Abstract: A semiconductor device includes a semiconductor substrate and a first memory cell disposed on the semiconductor substrate. The first memory cell includes a first write and erasure transistor, a first read transistor, and a first charge transfer reduction transistor. The first write and erasure transistor controls data writing and erasing. The first read transistor controls data reading. The first charge transfer reduction transistor reduces injection of an electric charge to the first write and erasure transistor and the first read transistor.

Abstract: A semiconductor non-volatile memory, a data-writing method, a semiconductor non-volatile memory fabrication method and a medium storing a data-writing program that are capable of suppressing a change, due to an operation of memorization of data to a charge accumulation portion, in data which has been memorized at another charge accumulation portion in the same memory cell. Data units which are objects of memorization are memorized to first and second charge accumulation portions of a memory cell by power being supplied in accordance with the data units and charges being accumulated at the first and second charge accumulation portions, in descending order of sizes of charge amounts that are to be accumulated.

Abstract: A semiconductor non-volatile memory, a data-writing method, a semiconductor non-volatile memory fabrication method and a medium storing a data-writing program that are capable of suppressing a change, due to an operation of memorization of data to a charge accumulation portion, in data which has been memorized at another charge accumulation portion in the same memory cell. Data units which are objects of memorization are memorized to first and second charge accumulation portions of a memory cell by power being supplied in accordance with the data units and charges being accumulated at the first and second charge accumulation portions, in descending order of sizes of charge amounts that are to be accumulated.