively dense composite monoliths of superconducting material and binder material. The method includes the steps of placing the material to be processed in a die. A relatively high pressure is then applied to the material. Substantially simultaneously, an electrical discharge is applied to the material. The discharge is of a relatively high voltage and current density to provide sharp bonding while maintaining the superconducting properties of the material in the monolith product. A product fabricated by the present method is also described.

Abstract: The invention provides an aluminum based alloy consisting essentially of the formula Al.sub.bal Fe.sub.a X.sub.b, wherein X is at least one element selected from the group consisting of Zn, Co, Ni, Cr, M, V, Zr, Ti, Y, Si and Ce, "a" ranges from about 7-15 wt %, "b" ranges from about 1.5-10 wt % and the balance is aluminium. The alloy has a predominately microeutectic microstructure.The invention provides a method and apparatus for forming rapidly solidified metal within an ambient atmosphere, the rapidly solidified metal being an aluminum based alloy. Generally stated, the apparatus includes a moving casting surface which has a quenching region for solidifying molten metal thereon. A reservoir holds the molten metal and has orifice means for depositing a stream of the molten metal onto the casting surface quenching region.

Abstract: A method for sintering and forming powder is disclosed. In this method a high voltage of 3 KV or more is applied to a mold filled with powder using an electrode which maintains a high current of 50 KA cm.sup.-2 or greater for a period of time from 10 to 500 microseconds. A device for practicing this method is also disclosed.

Abstract: The present invention provides a method for producing an aluminum alloy which includes the step of carbo-thermically reducing an aluminous material to provide an alloy consisting essentially of the formula Al.sub.bal TM.sub.d Si.sub.e, wherein TM is at least one element selected from the group consisting of Fe, Ni, Co, Ti, V, Zr, Cu and Mn, "d" ranges from about 2-20 wt %, "e" ranges from about 2.1-20 wt %, and the balance is aluminum and incidental impurities. The alloy is placed in the molten state and rapidly solidified at a quench rate of at least about 10.sup.6 K/sec to produce a rapidly solidified alloy composed of a predominately microeutectic and/or microcellular structure.

Abstract: The invention provides an aluminum based alloy consisting essentially of the formula Al.sub.bal Fe.sub.a X.sub.b, wherein X is at least one element selected from the group consisting of Zn, Co, Ni, Cr, Mo, V, Zr, Ti, Y and Ce, "a" ranges from about 7-15 wt. %, "b" ranges from about 2-10 wt. % and the balance is aluminum. The alloy has a predominately microeutectic microstructure, and is produced by a method and apparatus for forming rapidly solidified metal within an ambient atmosphere. Generally stated, the apparatus includes a moving casting surface which has a quenching region for solidifying molten metal thereon. A reservoir holds molten metal and has orifice means for depositing a stream of molten metal onto the casting surface quenching region. A heating mechanism heats the molten metal contained within the reservoir, and a gas source provides a non-reactive gas atmosphere at the quenching region to minimize oxidation of the deposited metal.

Abstract: The invention provides an aluminum based alloy consisting essentially of the formula Al.sub.bal Fe.sub.a X.sub.b, wherein X is at least one element selected from the group consisting of Zn, Co, Ni, Cr, Mo, V, Zr, Ti, Y, Si and Ce, "a" ranges from about 7-15 wt %, "b" ranges from about 1.5-10 wt % and the balance is aluminum. The alloy has a predominately microeutectic microstructure.The invention also provides a method and apparatus for forming rapidly solidified metal, such as the metal alloys of the invention, within an ambient atmosphere. Generally stated, the apparatus includes a moving casting surface which has a quenching region for solidifying molten metal thereon. A reservoir holds molten metal and has orifice means for depositing a stream of molten metal onto the casting surface quenching region. A heating mechanism heats the molten metal contained within the reservoir, and a gas source provides a non-reactive gas atmosphere at the quenching region to minimize oxidation of the deposited metal.

Abstract: The present invention provides a method for producing an aluminum alloy which includes the step of carbothermically reducing an aluminous material to provide an alloy consisting essentially of the formula Al.sub.bal TM.sub.d Si.sub.e, wherein TM is at least one element selected from the group consisting of Fe, Ni, Co, Ti, V, Zr, Cu and Mn, "d" ranges from about 2-20 wt %, "e" ranges from about 2.1-20 wt %, and the balance is aluminum and incidental impurities. The alloy is placed in the molten state and rapidly solidified at a quench rate of at least about 10.sup.6 K/sec to produce a rapidly solidified alloy composed of a predominately microeutectic and/or microcellular structure.

Abstract: The invention provides an aluminum based alloy consisting essentially of the formula Al.sub.bal Fe.sub.a V.sub.b X.sub.c, wherein X is at least one element selected from the group consisting of Zn, Co, Ni, Cr, Mo, Zr, Ti, Hf, Y and Ce, "a" ranges from about 7-15 wt %, "b" ranges from about 2-10 wt %, "c" ranges from about 0-5 wt % and the balance is aluminum. The alloy has a distinctive microstructure which is at least about 50% composed of a generally spherical, intermetallic O-phase.Particles composed of the alloys of the invention can be heated in a vacuum and compacted to form a consolidated metal article have high strength and good ductility at both room temperature and at elevated temperatures of about 350.degree. C. The consolidated article is composed of an aluminum solid solution phase containing a substantially uniform distribution of dispersed intermetallic phase precipitates therein.

Abstract: The present invention provides a low density aluminum-base alloy, consisting essentially of the formula Al.sub.bal Zr.sub.a Li.sub.b Mg.sub.c T.sub.d, wherein T is at least one element selected from the group consisting of Cu, Si, Sc, Ti, V, Hf, Be, Cr, Mn, Fe, Co and Ni, "a" ranges from about 0.25-2 wt %, "b" ranges from 2.7-5 wt %, "c" ranges from about 0.5-8 wt %, "d" ranges from about 0.5-5% and the balance is aluminum. The alloy has a primary, cellular-dendritic, fine-grained, supersaturated aluminum alloy solid solution phase with intermetallic phases of the constituent elements uniformly dispersed therein. A consolidated article can be produced by compacting together particles composed of the aluminum alloy of the invention in a vacuum at elevated temperature. The compacted alloy is solutionized by heat treatment, quenched in a fluid bath, and optionally, stretched and aged.