Abstract: A stem cell which can be differentiated to a hepatic cell, a pancreas cell or to a salivary gland cell is disclosed. The stem cell according to the present invention is originated from salivary gland duct epithelium, which can be differentiated to an alpha-fetoprotein-positive cell, an albumin-positive cell, an amylase-positive cell, an insulin-positive cell and a glucagon-positive cell by culture in vitro. By transplanting the stem cells according to the present invention, organs such as liver can be regenerated.

Abstract: In a structure for mounting and dismounting an equipment unit from an apparatus body including a plate-like frame formed with a slot at a preselected end and a bore contiguous with the slot for receiving the equipment unit via the slot, the equipment unit includes a front panel and a pair of mounting members. The mounting members are positioned at opposite sides of the front panel, and each contacts, when the equipment unit is received in the apparatus body, the inner periphery of the frame at one end and is exposed to the outside of apparatus body at the other end. The mounting members each are rotatable in a direction in which the equipment unit is inserted into the apparatus body.

Abstract: A first processing unit group for performing solution processing and a second processing unit group including heat and cooling processing units each having a heat processing unit and a cooling processing unit are arranged adjacent to each other such that the cooling processing unit is located on the first processing unit group side. This makes it possible to conduct temperature control precisely in a solution processing unit for performing solution processing for a substrate at about room temperature.

Abstract: This invention relates to an apparatus wherein a vacuum chamber is divided into two spaces, the substrate heating space and the crystal growth space, so that the degree of vacuum in the substrate heating space is set lower than the pressure for the Si growth and the degree of vacuum in the crystal space is set corresponding to the pressure for Si growth to thereby grow Si based semiconductor with excellent reproducibility over a long period. Moreover, heat efficiency toward the substrate is heightened by enclosing the upside and the circumference of the heating means with the heat shielding body to cut energy cost.

Abstract: This invention relates to an apparatus wherein a vacuum chamber is divided into two spaces, the substrate heating space and the crystal growth space, so that the degree of vacuum in the substrate heating space is set lower than the pressure for the Si growth and the degree of vacuum in the crystal space is set corresponding to the pressure for Si growth to thereby grow Si based semiconductor with excellent reproducibility over a long period. Moreover, heat efficiency toward the substrate is heightened by enclosing the upside and the circumference of the heating means with the heat shielding body to cut energy cost.

Abstract: A reactant gas is fed to a dispersing chamber which is disposed under a reaction chamber, and both disposed within a vacuum chamber. The reactant gas is dispersed and then fed through a plurality of communicating holes to the reaction chamber. A second reactant gas is fed to a lower dispersing chamber. After dispersion, this second gas is fed through pipes through the first dispersing chamber and into the reaction chamber around the first reaction gas. Said first reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the first reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via communicating holes.

Abstract: The present invention relates to an apparatus for producing semiconductors utilizing vacuum chemical epitaxy (VCE) method.Said VCE method has a high utilization efficiency of reactant gas and can finish the surface of a semiconductor layer formed on the surface of a substrate smoothly in comparision with a conventional Metalorganic Chemical Vapor Deposition Method(MOCVD). However, in case of forming semiconductor layer on the surface of a substrate with a large area, it is impossible to form homogeneous semiconductor layer.According to the present invention, a reactant gas dispersing chamber is disposed under a reaction chamber disposed within a vacuum chamber, the both chambers are communicated by a plurality of communicating holes, a feeding pipe for supplying reactant gas is extended into the reactant gas dispersing chamber, an end opening thereof is faced downward and a color portion is formed in parallel at the circumference of the end opening.