Abstract: An image processing device includes a first acquisition unit, a second acquisition unit, a correction unit, and a control unit. The first acquisition unit acquires a real space image obtained by capturing a real space and first image quality information, which is image quality information on the real space image. The second acquisition unit acquires a virtual object and second image quality information, which is image quality information on the virtual object. The correction unit corrects image quality of the real space image and image quality of the virtual object based on the first image quality information and the second image quality information. The control unit controls a display to display a combined image obtained by combining the real space image and the virtual object whose image qualities are corrected by the correction unit.

Abstract: A substrate bonding system in one manner of the present disclosure includes a surface treatment module configured to perform plasma processing on a surface of a substrate. The substrate bonding system includes a deposition module coupled to the surface treatment module such that the substrate is transferred to the deposition module without being exposed to atmosphere, the deposition module being configured to perform a deposition process on the substrate on which the plasma processing is performed in the surface treatment module. The substrate bonding system includes a bonding module coupled to the deposition module such that the substrate is transferred to the bonding module without exposing the substrate to the atmosphere, the bonding module being configured to bond substrates on which the deposition process is performed in the deposition module, to form a bonded body.

Abstract: The present invention eliminates meaningless searching for an object, and increases the probability that an image the user likes can be obtained. An image capturing apparatus comprises an image capturing device configured to capture an object image, an object detection unit configured to detect an object from image data captured by the image capturing device, a state detection unit configured to detect information pertaining to a state in which the image capturing apparatus is being held, and a control unit configured to control a range in which the object detection unit searches for an object, on the basis of state information of the image capturing apparatus detected by the state detection unit.

Abstract: The present disclosure provides a technique capable of controlling a shape of an SAM. Provided is a method of forming a target film on a substrate, wherein the method includes preparing a substrate including a layer of a first conductive material formed on a surface of a first region, and a layer of an insulating material formed on a surface of a second region; forming carbon nanotubes on a surface of the layer of the first conductive material; and supplying a raw material gas for a self-assembled film to form the self-assembled film in a region of the surface of the layer of the first conductive material in which the carbon nanotubes have not been formed.

Abstract: The present invention eliminates meaningless searching for an object, and increases the probability that an image the user likes can be obtained. An image capturing apparatus comprises an image capturing device configured to capture an object image, an object detection unit configured to detect an object from image data captured by the image capturing device, a state detection unit configured to detect information pertaining to a state in which the image capturing apparatus is being held, and a control unit configured to control a range in which the object detection unit searches for an object, on the basis of state information of the image capturing apparatus detected by the state detection unit.

Abstract: A film formation method for selectively forming a film on a substrate includes: a preparation step of preparing a substrate having a surface on which a first film and a second film are exposed; a first film forming step of supplying a compound for forming a self-assembled monolayer onto the substrate to form the self-assembled monolayer on the first film, the compound having a functional group including fluorine and carbon and suppressing formation of a third film; a second film forming step of forming the third film on the second film; and a first removal step of removing the third film formed in a vicinity of the self-assembled monolayer by irradiating the surface of the substrate with ions or active species, wherein the third film is a film which forms a volatile compound more easily than the first film by being bonded to fluorine and carbon in the self-assembled monolayer.

Abstract: The present invention eliminates meaningless searching for an object, and increases the probability that an image the user likes can be obtained. An image capturing apparatus comprises an image capturing device configured to capture an object image, an object detection unit configured to detect an object from image data captured by the image capturing device, a state detection unit configured to detect information pertaining to a state in which the image capturing apparatus is being held, and a control unit configured to control a range in which the object detection unit searches for an object, on the basis of state information of the image capturing apparatus detected by the state detection unit.

Abstract: A cap assembly for a cultivation bottle for growing mushrooms is provided. The cap assembly (10) includes a bottle fitting member (20) configured to fit onto a mouth part (54) of the cultivation bottle (50) and a bowl-shaped member (30) configured to be placed on the bottle fitting member. The cap assembly being connected to the bottle prior to fruiting such that the mushrooms grow up through the mouth of the bottle and the attached cap assembly. The bowl-shaped member being separable from the bottle and attached bottle fitting member to facilitate harvesting of the mushroom fruiting bodies and removal of a section of the elongated hard tip portion.

Abstract: An image processing apparatus comprises a first acquisition unit configured to acquire an image shot by continuous shooting while emitting a flash; a second acquisition unit configured to acquire light emission information of the flash in the continuous shooting; a detection unit configured to detect a light emission variation of the flash based on the light emission information; a setting unit configured to set a parameter of a virtual light source for correcting a variation of brightness of the image shot by the continuous shooting due to the light emission variation based on a result of detecting the light emission variation; and a correction unit configured to correct the image shot by the continuous shooting based on the set parameter of the virtual light source.

Abstract: A substrate processing method includes: (a) carrying a substrate having a first film with a recess, and a mask into a first chamber; (b) adjusting the substrate temperature to 200° C. or higher; (c-1) supplying silicon-containing reactive species into the first chamber, thereby adsorbing the species onto the side wall of the recess; and (c-2) supplying nitrogen-containing reactive species into the first chamber, thereby forming a second film on the side wall of the recess; (d) carrying the substrate into a second chamber; and (e) adjusting the substrate temperature to 100° C. or lower; and (f) etching the bottom of the recess. Further, (a) to (f) are repeated in this order until an aspect ratio of a depth dimension from the opening of the mask to the bottom of the recess becomes 50 or more.

Abstract: An image processing apparatus comprises a first acquisition unit configured to acquire an image shot by continuous shooting while emitting a flash; a second acquisition unit configured to acquire light emission information of the flash in the continuous shooting; a detection unit configured to detect a light emission variation of the flash based on the light emission information; a setting unit configured to set a parameter of a virtual light source for correcting a variation of brightness of the image shot by the continuous shooting due to the light emission variation based on a result of detecting the light emission variation; and a correction unit configured to correct the image shot by the continuous shooting based on the set parameter of the virtual light source.

Abstract: In one embodiment that provides a technology in which process complication is suppressed and selective pattern film formation is performed, a method MT for processing a wafer W is provided, the wafer W includes a metal portion 61, an insulating portion 62, and a main surface 6, and a surface 61a of the metal portion 61 and a surface 62a of the insulating portion 62 are exposed on the main surface 6 side, the method MT includes: a step S1 of accommodating the wafer W in a processing chamber 4 of a plasma processing apparatus 10; a step S2 of starting supplying O2 gas into the processing chamber 4; and a step S3 of generating a plasma in the processing chamber 4 by the gas in the processing chamber 4 containing a SiF4 gas by supplying the SiF4 gas and plasma generation high-frequency power into the processing chamber 4, the plasma generated in the step S3 contains deposition species and etching species, and, in the plasma generated in the step S3, a proportion occupied by the etching species is greater than a p

Abstract: The present invention eliminates meaningless searching for an object, and increases the probability that an image the user likes can be obtained. An image capturing apparatus comprises an image capturing device configured to capture an object image, an object detection unit configured to detect an object from image data captured by the image capturing device, a state detection unit configured to detect information pertaining to a state in which the image capturing apparatus is being held, and a control unit configured to control a range in which the object detection unit searches for an object, on the basis of state information of the image capturing apparatus detected by the state detection unit.

Abstract: In one embodiment in which a technology which is capable of reducing voids that can occur when burying an insulating film into a trench while suppressing process complication, a method MT for processing a wafer W is provided. The wafer W has a groove 62 formed on the main surface 61 of the wafer W. The method MT includes: step S1 of accommodating the wafer W in a processing chamber 4 of a plasma processing apparatus 10; step S2 of starting supplying a first gas into the processing chamber 4; step S3 of starting supplying plasma generation high-frequency power into the processing chamber 4; and step S4 of starting intermittent supplying a second gas into the processing chamber 4 and starting supplying a third gas into the processing chamber 4 together, the first gas is a nitrogen-containing gas, the second gas is a gas that does not contain halogen, and the third gas is a gas that contains halogen.

Abstract: A cap (10) for a cultivation bottle for brown beech mushrooms includes a cylindrical member (20) that is fitted onto a wide-mouth part (54) of a cultivation bottle (50). The cylindrical member (20) includes a large-diameter cylindrical part (22) that covers and is fitted to an end edge of the wide-mouth part (54) and an outer surface in a vicinity of the end edge, a small-diameter cylindrical part (24) that has a first opening (21) with a smaller diameter than the large-diameter cylindrical part (22), and that is positioned toward a center of the large-diameter cylindrical part (22), and a connecting part (25) that connects an outer peripheral edge of the large-diameter cylindrical part (22) with the small-diameter cylindrical part (24). A height of an inner surface (15) of the small-diameter cylindrical part (24) is from 6 mm to 30 mm.

Abstract: An etching method for a target object. The target object includes a main surface, grooves formed in the main surface, and an etching target film covering the main surface and surfaces of the grooves. The method includes supplying a first gas into a processing chamber, and supplying a second gas and a high frequency power to generate a plasma of a gas including the second gas in the processing chamber. The first gas contains an oxidizing agent that does not include a hydrogen atom. The second gas contains a compound that includes one or more silicon atoms and one or more fluorine atoms and does not include a hydrogen atom. The etching target film is made of a material that is dry etched by using fluorine, and portions of the etching target film covering the surfaces of the grooves are selectively removed.

Abstract: In one embodiment that provides a technology in which process complication is suppressed and selective pattern film formation is performed, a method MT for processing a wafer W is provided, the wafer W includes a metal portion 61, an insulating portion 62, and a main surface 6, and a surface 61a of the metal portion 61 and a surface 62a of the insulating portion 62 are exposed on the main surface 6 side, the method MT includes: a step S1 of accommodating the wafer W in a processing chamber 4 of a plasma processing apparatus 10; a step S2 of starting supplying O2 gas into the processing chamber 4; and a step S3 of generating a plasma in the processing chamber 4 by the gas in the processing chamber 4 containing a SiF4 gas by supplying the SiF4 gas and plasma generation high-frequency power into the processing chamber 4, the plasma generated in the step S3 contains deposition species and etching species, and, in the plasma generated in the step S3, a proportion occupied by the etching species is greater than a p

Abstract: An image processing apparatus includes one or more processors that set a first image processing parameter for each of a plurality of first object areas included in an input image, perform image processing for the input image with a second image processing parameter set based on a plurality of first image processing parameters corresponding to the plurality of first object areas, and select a second object area in the input image. The one or more processors also obtain information on a positional relationship between an object contained in the second object area and an object contained in the first object area, and set the second image processing parameter based on the plurality of first image processing parameters and the information on the positional relationship. The image processing is performed based on the first image processing parameter and the information on the positional relationship, which are stored in a memory.

Abstract: A film forming method for a target object including a main surface and grooves formed in the main surface, includes a step of supplying of a first gas into the processing chamber, and a step of supplying a second gas and a high frequency power for plasma generation into the processing chamber to generate in the processing chamber a plasma of a gas including the second gas in the processing chamber. The first gas contains an oxidizing agent that does not include a hydrogen atom. The second gas contains a compound that includes one or more silicon atoms and one or more fluorine atoms and does not include a hydrogen atom. A film containing silicon and oxygen is selectively formed on the main surface of the target object except the grooves.

Abstract: The present variety of mushroom named ‘Marmo22go’ was cultivated by the gathering and repeated breeding of Bunashimeji mushrooms having dominant traits, which has good qualitative character and appearance, a thick white stem, a large mushroom size, and a resistance to high temperatures. This edible mushroom is exquisite in stability, reproducibility and uniformity when being produced.