Abstract: The present invention provides a pyrolysis tube for manufacturing olefin which tube can improve a yield of olefin in a pyrolysis reaction of a hydrocarbon raw material. The pyrolysis tube (1A) for manufacturing olefin includes a tubular base material (2) made of a heat resistant metal material and a dehydrogenating catalyst (4A) which is supported on an inner surface of the tubular base material (2).

Abstract: A printer includes a head unit and a platen unit. The head unit includes a print head. The platen unit includes a platen roller, a support, and a guide roller. The platen roller is rotatably supported on the support and configured to rotate to convey recording sheet. The guide roller includes a roller part, and the roller part is configured to rotate in contact with the recording sheet as the recording sheet is conveyed.

Abstract: A printer includes a head unit and a platen unit. The head unit includes a print head. The platen unit includes a platen roller, a support, and a guide roller. The platen roller is rotatably supported on the support and configured to rotate to convey recording sheet. The guide roller includes a roller part, and the roller part is configured to rotate in contact with the recording sheet as the recording sheet is conveyed.

Abstract: A storage system creates an HA configuration in a virtual storage composed of resources of first and second storage subsystems. A user of the virtual storage selects a replication destination volume (second logical volume) of a first logical volume of the first storage subsystem that the user wishes to duplicate from the second storage. At this time, only a logical volume not recognized from a host is selectable as the second logical volume. When data duplication between the first logical volume and the second logical volume is started, the second storage subsystem sets an identification number of the second logical volume to be the same as the identification number of the first logical volume. Thereafter, at the point of time when duplication is completed, the second storage changes the setting of the second logical volume so that the second logical volume can be recognized from the host.

Abstract: A polyimide resin composition which produces a heat-conductive adhesive film having specifically satisfactory electrical insulation properties and thermal conductivity, exhibiting adhesiveness at a low temperature of about 170° C. to 200° C., and exhibiting a glass transition temperature of higher than 200° C. after lamination of the film, is provided. Disclosed is a resin composition including an aromatic polyimide resin (A) containing phenolic hydroxyl groups; a filler (B); and an epoxy resin (C) having a melt viscosity of 0.04 Pa·s or less, wherein the ratio of the amounts in parts by mass of the polyimide resin (A), the filler (B), and the epoxy resin (C) satisfies the relationships: (A):(C)=99:1 to 1:99, and ((A)+(C)):(B)=80:20 to 5:95.

Abstract: This invention proposes a computing system and a backup method capable of improving the backup efficiency. In accordance with copy requests from the host, the data written to the first logical volume in the first storage system is copied to the second logical volume in the first storage system, the data copied to the second logical volume is used to form a journal and is transferred to the second storage system asynchronously, with the writing of data from the host to the first logical volume. In the second storage system, the data transferred from the first storage system is written to the third logical volume in the second storage system.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: This invention proposes a computing system and a backup method capable of improving the backup efficiency. In accordance with copy requests from the host, the data written to the first logical volume in the first storage system is copied to the second logical volume in the relevant first storage system, the data copied to the second logical volume is transferred to the second storage system asynchronously from writing of data from the host to the first logical volume and, in the second storage system, the data transferred from the first storage system is written to the third logical volume in the relevant second storage system.

Abstract: This invention provides a leather-like sheet excellent in hand softness and appearance durability, as a composite sheet consisting of a nonwoven fabric composed of ultrafine long fibers in which ultrafine fibers with a fiber fineness of 0.0001 to 0.5 dtex are entangled with each other, and a woven or knitted fabric, characterized in that at least some of the aforementioned ultrafine fibers pass through the woven or knitted fabric, that the appearance is grade 3 or higher while the abrasion loss is 10 mg or less in the evaluation of abrasion resistance, and that the sheet is substantially composed of only a fiber material of a non-elastic polymer.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: The invention provides 3,3?-diamino-5,5?-diphenyl-4,4?-biphenyldiol which is useful as a monomer for a high-performance polymer, particularly a polymer satisfying performances highly required in the semiconductor field such as polybenzoxazole, polyimide or the like and 3,3?-dinitro-5,5?-diphenyl-4,4?-biphenyldiol as a raw material thereof. Also, the invention provides a polybenzoxazole having a repeating unit represented by the following formula (1): (wherein R is a bivalent dicarboxylic acid residue).

Abstract: The present invention relates to a positive type photosensitive polyimide resin composition comprising a phenolic hydroxy group-containing soluble polyimide resin (A) formed from a tetrabasic acid dianhydride (a), an aminophenol compound having at least two amino groups and at least one phenolic hydroxy group in one molecule (b), and a diamino compound (c); a diazo-based positive type photosensitizer (B); and an epoxy resin (C). Using the positive type photosensitive polyimide resin composition of the present invention, a resin composition which allows easy patterning, satisfies various properties such as flame retardancy, heat resistance, mechanical properties and flexibility, and is capable of coping with high functionalization of various electronic devices, and a cured product thereof can be provided.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: Provided is a storage system having one or more logical devices mapped to a virtual device provided in a mapping destination storage system, and a storage controller for controlling the reading and writing of data from and to the logical devices. Upon receiving a reserve command from the mapping destination storage system, the storage controller restricts the access from an initiator other than the mapping destination storage system to a logical device to which access restriction is designated with the reserve command.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: A maintenance terminal for a disk array device is provided which can make setting of the disk array device and can easily confirm the setting contents. The maintenance terminal for the disk array device has three jumper connectors as setting terminals into which a conduction pin is inserted. The maintenance terminal also has eight light emitting diodes disposed in two rows and being capable of turning on and off in correspondence with a setting state of the disk array device in a network selectively changed through insertion of the conduction pin into the setting terminals.

Abstract: Provided is a storage system having one or more logical devices mapped to a virtual device provided in a mapping destination storage system, and a storage controller for controlling the reading and writing of data from and to the logical devices. Upon receiving a reserve command from the mapping destination storage system, the storage controller restricts the access from an initiator other than the mapping destination storage system to a logical device to which access restriction is designated with the reserve command.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.